Carbon-based field effect transistor and preparation method thereof

Abstract

The invention relates to a carbon-based field effect transistor and a preparation method thereof, and belongs to the technical field of nanoelectronics. The carbon-based field effect transistor comprises a semiconductor substrate, an insulating layer, a conductive channel, a source electrode, a drain electrode, a gate dielectric layer and a gate electrode, wherein the insulating layer is arranged on the semiconductor substrate, and the conductive channel is arranged on the insulating layer; the conductive channel is made of a carbon-based material, and the source electrode and the drain electrode are respectively arranged at the two ends of the conductive channel; the gate dielectric layer is covered on the source electrode, the drain electrode, and the conductive channel arranged between the source electrode and the drain electrode, and the gate electrode is positioned above the gate dielectric layer; and the gate dielectric layer comprises a benzocyclobutene organic dielectric layer. According to the carbon-based field effect transistor and the preparation method thereof, the problem that a high-dielectric-constant gate dielectric film directly grows on the conductive chanel formed by a carbon-based material in the atomic layer deposition method, and the benzocyclobuten provides an atomic layer deposition nucleation center without causing a significant decrease in the carrier mobility of the carbon-based material and causing the decline in the device performance.

Description

technical field [0001] The invention relates to a field-effect transistor and a preparation method thereof, in particular to a carbon-based field-effect transistor and a preparation method thereof, and belongs to the technical field of nanoelectronics. Background technique [0002] Nanoelectronics based on carbon materials, especially those based on carbon nanotubes (Carbon Nanotube) and graphene (Graphene), are considered to have great application prospects and great potential to replace silicon-based materials. Since the successful development of carbon nanotubes in 1991 and graphene in 2004, carbon-based electronics has made great progress. Carbon-based electronics have attracted more and more attention because of their small size, high speed, low power consumption, and simple process. [0003] The performance of field effect transistors is affected by two most important factors, one is the material properties, which determine the potential of device performance; the oth...

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However, no matter which treatment method is used, an additional scattering mechanism will be introdu

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