This application discloses a
signal readout method and apparatus based on a
Hall effect device array with lateral resistance, relating to the field of circuit technology. Each
Hall effect device is provided with two power supply terminals and at least one Hall
signal terminal. The method includes: changing the
flip angle of the free
magnetic layer of at least one
Hall effect device using spin orbital moment, thereby setting the Hall resistance value of the corresponding Hall effect device to a desired target value; connecting the Hall
signal terminals of several Hall effect devices in series to read the summed
voltage; and connecting the Hall signal terminals of several Hall effect devices in parallel to read the summed current. The Hall effect device of this application can achieve current-induced out-of-plane
magnetization reversal under shunt conditions; the
flip angle can change the resistance value, thereby reducing the need for Hall effect devices with different resistance values; this application realizes that the Hall signal terminals of multiple Hall effect devices are connected in series to achieve
voltage summation, or connected in parallel to achieve current summation.