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Preparation method of rare earth nickel-based oxide polycrystalline film material

A thin film material, oxide technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of high pressure process complexity, expensive oxide single crystal substrate, high cost, etc. Excellent thermotropic and hydrogen-induced properties, simple and efficient preparation

Inactive Publication Date: 2017-03-08
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Weighing the above two methods: Although ReNiO can be obtained by high-pressure synthesis method 3 Polycrystalline thin films, but the high-pressure process involved has certain complexity and danger; and the use of single crystal substrate template effect to prepare rare earth nickel-based perovskite oxide quasi-single crystal thin films requires the use of expensive oxide single crystal substrates , the cost remains high

Method used

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  • Preparation method of rare earth nickel-based oxide polycrystalline film material
  • Preparation method of rare earth nickel-based oxide polycrystalline film material
  • Preparation method of rare earth nickel-based oxide polycrystalline film material

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Embodiment 1

[0034] A 30nm strontium rubidium oxide buffer layer was grown on a 1 cm by 1 cm square silicon substrate by pulsed laser deposition (deposition pressure was 10 Pascal oxygen atmosphere, substrate temperature was 500 degrees Celsius); and then a 100 nm layer was grown by pulsed laser deposition Samarium nickel oxide (SmNiO 3 ) polycrystalline film (deposition pressure is 10 Pascal oxygen atmosphere, substrate temperature is 500 degrees Celsius). The prepared samarium nickel oxide film has a pure phase structure (such as figure 1 shown), its surface is flat, and a sudden change in the resistivity of the material is observed at a temperature of 400-410 Kelvin (such as figure 2 shown), consistent with the literature [Nat.Commun., 2014,5,4860], which proves that the material has temperature-induced phase transition properties; under hydrogen atmosphere, the resistivity increases by 6 orders of magnitude, proving that the material has hydrogen-induced phase transition properties ...

Embodiment 2

[0036] A 30nm strontium rubidium oxide buffer layer was grown on a 1 cm by 1 cm square silicon substrate by pulsed laser deposition (the deposition pressure was 5 pascals in an oxygen atmosphere, and the substrate temperature was 800 degrees Celsius), and then a 100 nm layer was grown by pulsed laser deposition. Nano neodymium nickel oxide (NdNiO 3 ) polycrystalline film (deposition pressure is 30 Pascal oxygen atmosphere, substrate temperature is 700 degrees Celsius). The prepared samarium nickel oxide film has a pure phase structure (such as image 3 As shown), a sudden change in the resistivity of the material is observed at the phase transition temperature point, which proves that the material has temperature-induced phase transition properties; under a hydrogen atmosphere, the resistivity increases by 3 orders of magnitude, proving that the material has hydrogen-induced phase transition properties.

Embodiment 3

[0038] A 30 nm strontium rubidium oxide buffer layer was grown on a 1 cm by 1 cm square quartz substrate by pulsed laser deposition (deposition pressure was 20 Pascal oxygen atmosphere, substrate temperature was 800 degrees Celsius), and then pulsed laser deposition was used to grow 90 Nano samarium nickel oxide (SmNiO 3 ) polycrystalline film (deposition pressure is 25 Pascal oxygen atmosphere, substrate temperature is 500 degrees Celsius). The prepared samarium nickel oxide film has a pure phase structure (such as Figure 4 As shown), a sudden change in the resistivity of the material is observed at the phase transition temperature point, which proves that the material has temperature-induced phase transition properties; under a hydrogen atmosphere, the resistivity increases by 6 orders of magnitude, proving that the material has hydrogen-induced phase transition properties.

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Abstract

The invention discloses a preparation method of a rare earth nickel-based oxide polycrystalline film material, and belongs to the field of inorganic nonmetal film materials. The preparation method comprises the steps that an oxide material buffer layer with lattice parameters similar with that of a rare earth nickel-based perovskite oxide material grows on the surface of a substrate material; and a rare earth nickel-based perovskite oxide film is further deposited on the surface of the buffer layer through a vacuum deposition method. The crystal structure of the rare earth nickel-based perovskite oxide material is the perovskite structure ReNiO3 of ABO3, and the Re position is one rare earth element or the combination of various rare earth elements. The materials of the buffer layer preferentially comprise strontium rubidium oxygen, strontium titanate, lanthanum doped strontium titanate, neodymium doped strontium titanate, barium titanate and calcium titanate. The preparation method of the rare earth nickel-based oxide polycrystalline film material is easy, convenient and efficient. The prepared film material has excellent temperature dependent and hydrogen-induced performance and can be further applied in the fields of functional electronic devices, fuel cells, infrared detectors and the like.

Description

technical field [0001] The invention belongs to the field of inorganic non-metal thin film materials, and in particular relates to a method for preparing a rare earth nickel-based oxide polycrystalline thin film material by designing a lattice parameter buffer layer, and the prepared thin film material has temperature-induced and hydrogen-induced metal-insulator phase transition characteristics , and the properties of proton conductors, it has considerable application value in the preparation of functional electronic devices, sensors, fuel cells, etc. Background technique [0002] Rare earth nickel-based perovskite oxides (ReNiO 3 : Re=Sm, Nd, Eu, etc.) is a classic metal-insulator phase transition (MIT) material [Nat. Rev.Lett., 1999,82,3871; Phys.Rev.B, 2004,69,153105; Phase Transitions, 2008,81,729], with the classical vanadium dioxide (VO 2 ) similar temperature-induced phase transition characteristics. Compared to VO 2 And other kinds of temperature-induced phase ch...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/28C23C14/35C23C14/08
CPCC23C14/08C23C14/28C23C14/35
Inventor 陈吉堃姜勇徐晓光苗君吴勇孟康康
Owner UNIV OF SCI & TECH BEIJING
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