A kind of preparation method of mems atomic vapor chamber and atomic vapor chamber
A vapor cavity and atomic technology, applied in the field of micro-electromechanical systems, to achieve the effect of reducing light loss, improving light transmittance, and being easy to implement
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0103] A specific implementation steps of a MEMS atomic vapor single-chamber preparation method:
[0104] (1) Sample Selection
[0105] Select Pyrex glass-silicon-Pyrex glass material matching, wherein Pyrex glass sheet 18 and Pyrex glass sheet 20 are double-sided polished, and silicon wafer 1 is an N-type silicon wafer with a thickness of 500 μm polished on both sides.
[0106] (2) Sample cleaning
[0107] Cleaning with sulfuric acid-hydrogen peroxide solution and hydrofluoric acid immersion method: first soak silicon wafer 1, Pyrex glass wafer 18 and Pyrex glass wafer 20 in sulfuric acid-hydrogen peroxide solution with a temperature of 120°C and a ratio of 10:1 for 10 minutes; then At room temperature, soak with hydrofluoric acid aqueous solution at a ratio of 1:100 for 1 minute; finally, wash with deionized water and dehydrate with absolute ethanol.
[0108] (3) Make a single-chamber space, such as figure 1 , figure 2 , image 3 shown;
[0109] The silicon wafer 1 w...
Embodiment 2
[0131] A specific implementation steps of a MEMS atomic vapor dual-chamber preparation method:
[0132] (1) Sample Selection
[0133] Pyrex glass-silicon-Pyrex glass material matching is selected, wherein Pyrex glass sheet 19 and Pyrex glass sheet 21 are double-sided polished, and silicon wafer 2 is an N-type silicon wafer with a thickness of 500 μm polished on both sides.
[0134] (2) Sample cleaning
[0135] Cleaning with sulfuric acid-hydrogen peroxide solution and hydrofluoric acid immersion method: first soak the silicon chip 2, the Pyrex glass chip 19 and the Pyrex glass chip 21 in a sulfuric acid-hydrogen peroxide solution with a temperature of 120°C and a ratio of 10:1 for 10 minutes; then At room temperature, soak with hydrofluoric acid aqueous solution at a ratio of 1:100 for 1 minute; finally, wash with deionized water and dehydrate with absolute ethanol.
[0136] (3) Make a double-chamber space, such as Figure 8 , Figure 9 , Figure 10 , Figure 12 , Figur...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com