Ingot furnace thermal field structure based on multi-heater and operation method

Abstract

The invention relates to the field of manufacturing technology of polycrystalline silicon ingot furnaces, aiming to provide an ingot furnace thermal field structure based on multi-heater and an operation method. The ingot furnace thermal field structure comprises a crucible arranged in a furnace chamber; a thermal field of the crucible comprises a top heater, a side heater, a heat exchanger table located on the bottom of the crucible and a bottom heater located on the bottom of the heat exchange table; an infrared temperature measuring instrument coordinates with the top heater and the side heater; the infrared temperature measuring instrument or a thermoelectric couple coordinates with the bottom heater. An operation process of the operation method comprises a heating stage, a melting stage, a crystal growing stage, an annealing stage and a cooling stage. The ingot furnace thermal field structure and the operation method can effectively monitor the temperature of various portions of the thermal field, regulate power output of various heaters, establish more reasonable temperature gradient, adapt to high-feeding capacity and large-size ingot trend, enable crystal nucleus to form more uniformly during early time of crystal growth, enlarge crystals, reduce crystal boundary, improve crystal direction, reduce energy consumption and finally improve quality of crystal ingots.

Description

technical field [0001] The invention relates to the technical field of manufacturing polysilicon ingot furnaces, in particular to a polysilicon ingot furnace thermal field structure and operation method based on multiple heaters, which is suitable for manufacturing polysilicon ingots with large feeding capacity, large size and high quality. Background technique [0002] Polysilicon ingot furnace is a professional silicon remelting equipment used to produce qualified solar grade polysilicon ingots. Ingot production is the process of firstly loading polysilicon raw materials that meet the requirements into the furnace, and then performing various steps such as heating, melting, crystal growth, annealing, and cooling according to the process settings, and finally taking out the polysilicon ingot. [0003] However, there are a large number of grain boundaries inside the cast polysilicon, and the clean grain boundaries are non-electrically active, which has no or only slight infl...

AI Technical Summary

Problems solved by technology

This working method determines that the controllability of the temperature in the furnace body is poor, and a reasonable temperature gradient cannot be constructed. It has insurmountable defects when faced with the situation of large-scale feeding and large-size ingots.

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