Seed crystal tray and base station assembly for diamond monocrystal homoepitaxy, and application thereof
A diamond single crystal, homoepitaxial technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem that the temperature of the seed crystal is difficult to be effectively controlled, so as to suppress the excessive growth of the edge, improve the quality, and achieve strong control effect
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- Publication Date
- 2016-04-27
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of diamond synthesis, and in particular relates to a seed crystal tray for diamond single crystal homogeneous epitaxy, a base assembly and applications thereof. Background technique
[0002] Diamond integrates many excellent properties. It has the advantages of extremely high hardness, thermal conductivity, wide transmission spectral band, wide band gap and high electron-hole mobility. It can be widely used in tools, coatings, optical windows and acoustic sensors. , semiconductors and electronic devices. At present, the demand for diamond is large, but the reserves of natural diamond are very small. Therefore, it is particularly urgent to synthesize large-size and high-quality diamond single crystals. The microwave plasma chemical vapor deposition (MPCVD) method has many advantages such as no electrode pollution, stable equipment, concentrated plasma density without diffusion, and effectively repeatable sam...
Examples
Embodiment 1
[0051] A method for preparing a diamond single crystal using the above-mentioned abutment assembly, comprising the following steps:
[0052] S11. After cleaning the surface of the seed crystal and the seed crystal tray respectively, place the seed crystal tray on the water-cooling table, place the heat insulation wire in the perforation of the seed crystal tray, and place the seed crystal tray The seed crystal is placed on the thermal insulation wire; specifically,
[0053] Select the seed crystal with a thickness of 1.07mm in mixed acid (HNO 3 :H 2 SO 4 =1:1) for 30 minutes to remove impurities such as metal on the surface of the seed crystal; then placed in a deionized water bath and ultrasonically cleaned for 30 minutes to remove residual acid; then the seed crystal was ultrasonically washed in acetone for 30 minutes to remove impurities such as organic matter. At the same time, the seed crystal tray described in the embodiment of the present invention was also ultrasoni...