Seed crystal tray, abutment assembly and application thereof for diamond single crystal homoepitaxial growth

A diamond single crystal, homoepitaxial technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of difficult to effectively control the temperature of the seed crystal, and achieve the suppression of excessive edge growth and strong controllability , the effect of stable and effective growth environment

Active Publication Date: 2018-05-01
徐州景澜新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a seed crystal tray for homoepitaxial diamond single crystal, aiming to simultaneously solve the problem that the seed crystal temperature is difficult to be effectively controlled in the existing MPCVD (microwave plasma chemical vapor deposition) system

Method used

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  • Seed crystal tray, abutment assembly and application thereof for diamond single crystal homoepitaxial growth
  • Seed crystal tray, abutment assembly and application thereof for diamond single crystal homoepitaxial growth
  • Seed crystal tray, abutment assembly and application thereof for diamond single crystal homoepitaxial growth

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Embodiment 1

[0051] A method for preparing a diamond single crystal using the above-mentioned abutment assembly, comprising the following steps:

[0052] S11. After cleaning the surface of the seed crystal and the seed crystal tray respectively, place the seed crystal tray on the water-cooling table, place the heat insulation wire in the perforation of the seed crystal tray, and place the seed crystal tray The seed crystal is placed on the thermal insulation wire; specifically,

[0053] Select the seed crystal with a thickness of 1.07mm in mixed acid (HNO 3 :H 2 SO 4 =1:1) for 30 minutes to remove impurities such as metal on the surface of the seed crystal; then placed in a deionized water bath and ultrasonically cleaned for 30 minutes to remove residual acid; then the seed crystal was ultrasonically washed in acetone for 30 minutes to remove impurities such as organic matter. At the same time, the seed crystal tray described in the embodiment of the present invention was also ultrasoni...

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Abstract

The invention is applicable to the technical field of diamond synthesis, and provides a seed crystal tray and base station assembly for diamond monocrystal homoepitaxy, and an application thereof. The seed crystal tray is placed on a water cooling stage of a microwave plasma chemical vapor deposition device, and a through hole for placing a seed crystal is formed in the center of the seed crystal tray. The base station assembly for diamond monocrystal homoepitaxy includes the water cooling stage and the seed crystal tray arranged on the water cooling stage, and the seed crystal tray is the seed crystal tray for diamond monocrystal homoepitaxy.

Description

technical field [0001] The invention belongs to the technical field of diamond synthesis, and in particular relates to a seed crystal tray for diamond single crystal homogeneous epitaxy, a base assembly and applications thereof. Background technique [0002] Diamond integrates many excellent properties. It has the advantages of extremely high hardness, thermal conductivity, wide transmission spectral band, wide band gap and high electron-hole mobility. It can be widely used in tools, coatings, optical windows and acoustic sensors. , semiconductors and electronic devices. At present, the demand for diamond is large, but the reserves of natural diamond are very small. Therefore, it is particularly urgent to synthesize large-size and high-quality diamond single crystals. The microwave plasma chemical vapor deposition (MPCVD) method has many advantages such as no electrode pollution, stable equipment, concentrated plasma density without diffusion, and effectively repeatable sam...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/04C30B25/12C30B25/20
CPCC30B25/12C30B25/20C30B29/04
Inventor 唐永炳牛卉卉朱雨
Owner 徐州景澜新材料科技有限公司
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