Dielectric composite material comprising benzocyclobutene which contains a filler in order to decrease the coefficient of thermal expansion.
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A composite material, phencyclobutene technology, applied in the direction of circuit substrate materials, circuits, printed circuits, etc., can solve problems such as wafer or substrate bending, wafer/substrate cannot be handled, etc.
Inactive Publication Date: 2006-07-19
3M INNOVATIVE PROPERTIES CO
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Coating thicknesses are typically less than 20 μm due to the relatively high BCB curing stress, which often...
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[0028] The dielectric composite of the present invention is a highly filled tough benzocyclobutene (BCB) resin. BCB resins are commercially available from Dow Chemical under the trademark CYCLOTENE. BCB polymers have excellent dielectric properties, including dielectric constant and loss, and can go well into the higher frequency range (1-40GHz) even under high-humidity operating conditions. One example of the protocol described here uses prepolymerized, or "b-staged," divinylsiloxane diphenylcyclobutene, which is commercially available from Dow Chemical Company.
[0029] In order to provide advanced dielectrics for multilayer electronic packaging applications and to meet all the requirements required for advanced dielectric materials, highly filled dielectric polymer composites are formed based on tough benzocyclobutene (BCB) and inorganic filler particles . Tough BCB materials exhibit much improved mechanical properties and can be stretched up to about 35% without macrosco...
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Abstract
A dielectric composite material containing a toughened benzocyclobutene resin and at least about 50% by weight of an inorganic filler. Also electronic packages having at least one conductive layer and at least one layer of the dielectric composite material. The dielectric composite material can have a dielectric constant less than about 3.5, and a dielectric loss of less than about 0.004.
Description
technical field [0001] The present invention relates to a dielectric composite material suitable for use in electronic packaging and to electronic packaging made of such a dielectric material. Background technique [0002] Only few dielectric materials are available for high-performance electronic applications. For use in high-speed interconnects, materials must have low dielectric constant, low loss, and must be able to adhere to other materials to which they may be bonded, such as copper, chromium, zinc, aluminum, silicon oxide, silicon nitride (SiN), nitride Titanium (TiN), plasma enhanced oxide (PEOX), phosphosilicate glass (PSG), etc. Furthermore, the material must be processable using conventional fabrication techniques such as spin coating, die coating, chemical mechanical polishing, dry etching, imaging, laser ablation, hot / cold pressing, and the like. Other desirable material properties include low moisture absorption, outstanding chemical resistance, good thermal...
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