52 results about "Spin density" patented technology

A multicoil NMR data acquisition apparatus and processing method for performing three-dimensional magnetic resonance imaging in a static magnetic field without the application of controlled static magnetic field gradients. A preferred application relates specifically to the detection and localization of groundwater using the Earth's magnetic field. Multicoil arrays are used in both transmit and receive modes, and coherent data processing algorithms applied to the data to generate three-dimensional NMR spin density estimates. Disclosed are methods for acquiring NMR data using an array of at least two transmit and receive coils, and for processing such multicoil data to estimate the three-dimensional NMR spin density distributions.

A multicoil NMR data acquisition apparatus and processing method for performing three-dimensional magnetic resonance imaging in a static magnetic field without the application of controlled static magnetic field gradients. A preferred application relates specifically to the detection and localization of groundwater using the Earth's magnetic field. Multicoil arrays are used in both transmit and receive modes, and coherent data processing algorithms applied to the data to generate three-dimensional NMR spin density estimates. Disclosed are methods for acquiring NMR data using an array of at least two transmit and receive coils, and for processing such multicoil data to estimate the three-dimensional NMR spin density distributions.

The present invention pertains to an apparatus and method for conducting magnetic resonance measurements on fluids at high pressures and / or high temperatures. The apparatus can be used in conjunction with or as part of a downhole fluid sampling tool to perform NMR measurements on fluids withdrawn from petroleum reservoirs, or can also be used for laboratory measurements on live reservoir fluids. The apparatus can perform all of the measurements made by modern NMR logging tools, including multi-dimensional distribution functions of spin-spin (T2) and spin-lattice relaxation (T1) times and molecular diffusion coefficients. The spin densities of hydrogen and other NMR sensitive species can be computed from the distribution functions. The apparatus can also be used to predict the apparent conductivity of the fluids in the flowline from measurements of the quality factor (“Q”) of the NMR circuit. The apparent conductivity can be used to predict water cut or water salinity.

A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins / cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

An amorphous carbon film is provided with a density of 2.8-3.3 g / cm3. It would be preferable for the film to have: a spin density of 1×1018-1×1021 spins / cm3; a carbon concentration of at least 99.5 atomic percentage; a hydrogen concentration of no more than 0.5 atomic percentage; an inert gas element concentration of no more than 0.5 atomic percentage; and a Knoop hardness of 3000-7000. A mixed layer with a thickness of at least 0.5 nm and no more than 10 nm is formed from a parent material and at least material selected from: B, Al, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, and W. An amorphous carbon film is disposed on the mixed layer or a metallic intermediate layer formed on the mixed layer, thereby increasing adhesion. This amorphous carbon film is formed with solid carbon using sputtering, cathode-arc ion plating, or laser abrasion.

In a method and an apparatus for acquiring magnetic resonance data, a region of a subject is exposed to a spin echo magnetic resonance pulse sequence that includes a refocusing radio-frequency pulse flip angle evolution that causes magnetic resonance signals to be emitted from the region with a signal evolution following each excitation radio-frequency pulse. The signal evolution is sampled to extract two or more sets of sampled data therefrom respectively with different contrast weightings of tissues in the region. The multiple sets of sampled data are made available as respective outputs ina form allowing multiple different images of the region to be generated therefrom, respectively with said different contrast weightings. For example, a spin density-weighted image and a T2-weighted image, or a T2-weighted image and a heavily T2-weighted image, thus can be generated by sampling from the same variable-flip-angle echo train.

