Method for growing silicon carbide mono-crystals through multi-crucible physical vapor transport technology, and device thereof

Abstract

The invention discloses a method for growing silicon carbide mono-crystals through a multi-crucible physical vapor transport technology, and a device thereof. The device is characterized in that the multi-crucible growth technology is adopted in the growth process of the silicon carbide mono-crystals, two graphite crucibles arrayed in a top-bottom manner are simultaneously placed in the graphite heating unit of a hearth, the upper crucible is suspended on a lifting rod, the lower crucible is inversely placed on a falling rod, two seed crystals are positioned at two ends of the graphite heating unit in a low temperature zone, a raw material is positioned in the middle of the graphite heating unit in a high temperature zone, and the temperatures of the upper crucible and the lower crucible are determined by a master temperature controller and a secondary temperature controller. The silicon carbide crystals growing though adopting the method have the advantages of high production efficiency and low production cost, so the method is suitable for the large-scale growth of the mono-crystals.

Description

technical field [0001] The present invention relates to a method and device for growing silicon carbide crystals, in particular to a method and device for growing silicon carbide single crystals using multi-crucible physical vapor transport technology. The silicon carbide single crystals grown by this method have high production efficiency and low production cost. Suitable for large-scale single crystal growth. Background technique [0002] At present, the rapid development of the semiconductor industry has once again stimulated the innovation of modern science and technology. As a third-generation wide-bandgap semiconductor material, silicon carbide is superior to commonly used substrate materials in terms of thermal, electrical, and corrosion resistance, and can be widely used in the manufacture of semiconductor devices such as semiconductor lighting, microelectronics, and power electronics. In the past few decades, a variety of high-performance silicon carbide-based semi...

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Problems solved by technology

For example, the Chinese Invention Patent No. 200910238110.0 applied for on 2009.11.18 discloses a technology for growing silicon carbide crystals by physical vapor transport. This technology places silicon carbide seed crystals on the top of the crucible and silicon carbide raw materials on the bottom of the crucible. However, one Only one silicon carbide single crystal can be grown in the single crystal furnace

The Chinese invention patent No. 201010152392.5 applied on April 20, 2010 has made further improvements on the basis of the above. This technology places silicon carbide seed crystals at the bottom of the crucible, and silicon carbide raw materials at the top of the crucible. However, a single crystal furnace using this technology can only grow a silicon carbide crystal

However, for the growth of silicon carbide single crystal, due to the high growth temperature, close to 2300°C, the top view structure of the furnace is circular instead of rectangular. Although it can be achieved by using the left and right multi-crucible growth technology described in the above patent It is possible to grow multiple silicon carbide crystals in one furnace at the same time, but since several crucibles are placed at the bottom of the furnace at the same time, a larger size furnace is bound to be required, so that the energy consumption per unit time of the furnace is greatly increased, which is different from the traditional increase in crystal size Compared with the method, the advantage of this method is not obvious

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