12 results about "Resonance line" patented technology

This invention relates to the field of ultrasensitive magnetic measurement technology based on quantum sensing, and in particular to a single-beam zero-magnetic-field dual-axis vector magnetometer and its usage and applications. This invention employs a single probe laser beam to simultaneously perform pumping and detection functions, and innovatively combines the tensor-vector polar moment conversion (AOC) effect, magnetic field modulation, and large-amplitude modulation of the optical frequency. This significantly reduces the resonant linewidth of the magnetometer while suppressing photon shot noise and detector electronic noise, and achieves dual-axis magnetic field measurement in a zero-magnetic environment. In laboratory desktop experiments, a sensitivity of level 10 can be achieved.

The application belongs to the field of magnetic materials, and particularly relates to a high-power garnet ferrite and a preparation method thereof. 2+ -Ge 4+ or Co 2+ -Si 4+ ion joint substitution, through reasonable design of Co 2+ ion and Mn 3+ ion doping amount, combined with appropriate Dy 3+ doping, a garnet ferrite capable of simultaneously having high remanence ratio, low resonance line width, high spin wave line width and high Curie temperature is obtained. The application aims at the shortcomings that garnet ferrite is difficult to simultaneously have low resonance line width, high spin wave line width and high Curie temperature, and proposes a method of Co 2+ ion and Dy 3+ ion joint substitution, so that the garnet ferrite can simultaneously have low resonance line width, high spin wave line width and high Curie temperature.

The invention provides a method for accurately measuring plasmon nanocavity-single molecule exciton strong coupling energy level Rabi splitting. The method is used for solving the problem that spectrum splitting measured through experiments is not equivalent to coupling system energy level Rabi splitting. The preparation method comprises the following steps: embedding a single dye molecule into a single CB [7] molecule to prepare a CB [7] at single dye molecule; coupling the CB [7] at single dye molecule with two gold nanospheres to obtain a gold nanosphere dimer (Au ND) / CB [7] at single dye molecule coupling system; the coupling system is transferred to a Si / SiO2 photonic substrate, and the photon mode frequency and line width are regulated and controlled by regulating the thickness of a SiO2 layer, so that the gold nanosphere dimer plasmon resonance line width is effectively regulated and controlled, and the gold nanosphere dimer plasmon resonance line width is matched with the exciton line width. According to the invention, the relative error between the spectral splitting obtained based on the spectral measurement of the single-molecule strong coupling system and the energy level Rabi splitting of the coupling system is reduced to-1.3% from the original-27.3%, so that the measurement error of the energy level Rabi splitting of the single-molecule strong coupling system is greatly reduced, and accurate measurement is achieved.

The invention discloses a power assembly hydraulic suspension jitter improvement method, device and equipment and a storage medium. The method comprises the steps that power assembly inertial parameters of a power assembly of a current vehicle are obtained; obtaining a hydraulic suspension load of the hydraulic suspension of the current vehicle according to the power assembly inertial parameter; according to the method, the resonance line of the power assembly is obtained, the dynamic stiffness curve of the hydraulic suspension load attached to the resonance line is obtained, and the target hydraulic parameters of the hydraulic suspension are set according to the dynamic stiffness curve, so that the power assembly can be used as a broadband vibration absorber for vehicle driving shaking, the vehicle driving shaking is effectively reduced, and the reliability of the vehicle driving shaking is improved. The later debugging work is avoided, the workload of low-frequency jitter improvement is reduced, and the jitter improvement speed and efficiency of the power assembly hydraulic mount are improved.

The invention discloses a high-sensitivity reconfigurable sensor and a tuning method, the sensor is of a laminated structure, the uppermost layer is a sensor body, the middle layer is a dielectric substrate, and the lowermost layer is of a microstrip line structure; the sensor body is formed by combining an artificial local surface plasmon resonance structure and a circular coupling structure, and a tiny gap is formed between the artificial local surface plasmon resonance structure and the circular coupling structure. According to the sensor, the local field enhancement characteristic of the artificial surface plasmon is utilized, a sharp Fano resonance line shape is excited through multi-mode interference, and the sensing sensitivity is greatly improved; meanwhile, the PIN diode is introduced, dynamic reconstruction of a surface plasmon mode is achieved by changing the bias voltage of the PIN diode, and the sensor has the advantages of being high in sensitivity, high in resonant frequency and adjustable in sensing frequency.

This invention relates to the field of ferrite materials technology, and discloses a LiZnFe ferrite material with high saturation magnetization Ms and low ferromagnetic resonance linewidth. It utilizes a combination of main and auxiliary materials. The main materials are Li₂CO₃, Fe₂O₃, ZnO, MnCO₃, and TiO₂, with a molar ratio of 13-14:75-77:6-7.5:1.5-2.8:0.55-0.95. The auxiliary materials are CaCO₃ and Bi₂O₃, added at 0.5-2 wt% and 0.3-1.8 wt% of the total main materials, respectively. This invention solves the problems of insufficient magnetization Ms and low resonance linewidth in existing technologies by addressing both the formulation and preparation process, ensuring the material performance meets the requirements. The Ms can reach 5000 Gs, and the resonance linewidth can be within 200 Oe.

