491results about "Metallic oxides" patented technology

The prevent invention provides a partial discharge-resistant wire enamel composition wherein at least one fine particle sol selected from the group of metal oxide fine particle sol and silicon oxide fine particle sol is dispersed, and 3 to 100 parts by weight of at least one fine particle selected from the group of a metal oxide fine particle and a silicon oxide fine particle is contained per 100 parts by weight of wire enamel resin. Accordingly, the partial discharge-resistant wire enamel composition having excellent dispersibility of inorganic fine particle can be obtained.

An electrically insulated conductor for carrying signals or current includes a solid or stranded copper core of various geometries with only a single electrically insulating and thermally conductive layer of anodized aluminum (aluminum oxide). The device is made by forming a uniform thickness thin sheet or foil of aluminum to envelop the copper or copper alloy core. The aluminum has its outer surface partially anodized either before or after forming to the core in an electrolytic process to form a single layer of aluminum oxide.

Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T / Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.

A photosensitive composition for forming a dielectric of the present invention comprising inorganic particles, an alkali developable resin and additives, wherein the additives comprise a compound having a quinonediazido group (C1), a compound containing at least two alkyletherified amino groups in the molecule (C2) and a thermal acid generator (C3), or wherein the inorganic particles comprise inorganic superfine particles (A-I) having a mean particle diameter of less than 0.05 μm and inorganic fine particles (A-II) having a mean particle diameter of not less than 0.05 μm.The composition can be calcined at low temperatures to form a dielectric layer with high dimensional precision, said layer having a high dielectric constant and a low dielectric loss. Also provided are a dielectric and an electronic part prepared from the composition.

Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T / Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.

The dielectric-forming composition according to the invention is characterized by consisting of: composite particles for dielectrics in which part or all of the surfaces of inorganic particles with permittivity of 30 or greater are coated with a conductive metal or a compound thereof, or a conductive organic compound or a conductive inorganic material; and (B) a resin component constituted of at least one of a polymerizable compound and a polymer. <??>In addition, another dielectric-forming composition according to the invention is characterized by containing: ultrafine particle-resin composite particles composed of (J) inorganic ultrafine particles with the average particle size of 0.1 mu m or smaller, and (B) a resin component constituted of at least one of a polymerizable compound and a polymer, wherein part or all of the surfaces of the inorganic ultrafine particles (J) are coated with the resin component (B), and the ultrafine particle-resin composite particles contain 20% by weight or more of the inorganic ultrafine particles (J); and inorganic particles with the average particle size of 0.1 to 2 mu m and permittivity of 30 or greater, or inorganic composite particles in which a conductive metal or a compound thereof, or a conductive organic compound or a conductive inorganic material is deposited on the part or all of the surfaces of the inorganic particles.

A dielectric ceramic composition, comprising a main component including a dielectric oxide, and a sintering auxiliary comprising a first component including an oxide of Li and a second component including an oxide of M1 (note that M1 is at least one kind of element selected from group V elements and VI group elements): wherein said dielectric ceramic composition comprises a plurality of dielectric particles and crystal grain boundaries existing between said dielectric particles next to each other; concentration of M1 element becomes lower from a particle surface to inside thereof in the plurality of dielectric particles; and when assuming that a particle diameter of said dielectric particles is D and a content ratio of the M1 element at said crystal grain boundaries is 100%, a content ratio of the M1 element at a depth T 50 , where a depth from the particle surface is 50% of said particle diameter D, is 3 to 55%.