Manufacturing method for silicon carbide monocrystals

Abstract

Disclosed is a method that can stably manufacture thin films or bulk crystals of SiC monocrystals that are suitable for use in various devices and have low carrier densities of 5 1017 / cm3 or less, and preferably less than 1 1017 / cm3, with liquid phase growth technology using a SiC solution that uses a molten Si alloy as the solvent. As the Si alloy, the method uses an alloy having a composition represented by SixCryTiz wherein x, y and z (each is atom%) satisfy (1) 0.50 < x < 0.68, 0.08 < y < 0.35 and 0.08 < z < 0.35 or (2) 0.40 < x = 0.50, 0.15 < y < 0.40 and 0.15 < z < 0.35. x, y and z preferably satisfy 0.53 < x < 0.65, 0.1 < y < 0.3 and 0.1 < z < 0.3.

Description

technical field

[0001] The present invention relates to a method for manufacturing a silicon carbide (SiC) single crystal. The method of the invention can be applied to manufacture SiC single crystal substrates and wafers with SiC epitaxial films, which are especially suitable for electronic devices, optical devices and the like. Background technique

[0002] Silicon carbide (SiC) has favorable material properties such as a wide band gap, high thermal conductivity, and low dielectric constant, so compared with silicon (Si) semiconductors, its operating loss is small, and semiconductor devices with high heat-resistant temperatures can be realized , It is expected to be used in a wide range of power device materials for power control, high-voltage high-frequency device materials, environment-resistant device materials used in high-temperature environments, and radiation-resistant device materials.

[0003] No matter in which application, high-quality SiC single crystal is req...

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