7 results about "Resonance line" patented technology

This invention relates to the field of ultrasensitive magnetic measurement technology based on quantum sensing, and in particular to a single-beam zero-magnetic-field dual-axis vector magnetometer and its usage and applications. This invention employs a single probe laser beam to simultaneously perform pumping and detection functions, and innovatively combines the tensor-vector polar moment conversion (AOC) effect, magnetic field modulation, and large-amplitude modulation of the optical frequency. This significantly reduces the resonant linewidth of the magnetometer while suppressing photon shot noise and detector electronic noise, and achieves dual-axis magnetic field measurement in a zero-magnetic environment. In laboratory desktop experiments, a sensitivity of level 10 can be achieved.

The application belongs to the field of magnetic materials, and particularly relates to a high-power garnet ferrite and a preparation method thereof. 2+ -Ge 4+ or Co 2+ -Si 4+ ion joint substitution, through reasonable design of Co 2+ ion and Mn 3+ ion doping amount, combined with appropriate Dy 3+ doping, a garnet ferrite capable of simultaneously having high remanence ratio, low resonance line width, high spin wave line width and high Curie temperature is obtained. The application aims at the shortcomings that garnet ferrite is difficult to simultaneously have low resonance line width, high spin wave line width and high Curie temperature, and proposes a method of Co 2+ ion and Dy 3+ ion joint substitution, so that the garnet ferrite can simultaneously have low resonance line width, high spin wave line width and high Curie temperature.

The invention provides a method for accurately measuring plasmon nanocavity-single molecule exciton strong coupling energy level Rabi splitting. The method is used for solving the problem that spectrum splitting measured through experiments is not equivalent to coupling system energy level Rabi splitting. The preparation method comprises the following steps: embedding a single dye molecule into a single CB [7] molecule to prepare a CB [7] at single dye molecule; coupling the CB [7] at single dye molecule with two gold nanospheres to obtain a gold nanosphere dimer (Au ND) / CB [7] at single dye molecule coupling system; the coupling system is transferred to a Si / SiO2 photonic substrate, and the photon mode frequency and line width are regulated and controlled by regulating the thickness of a SiO2 layer, so that the gold nanosphere dimer plasmon resonance line width is effectively regulated and controlled, and the gold nanosphere dimer plasmon resonance line width is matched with the exciton line width. According to the invention, the relative error between the spectral splitting obtained based on the spectral measurement of the single-molecule strong coupling system and the energy level Rabi splitting of the coupling system is reduced to-1.3% from the original-27.3%, so that the measurement error of the energy level Rabi splitting of the single-molecule strong coupling system is greatly reduced, and accurate measurement is achieved.

The invention discloses a high-sensitivity reconfigurable sensor and a tuning method, the sensor is of a laminated structure, the uppermost layer is a sensor body, the middle layer is a dielectric substrate, and the lowermost layer is of a microstrip line structure; the sensor body is formed by combining an artificial local surface plasmon resonance structure and a circular coupling structure, and a tiny gap is formed between the artificial local surface plasmon resonance structure and the circular coupling structure. According to the sensor, the local field enhancement characteristic of the artificial surface plasmon is utilized, a sharp Fano resonance line shape is excited through multi-mode interference, and the sensing sensitivity is greatly improved; meanwhile, the PIN diode is introduced, dynamic reconstruction of a surface plasmon mode is achieved by changing the bias voltage of the PIN diode, and the sensor has the advantages of being high in sensitivity, high in resonant frequency and adjustable in sensing frequency.

This invention relates to the field of ferrite materials technology, and discloses a LiZnFe ferrite material with high saturation magnetization Ms and low ferromagnetic resonance linewidth. It utilizes a combination of main and auxiliary materials. The main materials are Li₂CO₃, Fe₂O₃, ZnO, MnCO₃, and TiO₂, with a molar ratio of 13-14:75-77:6-7.5:1.5-2.8:0.55-0.95. The auxiliary materials are CaCO₃ and Bi₂O₃, added at 0.5-2 wt% and 0.3-1.8 wt% of the total main materials, respectively. This invention solves the problems of insufficient magnetization Ms and low resonance linewidth in existing technologies by addressing both the formulation and preparation process, ensuring the material performance meets the requirements. The Ms can reach 5000 Gs, and the resonance linewidth can be within 200 Oe.

The invention discloses a high-performance spinel gyromagnetic ferrite material and a preparation method thereof, and belongs to the technical field of magnetic composite materials. The preparation method comprises the following steps: mixing NiO, SnO2, Ho2O3, Co2O3, CuO, ZnO, MnCO3, Al2O3 and Fe2O3 according to a certain proportion by adopting a solid-phase reaction method, and carrying out ball milling, drying, pre-sintering, secondary ball milling, granulation, sieving and blank making to obtain the ferrite material. The material has high spin wave line width, low resonance line width and good mechanical strength. When the broadband microwave circulator is applied, the requirement problem of a broadband high-power miniaturized circulator can be solved, meanwhile, the used raw materials are low in price, and the broadband microwave circulator has very high economic value.

The application discloses a kind of full dielectric terahertz super surface based on inverted D-shaped column structure and preparation method, belong to terahertz super surface technical field.The preparation method provided by the present application uses silica layer as protective layer, which can effectively prevent silicon wafer from being oxidized or corroded during subsequent processing;By spin coating photoresist layer, baking, placing mask, exposure and development, etc., the pattern of inverted D-shaped column structure is formed on the silicon wafer, and the silicon wafer is etched by using etching reaction gas, forming inverted D-shaped column structure on the silicon wafer, breaking the in-plane rotational symmetry of full dielectric terahertz super surface, obtaining quasi-continuous domain bound state resonance with higher Q value and extremely narrow resonance line width, and by controlling the size of structure asymmetry, the resonance peak frequency and Q value can be actively and flexibly tuned;The use of plasma gas effectively removes the photoresist layer, ensuring the cleanliness and integrity of the full dielectric terahertz super surface.