Semiconductor device and method of manufacture thereof

a semiconductor and semiconductor technology, applied in the direction of ion implantation coating, crystal growth process, recording by magnetic means, etc., can solve the problems of unacceptable stresses between materials affecting the device, limiting the bulk crystal material that can be grown on any given substrate, and generally not being able to provide cadmium telluride crystal material, etc., to achieve the desired crystal material more quickly, increase the consistency, and accelerate the growth rate
US20090053453A1Inactive Publication Date: 2009-02-26KROMEK
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
KROMEK
Publication Date
2009-02-26
Estimated Expiration
Not applicable · inactive patent

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Abstract

A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.
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Description

FIELD OF THE INVENTION

[0001] The present invention relates to a semiconductor device and a method of manufacture therefore. In particular, the present invention relates to a device comprising a group II-VI material formed on a substrate of a dissimilar material, and a method for forming such a structure.DISCUSSION OF THE PRIOR ART

[0002] Single crystal materials have a number of important applications. For example, bulk cadmium telluride (CdTe) and cadmium zinc telluride (CZT) semiconductors are useful as x-ray and gamma-ray detectors which have application in security screening, medical imaging and space exploration amongst other things.

[0003] For many applications, it is desired to have single crystals of large size and thickness, which can be formed rapidly with optimum uniformity and minimum impurities.

[0004] Traditionally, single crystals have been formed using direct solidification techniques, such as by the Bridgman, travelling heater (THM), gradient freeze (GF) or other liquid ph...

Claims

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