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Hybrid integrated laser based on BCB (benzocyclobutene) bonding process and manufacturing method thereof

A hybrid integration and bonding process technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of low heat dissipation efficiency and low output power, and achieve the effect of improving heat dissipation efficiency, reducing production costs, and being easy to package.

Active Publication Date: 2013-01-30
南通新微研究院 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a hybrid integrated laser based on BCB bonding process and its manufacturing method, which is used to solve the problems of low output power and low heat dissipation efficiency of microdisk lasers in the prior art. question

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  • Hybrid integrated laser based on BCB (benzocyclobutene) bonding process and manufacturing method thereof
  • Hybrid integrated laser based on BCB (benzocyclobutene) bonding process and manufacturing method thereof
  • Hybrid integrated laser based on BCB (benzocyclobutene) bonding process and manufacturing method thereof

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Embodiment 1

[0060] Such as Figure 1~Figure 11 As shown, the present embodiment provides a method for manufacturing a hybrid integrated laser based on a BCB bonding process, and the method at least includes the following steps:

[0061] Such as Figure 1~Figure 3 As shown, step 1) is first performed, providing an SOI-based optical waveguide chip including a silicon substrate 101, a buried oxide layer 102, and a silicon waveguide structure 103, and a bottom contact layer 105, an active layer, a tunnel junction, and a top contact layer. Group III-V laser epitaxial layers 105-106, form a BCB cladding layer on the surface of the SOI-based optical waveguide chip, and bond the SOI optical waveguide chip and the III-V group laser epitaxial layer through the BCB cladding layer 104 Layer 105~106.

[0062] The silicon waveguide structure 103 is a strip-shaped silicon waveguide structure 103, and the strip-shaped silicon waveguide structure 103 may be, but not limited to, a linear strip-shaped sili...

Embodiment 2

[0071] Such as Figure 11 As shown, this embodiment provides a hybrid integrated laser based on BCB bonding process, the hybrid integrated laser at least includes:

[0072] SOI-based optical waveguide chip, including a silicon substrate 101, a buried oxide layer 102 bonded to the surface of the silicon substrate 101, and a silicon waveguide structure 103 fabricated on the surface of the buried oxide layer 102;

[0073] BCB cladding layer 104, covering the buried oxide layer 102 and the surface of the silicon waveguide structure 103;

[0074] Group III-V laser epitaxial layers 105-106, including a bottom contact layer 105 bonded to the surface of the BCB cladding layer 104, an active layer partially bonded to the bottom contact layer 105, and a tunnel junction bonded to the active layer and a top contact layer bonded to the tunnel junction;

[0075] The heat sink through hole 108 runs through the III-V laser epitaxial layers 105-106, the BCB cladding layer 104 and the buried ...

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Abstract

The invention provides a hybrid integrated laser based on BCB (benzocyclobutene) bonding process and a manufacturing method thereof. The hybrid integrated laser comprises an SOI-based optical waveguide chip including a silicon substrate, a buried oxide layer and a silicon waveguide structure, a BCB coating layer, a III-V group laser epitaxial layer, a heat sink through hole and a polycrystalline silicon heat sink filled in the heat sink through hole, wherein the III-V group laser epitaxial layer is provided with a bottom contact layer, an active layer, a tunnel junction and a top contact layer; the heat sink through hole runs through the III-V group laser epitaxial layer, the BCB coating layer and the buried oxide layer, as well as a silicon nitride isolation layer combined with the he surface of the III-V group laser epitaxial layer and provided with electrode through holes and an electrode structure. The hybrid integrated laser based on BCB bonding process and the manufacturing method thereof realize the monolithic integration of the SOI-based optical waveguide chip and the III-V group laser epitaxial layer by adopting the BCB bonding process, and improve the performance of the laser by introducing the polycrystalline silicon heat sink structure. The hybrid integrated laser based on BCB bonding process can be used as a silicon substrate light source device and provides an on-chip light source for a silicon substrate light integrated chip.

Description

technical field [0001] The invention relates to a laser and a manufacturing method thereof, in particular to a hybrid integrated laser based on a BCB bonding process and a manufacturing method thereof. Background technique [0002] Silicon-based optical interconnect technology aims to use CMOS technology to produce and develop silicon photonic devices, and integrate silicon-based photonic devices and circuits on the same silicon chip. It is an inevitable way to develop large-capacity, high-performance parallel processing computer systems and communication equipment. Combining microelectronics technology and photonics technology to develop photoelectric hybrid integrated circuits. Introducing integrated optical circuits inside integrated circuits and between chips can not only take advantage of the advantages of fast optical interconnection, no interference, high density, and low power consumption, but also make full use of mature microelectronics technology, high-density int...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/323H01S5/024H01S5/22
Inventor 盛振王智琪甘甫烷武爱民王曦邹世昌
Owner 南通新微研究院
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