The invention discloses a high-performance spinel gyromagnetic ferrite material and a preparation method thereof, and belongs to the technical field of magnetic composite materials. The preparation method comprises the following steps: mixing NiO, SnO2, Ho2O3, Co2O3, CuO, ZnO, MnCO3, Al2O3 and Fe2O3 according to a certain proportion by adopting a solid-phase reaction method, and carrying out ball milling, drying, pre-sintering, secondary ball milling, granulation, sieving and blank making to obtain the ferrite material. The material has high spin wave line width, low resonance line width and good mechanical strength. When the broadband microwave circulator is applied, the requirement problem of a broadband high-power miniaturized circulator can be solved, meanwhile, the used raw materials are low in price, and the broadband microwave circulator has very high economic value.

The invention discloses an all-dielectric terahertz metasurface based on an inverted D-shaped column structure and a preparation method, and belongs to the technical field of terahertz metasurfaces. According to the preparation method provided by the invention, the silicon dioxide layer is used as the protective layer, so that the silicon wafer can be effectively prevented from being oxidized or corroded in the subsequent processing process; through the steps of spin coating of a photoresist layer, baking, placement of a mask plate, exposure, development and the like, a pattern of an inverted D-shaped column structure is formed on a silicon wafer, deep reactive ion etching is performed on the silicon wafer by utilizing etching reaction gas, the inverted D-shaped column structure is formed on the silicon wafer, in-plane rotational symmetry of the all-dielectric terahertz metasurface is broken, and the dielectric performance of the all-dielectric terahertz metasurface is improved. Quasi-continuous domain bound state resonance with a higher Q value and an extremely narrow resonance line width is obtained, and active and flexible tuning of formant frequency and the Q value can be realized by controlling the asymmetry of the structure. And the photoresist layer is effectively removed by using the plasma gas, so that the cleanliness and the integrity of the all-dielectric terahertz metasurface are ensured.

The high-power and low-loss rotating ferrite of the present invention is formulated according to Y 3‑x‑p‑w Ca x Gd p Dy w Ge x In y Mn z Co q Fe 4.97‑x‑y‑z‑q O 12 proportion; wherein, 0.05 ≤ x ≤ 0.3, 0.01 ≤ y ≤ 0.1, 0.001 ≤ z ≤ 0.1, 0.05 ≤ p ≤ 0.7, 0.002 ≤ w ≤ 0.01, 0.002 ≤ q ≤ 0.005. The present invention uses the Y, Gd series as the basic formula, improves the rectangularity of the hysteresis loop through the micro-doping of Mn; realizes high power by the combined substitution of Gd and Dy to increase the self-selection wave linewidth ΔHk; reduces the resonance linewidth ΔH to achieve small loss through the small substitution of In and Mn; regulates the saturation magnetization intensity 4πMs through the combined substitution of Gd, Ca and Ge; to suit the selection of different frequency devices. It has both a high self-selection wave linewidth ΔHk, a high remanence ratio Rs and low electromagnetic loss.

A frequency conversion system includes a bus waveguide, a first pump laser coupled to the bus waveguide and characterized by a first frequency, a second pump laser coupled to the bus waveguide and characterized by a second frequency, an input light combining device coupled to the bus waveguide and configured to combine light from the first pump laser and the second pump laser to produce a combined light, and a plurality of optical resonators coupled to the bus waveguide. Each optical resonator of the plurality of optical resonators has a respective resonance line width, wherein for each optical resonators of the plurality the respective resonance line width overlaps with a resonance line width of at least one adjacent optical resonator of the plurality of optical resonators, and wherein each optical resonator of the plurality is configured to generate output light at a converted frequency via frequency mixing.

The present invention relates to a method for improving the efficiency of a large emittance slow extraction beam, comprising: setting an initial working point Q of a synchrotron slow extraction platform; 1 and the total strength S of the hexapole iron n , so that the area of ​​the stable region is larger than the maximum emittance of the circulating beam; adjust the initial working point Q 1 To Q 2 Closer to the resonance line Q res , that is, reduce Δq and maintain the total strength S of the hexapole iron n No change, or keep Q 1 Unchanged, increasing the total strength S of the hexapole iron n ; Adjust the initial working point Q 1 To Q 2 Closer to the resonance line Q res Or increase the total strength S of the hexapole iron n , so that the area of ​​the stable zone gradually decreases, and the extraction pitch and angular divergence gradually increase; modulate the amplitude and angle of the extraction boundary track, select a suitable pitch, reduce the angular divergence, and thus obtain a high extraction efficiency after the large emittance slow extraction beam is contracted. The present invention dynamically shrinks the area of ​​the triangular stable zone and modulates the angle of the entrance at the electrostatic deflection plate (or modulates the angle and amplitude in parallel) to obtain a slow extraction beam with high extraction efficiency.

The application discloses a kind of full dielectric terahertz super surface based on inverted D-shaped column structure and preparation method, belong to terahertz super surface technical field.The preparation method provided by the present application uses silica layer as protective layer, which can effectively prevent silicon wafer from being oxidized or corroded during subsequent processing;By spin coating photoresist layer, baking, placing mask, exposure and development, etc., the pattern of inverted D-shaped column structure is formed on the silicon wafer, and the silicon wafer is etched by using etching reaction gas, forming inverted D-shaped column structure on the silicon wafer, breaking the in-plane rotational symmetry of full dielectric terahertz super surface, obtaining quasi-continuous domain bound state resonance with higher Q value and extremely narrow resonance line width, and by controlling the size of structure asymmetry, the resonance peak frequency and Q value can be actively and flexibly tuned;The use of plasma gas effectively removes the photoresist layer, ensuring the cleanliness and integrity of the full dielectric terahertz super surface.