An apparatus for the crystalline, mass and selective syntheses of diamonds and carbon nanotubes (CNT) includes a chamber having at least one source of carbon and possibly a source of metal on a substrate surface (atoms, clusters and / or nanoparticles); at least one resistance heating element; at least one exciting and heating laser at least one IR source; at least one magnetic field generator; and at least one pressure device. In operation, carbon and metal atoms are supplied to the heated reaction chamber for contacting with substrate supported catalyst, a heating laser beam and an IR source, and then for contacting with an intense magnetic field sufficient amount of interaction between the excited carbon and metal atoms IR, laser, thermal energy and the magnetic field so as to excite, create, catalyze and stabilize electronic spin transitions and high electronic spin states of the excited carbon and metal atoms (for the production of high spin triplett, quartet and pentet carbon atoms) under chemical vapor deposition conditions, leading to the activated and more efficient rehybridization of these high spin carbon atoms for the massive chemical condensation of diamonds and / or CNTs. The specific photons of the laser may stimulate the nucleation of specific helical and diametric CNTs. An even greater massive chemical condensation is driven by selective, periodic and rapidly heating the metal catalyst via the IR-heating source for more efficient localization of energy for electronic, chemical and transport dynamics of high spin carbon atoms through the catalyst for lower ambient temperature selective condensation of CNT. The external magnetic field also provides conditions for creating, stabilizing, reacting and confining these high spin carbon and metal atoms. The continual supply, rehybridization and population inversion of carbon atoms overtime provides conditions conducive the massive and selective diamond and / or CNT productions. By operating the device to physically catalyze and stabilize electronic fixation of high spin states of carbon atoms by intense static arid / or dynamic magnetic fields, the chemical contamination is eliminated or may be modulated for controlled doping during the formation of diamonds and / or CNT, respectively. By operating the device to electronically fix carbon using the catalyst and magnetic fields, the electronic rehybridization rate is enhanced over the rates of currently used older arts of chemical catalytic fixation due to the reinforcing external magnetic field under CVD conditions relative to the intrinsic field of the catalyst and spin interactions with carbon atoms in the absence of the external magnetic field. The external field stabilizes high spin states of carbon and metal atoms, and enhances the intrinsic spin effects of the transition metal for chemical catalytic fixation. Moreover, an intense static external magnetic field stabilizes high spin carbon intermediates leading to stimulated diamond formation. On the other hand an intense dynamic external magnetic field intensified intrinsic spin density waves of the catalyst for enhanced CNT formation. This monumental discovery of magnetically activated rehybridization and stabilization of excited carbon contributes a watershed in the industrial massive production of diamonds and CNT when this magnetic discovery is coupled to new heating methods using IR photons. Furthermore, the stronger magnetic stabilization in this art relative to the weaker inherent fields in the catalyst of the older chemical catalytic art allow lower temperature generation of diamond and CNT. This new art provides diamond-CNT composite materials for novel diamond-CNT interfaces, new doping during the synthesis of diamond. Also in this new art, the magnetic densification of high spin carbon atoms allows more low pressure synthesis of diamond relative to older art. By switching the magnetic field on and off, this new art allows the selection of diamond or carbon nanotube growth.

Methods for providing practical magnetic resonance imaging systems that utilize non-homogeneous background fields, B0, as well as, possibly non-linear, gradient fields G1, G2 to make non-invasive measurements to determine, among other things, a spin density function. Two types of non-homogeneous background fields are considered: background fields B0 in which the function |B0| does not have a critical point within the field of view, and background fields B0 such that the function |B0| has a single critical point within the field of view. In the first case, an MR-imaging device may be constructed by using the permanent gradient in the background field, B0, as a slice select gradient, so long as particular criteria are met. In the second case, magnets may be constructed so that |B0| has an isolated non-zero local minimum. Using selective excitation, one can excite only the spins lying in a small neighborhood of this local minimum.

In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins / cm3, preferably higher than or equal to 1×1017 spins / cm3 and lower than 1×1018 spins / cm3.

