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System for producing silane, monochlorosilane, dichlorosilane and hexachlorodisilane

A technology of hexachlorodisilane and monochlorosilane, applied in the field of chemical synthesis, can solve the problems of limited development, no dichlorosilane and hexachlorodisilane, low selectivity and the like

Active Publication Date: 2021-04-13
内蒙古兴洋科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, the synthesis methods of hexachlorodisilane include silicon powder tetrachloride method, chlorodisilane synthesis method, silicon or silicon alloy chlorination synthesis method, etc.; the production of hexachlorodisilane by silicon powder method has the advantage of cheap raw materials, but Its low selectivity and relatively expensive catalysts limit its development; chlorodisilane also has the advantage of cheap raw materials, but chlorodisilane is generally recovered from polysilicon raffinate, and the source of raw materials is unstable and cannot be produced on a large scale; silicon or silicon There is metal pollution in the products of the alloy method, and the separation process is more cumbersome
[0007] However, there is currently no system and method for dichlorosilane and hexachlorodisilane that can simultaneously produce silane, monochlorosilane

Method used

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  • System for producing silane, monochlorosilane, dichlorosilane and hexachlorodisilane
  • System for producing silane, monochlorosilane, dichlorosilane and hexachlorodisilane
  • System for producing silane, monochlorosilane, dichlorosilane and hexachlorodisilane

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Embodiment 1

[0039] A system for producing silane, monochlorosilane, dichlorosilane and hexachlorodisilane, comprising: raw material synthesis system, silane synthesis system, monochlorosilane synthesis system, dichlorosilane synthesis system and hexachlorodisilane synthesis system; wherein , raw material synthesis system comprises hydrogenation system 1, disproportionation tower one 2, disproportionation tower two 3, condenser one 4 and condenser two 5; Wherein, condenser one 4 is fixed on the top of disproportionation tower one 2, and disproportionation tower one 2 Connected; condenser two 5 is fixed on the top of disproportionation tower two 3, and is communicated with disproportionation tower two 3; The inlet of hydrogenation system 1 is communicated with hexachlorodisilane synthesis system; Top outlet is communicated with the inlet of disproportionation tower one 2; Disproportionation tower The top outlet of disproportionation tower 2 is connected with the inlet of disproportionation t...

Embodiment 2

[0050] A method for producing silane, monochlorosilane, dichlorosilane and hexachlorodisilane, utilizes the system of embodiment 1 to produce, and the process is as follows:

[0051] 1) Send the raw materials hydrogen, silicon powder, and silicon tetrachloride into the hydrogenation system, and catalyze the synthesis of trichlorosilane through a catalyst; the reaction temperature is controlled at 100-800°C, the reaction pressure is controlled at 0.1-2MPa, and the catalyst is a transition metal salt , may be one of nickel, iron, copper, cobalt and zinc;

[0052] 2) Silicon trichloride enters the disproportionation tower 1 for disproportionation reaction, and is catalyzed by the disproportionation tower 1 catalyst to generate TCS and DCS. The mixed gas generated is rectified by the disproportionation tower 1. The silane enters the vaporizer from the tower kettle for separation; the light fraction enters the buffer tank from the upper part of the disproportionation tower one to o...

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Abstract

The invention discloses a system for producing silane, monochlorosilane, dichlorosilane and hexachlorodisilane. The system comprises a raw material synthesis system, a silane synthesis system, a monochlorosilane synthesis system, a dichlorosilane synthesis system and a hexachlorodisilane synthesis system, wherein the raw material synthesis system comprises a hydrogenation system, a disproportionation tower I, a disproportionation tower II, a condenser I and a condenser II; the condenser I is fixed at the top end of the disproportionation tower I and is communicated with the disproportionation tower I; the condenser II is fixed at the top end of the disproportionation tower II and is communicated with the disproportionation tower II; an inlet of the hydrogenation system is communicated with the hexachlorodisilane synthesis system; the top outlet is communicated with the inlet of the disproportionation tower I; the top outlet of the disproportionation tower I is communicated with an inlet of the disproportionation tower II, and a bottom outlet of the disproportionation tower I is communicated with an inlet of the hexachlorodisilane synthesis system; a bottom outlet of the disproportionation tower II is communicated with an inlet of the disproportionation tower I, and a top outlet of the disproportionation tower II is communicated with an inlet of the silane synthesis system.

Description

technical field [0001] The invention relates to the technical field of chemical synthesis, more specifically to a system for producing silane, monochlorosilane, dichlorosilane and hexachlorodisilane Background technique [0002] Silane is mainly used in the preparation of ultra-large or ultra-large-scale integrated circuits, chips, flat panel displays, amorphous silicon thin-film solar cells, growth of high-purity polysilicon, preparation of silicon nitride, preparation of silicon carbide powder, etc. At present, there are three main production processes of silane: silicon-magnesium alloy process and metal hydride process. [0003] Monochlorosilane is an inorganic silicon compound with the chemical formula SiH 3 Cl, the English name is: monochlorosilane, and the English abbreviation is MCS. At present, monochlorosilane is more used as an intermediate to synthesize compounds such as TSA, which is widely used in the semiconductor chip industry and the solar energy industry. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/04C01B33/107
CPCC01B33/04C01B33/10742
Inventor 陶刚义汪俊
Owner 内蒙古兴洋科技股份有限公司
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