Method and device for growing silicon carbide single crystal by multi-crucible physical vapor transport technology

Abstract

A method and device for growing a silicon carbide single crystal by a multi-crucible physical vapor transport method, characterized in that: during the growth process of a silicon carbide single crystal, a multi-crucible growth method is adopted, and two graphite crucibles arranged up and down are placed in the furnace at the same time In the graphite heating element inside, the upper crucible is suspended on the lifting rod, and the lower crucible is placed upside down on the falling rod. The two seed crystals are located at both ends of the graphite heating element, in the low temperature area, and the raw materials are located in the middle of the graphite heating element, in the high temperature area. The temperature of the lower crucible is determined by the main control temperature and the secondary temperature control device. The silicon carbide crystal grown by the method has high production efficiency and low production cost, and is suitable for large-scale single crystal growth.

Description

technical field [0001] The present invention relates to a method and device for growing silicon carbide crystals, in particular to a method and device for growing silicon carbide single crystals using multi-crucible physical vapor transport technology. The silicon carbide single crystals grown by this method have high production efficiency and low production cost. Suitable for large-scale single crystal growth. Background technique [0002] At present, the rapid development of the semiconductor industry has once again stimulated the innovation of modern science and technology. As a third-generation wide-bandgap semiconductor material, silicon carbide is superior to commonly used substrate materials in terms of thermal, electrical, and corrosion resistance, and can be widely used in the manufacture of semiconductor devices such as semiconductor lighting, microelectronics, and power electronics. In the past few decades, a variety of high-performance silicon carbide-based semi...

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Problems solved by technology

For example, the Chinese Invention Patent No. 200910238110.0 applied for on 2009.11.18 discloses a technology for growing silicon carbide crystals by physical vapor transport. This technology places silicon carbide seed crystals on the top of the crucible and silicon carbide raw materials on the bottom of the crucible. However, one Only one silicon carbide single crystal can be grown in the single crystal furnace

The Chinese invention patent No. 201010152392.5 applied on April 20, 2010 has made further improvements on the basis of the above. This technology places silicon carbide seed crystals at the bottom of the crucible, and silicon carbide raw materials at the top of the crucible. However, a single crystal furnace using this technology can only grow a silicon carbide crystal

However, for the growth of silicon carbide single crystal, due to the high growth temperature, close to 2300°C, the top view structure of the furnace is circular instead of rectangular. Although it can be achieved by using the left and right multi-crucible growth technology described in the above patent It is possible to grow multiple silicon carbide crystals in one furnace at the same time, but since several crucibles are placed at the bottom of the furnace at the same time, a larger size furnace is bound to be required, so that the energy consumption per unit time of the furnace is greatly increased, which is different from the traditional increase in crystal size Compared with the method, the advantage of this method is not obvious

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