Low dielectric constant composite and preparation method thereof

A low dielectric constant, composite material technology, used in the production of hydrocarbons from halogen-containing organic compounds, circuits, electrical components, etc., can solve the problem of poor thermal conductivity, unsatisfactory thermal stability and mechanical properties, loose structure of ordinary porous materials, etc. question

Inactive Publication Date: 2008-07-23
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Some of these polymers have a low dielectric constant (around 2.65), but this value cannot meet the needs of the modern microelectronics industry, and its thermal stability and mechanical properties are not very satisfactory
[0005] Porous materials can greatly reduce the dielectric constant and loss by reducing the density of polarized molecules (research shows that the dielectric constant of non-porous bulk materials is difficult to reach below 2.0), but generally porous materials have poor thermal conductivity, generally only SiO 2 Tens of a tenth of that, it will cause the temperature of the interconnection system in the circuit to rise, the volum

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) Preparation of composite film:

[0021] Add 1-bromobenzocyclobutene (1-BrBCB) and silica nanoparticles (with a particle size of 20nm and a pore size of 8nm) into mesitylene to form a solution, and stir until uniform to obtain a spin-coating solution. Films are formed on single crystal silicon wafers by the glue-spinning method.

[0022] Above-mentioned each component parts by weight are as follows:

[0023] 1-BrBCB 125

[0024] Silica Nanoparticles 13

[0025] Mesitylene 170

[0026] (2) Polymerization of composite film:

[0027] Place the monocrystalline silicon wafer coated with 1-bromobenzocyclobutene and silicon dioxide nanoparticles prepared in (1) in a flat-bottomed cup with a stopper, vacuumize and vent nitrogen to remove oxygen and residual The solvent was kept at 75°C for 35 minutes, then slowly raised to 330°C and kept for 65 minutes, and then slowly lowered to room temperature.

[0028] The dielectric constant (measured by the dielectric spectromete...

Embodiment 2

[0030] (1) Preparation of composite film:

[0031] 4-aminobenzocyclobutene (4-NH 2 BCB), silicon dioxide nanoparticles (particle size 10nm, pore size 8nm) were added to xylene to form a solution, stirred until uniform to obtain a spin coating solution, and a film was formed on a single crystal silicon wafer by the gel-spinning method.

[0032] Above-mentioned each component parts by weight are as follows:

[0033] 4-NH 2 BCB 120

[0034] Silica Nanoparticles 10

[0035] Xylene 160;

[0036] (2) Polymerization of composite film:

[0037] Place the monocrystalline silicon wafer coated with 4-aminobenzocyclobutene and silicon dioxide nanoparticles prepared in (1) in a flat-bottomed cup with a stopper, vacuumize and vent nitrogen to remove oxygen and residual The solvent was kept at 70°C for 80 minutes, then slowly raised to 350°C and kept for 120 minutes, and then slowly lowered to room temperature.

[0038] The dielectric constant of the film made of this benzocyclobutene...

Embodiment 3

[0040] (1) Preparation of composite film:

[0041] 4-aminobenzocyclobutene (4-NH 2 BCB), 1-bromobenzocyclobutene (1-BrBCB), and titanium dioxide nanoparticles (50nm in particle size, 30nm in pore size) were added to tetrahydrofuran to form a solution, and stirred until uniform to obtain a spin-coating solution, which was obtained by spinning Glue method to form a film on a quartz glass sheet.

[0042] Above-mentioned each component parts by weight are as follows:

[0043] 4-NH 2 BCB 70

[0044] 1-BrBCB 75

[0045] Titanium dioxide nanoparticles 30

[0046] Tetrahydrofuran 315

[0047] (2) Polymerization of composite film:

[0048] The quartz glass sheets prepared in (1) and coated with 4-aminobenzocyclobutene, 1-bromobenzocyclobutene (1-BrBCB) and titanium dioxide nanoparticles were placed in a stoppered flat-bottomed cup, Evacuate the system with nitrogen to remove oxygen and residual solvent, keep at 100° C. for 25 minutes, then slowly heat up to 190° C. and hold for 4...

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PUM

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Abstract

The invention discloses a composite material with low dielectric constant and a process for preparation. The composite material with low dielectric constant includes benzocyclobutene and hollow inorganic nano-particles or includes benzocyclobutene derivative and hollow inorganic nano-particles. The process for preparation comprises adding benzocyclobutene and hollow inorganic nano-particles in a solvent, or adding benzocyclobutene derivative and hollow inorganic nano-particles to the solvent, mixing evenly to prepare spin coating liquid, forming films on a substrate by employing whirl coating method, positioning the prepared substrate in a tumbler with a stopper, then evacuating, inputting nitrogen, removing oxygen and remaining solvent in the system, keeping the temperature between 70 DEG C and 100 DEG C for 20-80 minutes, then increasing the temperature to 190-350 DEG C and keeping for 40-120 minutes, lowering the temperature and obtaining composite material with low dielectric constant. The prepared composite material has the advantages of low dielectric constant, high heat stability, high chemical stability, simple preparation and the like.

Description

technical field [0001] The invention relates to a low dielectric constant composite material and a preparation method thereof, in particular to a low dielectric constant composite material composed of benzocyclobutene and its derivatives-hollow nanometer microspheres and a preparation method thereof. technical background [0002] In the rapidly developing microelectronics industry, high-speed, high-density, multi-functional high-performance ultra-large-scale integrated circuits (ULSI), such as dynamic random access memory chips (DRAM), microprocessors (MPU), application-specific integrated circuits (ASIC) The use of etc., its small feature size and large chip area lead to increased wiring density. When the feature size of the device is gradually reduced, the number of multi-layer wiring and logic interconnection layers increases, which increases the resistance of the wires and the capacitance between wires and layers. , RC delay increases, resulting in a series of problems s...

Claims

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Application Information

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IPC IPC(8): H01B3/00C07C1/28C07C13/44H01L21/31H01L21/768
Inventor 曾钫黄伟平
Owner SOUTH CHINA UNIV OF TECH
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