Method for preparing core-shell organic/cadmium sulfide nanowire heterojunction arrays
An organic nanowire and nanotube array technology, which is applied in the preparation field of core-shell organic cadmium sulfide semiconductor nanowire heterojunction and cadmium sulfide nanotube array, can solve the problem of organic nanowire crystal quality damage, poor controllability, and difficulty in problems of precise control
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Embodiment 1
[0042] Example 1: Preparation of CdS-CuPc heterojunction nanowires
[0043] A 6nm gold thin film was deposited on a silicon substrate by electron beam evaporation, and copper phthalocyanine nanowire arrays were grown by physical vapor deposition. Concrete growth parameter is as follows: according to the flowing direction of airflow, the porcelain boat that copper phthalocyanine powder is housed is put into the high-temperature zone of vacuum tube furnace; The center of the temperature zone is about 10-20cm; start the mechanical pump to evacuate, so that the vacuum degree in the furnace chamber of the vacuum tube furnace is below 1Pa, and then pass into the inert gas in the quartz tube, and the gas flow rate is 30-60sccm; when the quartz tube When the medium is completely in an inert gas atmosphere, while maintaining the inert gas inflow; control the tube furnace to increase the temperature to 415 °C at a rate of 20 °C / min, and then keep the temperature for 30 min to fully proc...
Embodiment 2
[0048] Example 2: Preparation of CdS-PTCDA heterojunction nanowires
[0049] Perylenetetracarboxylic dianhydride nanowire arrays were grown by physical vapor deposition. The specific growth parameters are as follows: according to the flow direction of the air flow, a porcelain boat containing an appropriate amount of perylenetetracarboxylic dianhydride powder is placed in the high temperature zone of the vacuum tube furnace; and the cleaned silicon substrate is placed in the low temperature zone of the vacuum tube furnace. Zone, about 10-20cm away from the center of the temperature zone; start the mechanical pump to evacuate, so that the vacuum degree in the furnace chamber of the vacuum tube furnace is below 1Pa, and then pass inert gas into the quartz tube, and the gas flow rate is 30-60sccm; When the quartz tube is completely in an inert gas atmosphere, while keeping the inert gas flowing in, control the tube furnace to raise the temperature to 415°C at a rate of 20°C / min, ...
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