Small-line-width high-Curie-temperature microwave ferrite material and preparation method thereof

Abstract

The invention discloses a small-line-width high-Curie-temperature microwave ferrite material of which the main phase is a garnet structure. The microwave ferrite material is characterized in that the chemical formula is Y[3-x]CaxSnxMnyFe[5-x-y-z]O12, wherein 0.05<=x<=0.2, 0.02<=y<=0.06, 0.14<=z<=0.24, and z is a technical amount of iron deficiency. The preparation method of the small-line-width high-Curie-temperature microwave ferrite material comprises the following steps: (1) after designing the formula, carrying out stoichiometric calculation and weighing raw materials; (2) carrying out primary wet-process ball milling; (3) presintering; (4) secondary wet-process ball milling; (5) drying and granulating; (6) carrying out pressure molding; and (7) sintering. The material has the advantages of smaller resonance line width DeltaH, higher Curie temperature Tc, high saturation magnetization temperature stability, compact structure and low cost; and the device prepared from the material has the advantages of low loss and stable performance, and is suitable for application and popularization.

Description

technical field [0001] The invention relates to a microwave ferrite material with small line width and high Curie temperature and a preparation method thereof, belonging to the fields of microwave communication and magnetic materials. Background technique [0002] Garnet-type microwave ferrite material is a new type of microwave material developed in the 1960s. Yttrium iron garnet ferrite is the earliest developed garnet-type gyromagnetic material. In yttrium iron garnet ferrite On the basis of the solid body, through ion doping, process improvement and other means, the composition and structure of the material can be adjusted to obtain garnet-type microwave ferrite materials with different properties. At present, the garnet ferrite materials with practical value in the field of microwave communication are almost all improved on the basis of yttrium iron garnet ferrite. This kind of material has the advantages of low dielectric loss, low anisotropy field, high density, high...

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Problems solved by technology

The chemical formula of the garnet ferrite disclosed in the patent CN 101591168A is: Y 3-2x Ca 2x V x In y mn z Fe 5-x-y-z o 12 or Y 3-x Ca x Ge x In y mn z Fe 5-x-y-z o 12 , the tested ferromagnetic resonance linewidth ΔH is 1.2KA / m, and the insertion loss is 0.25dB. Although the linewidth is reduced, the introduction of In ions reduces the Curie temperature T of the device. c , the Curie temperature of the device is too low, which will cause the saturation magnetization M of the device s Poor temperature stability affects the normal operation of the device

Although Gd ions are introduced into the device to obtain better saturation magnetization M s Temperature stability, but the ferromagnetic resonance linewidth ΔH increases significantly, if In ions are introduced into the device, the saturation magnetization M cannot be maintained s Temperature stability. If Gd ions and In ions are introduced at the same time, the effect of In ions on reducing ΔH and the effect of Gd ions on increasing ΔH will cancel each other out. Generally, garnet ferrite materials with lower ΔH cannot be obtained. In addition, In 2 o 3 The price of raw materials is relatively expensive, which is not conducive to large-scale promotion

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