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Additive for improving utilization ratio of silicon crystal line cutting mortar as well as preparation method and application method of addictive

A technology of wire cutting and additives, applied in the petroleum industry, lubricating compositions, etc., can solve the problems affecting the cutting and cleaning of silicon wafers, the increase of metal ion content, and the inability to use the third cutting, so as to facilitate cleaning and subsequent processing, Improve overall performance and address the effect of chip and pelletized powder redeposition

Inactive Publication Date: 2011-05-04
XIAN HUAJING ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the consumption of important components such as antioxidants, chelating agents and surfactants during the use of mortar, the performance of mortar has been seriously degraded, such as weakened ability to carry sand, increased metal ion content, and oxidation to produce pigments, etc.
These factors have seriously affected the cutting and cleaning of silicon wafers, resulting in a large number of waste wafers and increasing production costs.
Therefore, the mortar can only be used twice in production and cannot be used for the third cutting

Method used

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  • Additive for improving utilization ratio of silicon crystal line cutting mortar as well as preparation method and application method of addictive
  • Additive for improving utilization ratio of silicon crystal line cutting mortar as well as preparation method and application method of addictive

Examples

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Effect test

preparation example Construction

[0035]When preparing the additive for improving the utilization rate of silicon crystal wire cutting mortar, the preparation method includes the following steps:

[0036] Step 1, each component is weighed: According to the ratio of 50%~96.5% by weight: 1%~10%: 1%~20%: 0.5%~10%: 1%~10%, to polyethylene glycol , penetrant, ether alcohol surfactant, anti-extreme pressure chelating agent and builder are weighed respectively.

[0037] Step 2, mixing preparation: under the temperature condition of 35°C to 120°C, mix the polyethylene glycol, penetrant, ether alcohol surfactant, anti-extreme pressure chelating agent and builder weighed in step 1 and After fully stirring for 5 minutes to 10 minutes, the additive is prepared.

[0038] During the actual operation, when the polyethylene glycol, penetrant, ether alcohol surfactant, anti-extreme pressure chelating agent and builder weighed in step 1 are uniformly mixed under the temperature condition of 35℃~120℃ Firstly, the polyethylene ...

Embodiment 1

[0046] In this embodiment, when preparing the additive: weigh 9.65 kg of polyethylene glycol (PEG200) with a molecular weight of 200D (200 Daltons), the penetrating agent is 0.1 kg of polyoxyethylene secondary alkyl alcohol ether (JFC), ether The alcohol activator is 0.1kg of AEO-7 nonionic surfactant, the anti-extreme pressure chelating agent is 0.05kg of fatty alcohol sulfate monoethanolamine salt (ASEA), and the builder is 0.1kg of polyvinylpyrrolidone (PVP-k25); Then add the penetrating agent, ether alcohol active agent, anti-extreme pressure chelating agent and builder in the above amounts into polyethylene glycol (PEG200) at 35° C. and stir for 5 minutes until uniform to obtain 10 kg of additive.

[0047] When preparing the additive, first select polyethylene glycol with an appropriate molecular weight as a solvent. First of all, the wire cutting fluid itself is mainly composed of polyethylene glycol, and secondly, all other components have good solubility in polyethylen...

Embodiment 2

[0055] In this example, when preparing additives: first weigh 9.2 kg of polyethylene glycol (PEG) with a molecular weight of 400D, the penetrant is 0.1 kg of polyoxyethylene secondary alkyl alcohol ether (JFC), and the ether alcohol active agent is AEO -12 nonionic surfactant 0.5kg, anti-extreme pressure chelating agent is alcohol ether phosphate monoester ethanolamine salt 0.1kg, builder is polyvinylpyrrolidone (PVP-k25) 0.1kg; The ether alcohol active agent, the anti-extreme pressure chelating agent and the builder were sequentially added to polyethylene glycol (PEG) at 65° C., stirred for 5 minutes until uniform, and 10 kg of the additive was obtained.

[0056] In this embodiment, when the prepared additive is used, its usage method is different from that of Example 1 in that: in step II, when the mixed and prepared additive is added to the first wire-cutting mortar recovered in step I , the stirring time was 90 minutes, and all the other using methods and steps were the sa...

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Abstract

The invention discloses an additive for improving utilization ratio of silicon crystal line cutting mortar as well as a preparation method and application method of the addictive. The additive is composed of the following raw materials in percentage by weight: 50-96.5% of polyethylene glycol, 1-10% of penetrating agent, 1-20% of ether alcohol surfactant, 0.5-10% of extreme pressure resistant chelator and 1-10% of assistant detergent. The preparation method comprises the steps of weighing and mixing the raw materials. The application process comprises the following steps: 1. carrying out the first line cutting the mortar and recovering the mortar; 2. adding the additive: adding the additive to the recovered mortar after the first linear cutting based on the weight ratio of 1:100 plus / minus 10, and then evenly stirring; 3. carrying out the second line cutting; and 4. carrying out the third line cutting and recovering the mortar. The addictive is reasonable in design and has good use effect and practicable value, addictive preparation and use processes are simple, operation is convenient, and the defects of the existing silicon wafer cutting fluid such as more severe pollution, higher rejection rate, high production cost, low utilization ratio and the like can be overcome.

Description

technical field [0001] The invention belongs to the technical field of silicon crystal wire cutting, and in particular relates to an additive for improving the utilization rate of silicon crystal wire cutting mortar and a preparation and use method thereof. Background technique [0002] Silicon wafer is the basic material of semiconductor, solar energy and liquid crystal display industries. It is divided into monocrystalline silicon wafer and polycrystalline silicon wafer. The raw material is single crystal silicon or polycrystalline silicon, which is drawn into silicon ingot by ingot casting furnace, and then cut into silicon rod , and then use a wire cutting machine to process silicon wafers of various specifications. [0003] Polyethylene glycol type silicon crystal wire cutting fluid is a product made of polyethylene glycol as the main component compounded with antioxidants, chelating agents and surfactants. It is currently the leading silicon crystal cutting fluid in th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C10M157/06C10M157/08C10N40/00
Inventor 杨国农贺鹏杨易陈波
Owner XIAN HUAJING ELECTRONICS TECH
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