A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins / cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

A highly reliable semiconductor device that includes a transistor including an oxide semiconductor is provided. In a semiconductor device which includes a bottom-gate transistor including an oxide semiconductor film, the spin density of the oxide semiconductor film is lower than or equal to 1×1018 spins / cm3, preferably lower than or equal to 1×1017 spins / cm3, further preferably lower than or equal to 1×1016 spins / cm3. The conductivity of the oxide semiconductor film is lower than or equal to 1×103 S / cm, preferably lower than or equal to 1×102 S / cm, further preferably lower than or equal to 1×101 S / cm.

Electric characteristics of a semiconductor device using an oxide semiconductor are improved. Further, a highly reliable semiconductor device in which a variation in electric characteristics with time or a variation in electric characteristics due to a gate BT stress test with light irradiation is small is manufactured. A transistor includes a gate electrode, an oxide semiconductor film overlapping with part of the gate electrode with a gate insulating film therebetween, and a pair of electrodes in contact with the oxide semiconductor film. The gate insulating film is an insulating film whose film density is higher than or equal to 2.26 g / cm3 and lower than or equal to 2.63 g / cm3 and whose spin density of a signal with a g value of 2.001 is 2×1015 spins / cm3 or less in electron spin resonance.

Provided is a silicon oxide used in a negative-electrode active material for a lithium-ion secondary battery. Said silicon oxide is characterized by a g-value of at least 2.0020 and no more than 2.0050, measured by an ESR spectrometer, and is further characterized in that A / B is at least 0.5 and C / B is no more than 2, where A, B, and C are the integrated intensities of peaks near 420 cm-1, 490 cm-1, and 520 cm-1 respectively, in a Raman spectrum measured by a Raman spectrometer. Using this silicon oxide as a negative-electrode active material allows a high-capacity lithium-ion secondary battery having excellent cycle characteristics and initial efficiency. The silicon oxide preferably has a spin density of at least 1 1017 spins / g and no more than 5 1019 spins / g. Also provided is a negative-electrode material for a lithium-ion secondary battery, said negative-electrode material containing at least 20% by mass of the silicon oxide as a negative-electrode active material.

Offered is a fluorescent substance consisting of Eu-activated β-sialon and capable of enhancing the brightness of a light emitting device such as a white LED using blue or ultraviolet light as a light source. The fluorescent substance has as its main constituent a β-sialon represented by the general formula Si6-zAlzOzN8-z and containing Eu, wherein the spin density is 2.0×1017 / g or less as measured by electron spin resonance spectroscopy corresponding to an absorption of g=2.00±0.02 at 25° C. In the above fluorescent substance, it is preferable that lattice constant a of the β-sialon be 0.7608-0.7620 nm, the lattice constant c be 0.2908-0.2920 nm, and the Eu content be 0.1-3 mass %.

An optical fiber having a small increase in loss at a wavelength of approximately 1400 nm involved in a deuterium treatment is provided, and an evaluation method to decide whether an optical fiber is that having such a loss increase, and a fabrication method of an optical fiber having a small increase in such a loss are also provided. An optical fiber according to the present invention comprises a core composed of a silica glass doped with at least germanium and a cladding composed of a silica glass surrounding it. The optical fiber is exposed to an atmosphere containing hydrogen or deuterium to diffuse hydrogen molecules or deuterium molecules in the optical fiber, and after that, the outer periphery of the glass region of the optical fiber is etched to an outer diameter of 50 μm, and then the electron spin density of PORs is 1×1013 spins / g or less when the glass region is measured by the electron-spin resonance method.

Provided are a light-emitting element capable of reducing power consumption by increasing its light extraction efficiency and a light-emitting device using the light-emitting element. A light-emitting element includes a composite material, which contains an organic compound having a high hole-transport property and an electron acceptor and in which the spin density measured by an electron spin resonance (ESR) method is less than or equal to 1×1019 spins / cm3, the spin density is less than or equal to 3×1019 spins / cm3 when the molar ratio of the electron acceptor to the organic compound is greater than or equal to 1, or the spin density is less than or equal to 5×1019 spins / cm3 when the molar ratio is greater than or equal to 2.