Nanowire based vertical circular grating transistor and preparation method thereof

Abstract

The invention discloses a nanowire based vertical circular grating transistor and a preparation method thereof. According to the structure, a conducting channel material is an intrinsic or low doped nanowire perpendicular to a substrate; a low-resistance nanowire is connected above the intrinsic or low doped nanowire in a gapless manner; the intrinsic or low doped nanowire is surrounded by a source electrode, a gate medium and a gate electrode sequentially from bottom to top; the source electrode and the gate medium as well as the gate medium and the grate electrode are connected in the position of the side wall of the nanowire in a gapless manner; the low-resistance nanowire is surrounded by a drain electrode; and three isolation layers are arranged among the electrodes. The invention further provides the preparation method of the transistor. Both the source electrode and the gate electrode are obtained with the method that firstly, a metal film is plated and then metal above BCB (benzocyclobutene) is eroded by using BCB as a mask; and the low-resistance nanowire is obtained through heavy doping of the intrinsic or low doped nanowire or through metal alloy. According to the short-channel transistor structure and the preparation method, a device with a short channel can be prepared, the parasitic resistance and the parasitic capacitance can be effectively reduced, and the device performance is improved.

Description

technical field [0001] The invention belongs to the technical field of nanoelectronics, and in particular relates to a vertical gate-around transistor based on nanowires and a preparation method thereof. Background technique [0002] With the development of the semiconductor industry, the integration of chips is getting higher and higher, and the size of a single MOS device is getting smaller and smaller. Various problems caused by size reduction have begun to appear, one of which is the short-channel effect. In order to suppress the short-channel effect, various gate structures, such as SOI and FinFET, have been proposed. Among all the gate structures, the gate-around structure can greatly improve the ability of gate regulation and suppress the short channel effect. Compared with traditional bulk materials, one-dimensional materials such as nanowires have the natural advantage of being easy to prepare gate-all-around structures. [0003] Among semiconductor materials, the...

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Problems solved by technology

However, in the device structure of this article, there is an unregulated nanowire between the source and the gate, and between the gate and the drain. This nanowire introduces a parasitic resistance that has a great influence and inhibits the RF performance of the device. promotion

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