Thin film crystalline silicon perovskite heterojunction solar battery and preparation method thereof

Abstract

The invention relates to a thin film crystalline silicon perovskite heterojunction solar battery and a preparation method thereof, and relates to a semiconductor device for converting luminous energy into electric energy. The thin film crystalline silicon perovskite heterojunction solar battery includes a transparent conductive substrate, a P-type thin film crystalline silicon hole transport layer, a perovskite light absorption layer, an electron transport layer formed by compact titanium dioxide, and a back electrode, wherein the perovskite light absorption layer and the P-type thin film crystalline silicon hole transport layer have matched energy levels. The configuration pattern: the P-type thin film crystalline silicon hole transport layer is arranged on the transparent conductive substrate; the perovskite light absorption layer is arranged on the P-type thin film crystalline silicon hole transport layer; the perovskite light absorption layer and the P-type thin film crystalline silicon hole transport layer form a thin film crystalline silicon perovskite heterojunction; the electron transport layer formed by the compact titanium dioxide is arranged on the perovskite light absorption layer; the back electrode is arranged on the electron transport layer formed by the compact titanium dioxide. According to the invention, the defects that the existing perovskite solar battery is low in stability and high in preparation cost, and a mass of silicon materials are used can be overcame.

Description

technical field

[0001] The technical solution of the invention relates to a semiconductor device specially suitable for converting light energy into electric energy, specifically a thin-film crystal silicon perovskite heterojunction solar cell and a preparation method thereof. Background technique

[0002] Compared with crystalline silicon cells, which are difficult to further reduce the manufacturing cost of crystalline silicon materials, the perovskite material CH 3 NH 3 wxya 3 (X=Cl, Br, orI) as the main light-absorbing layer of solar cells (hereinafter referred to as perovskite solar cells) photoelectric conversion efficiency of more than 20%, and has a thin film, room temperature solution preparation, no rare elements low manufacturing Cost characteristics, great application prospects. In perovskite solar cells with various structures, the P-type bulk silicon material of traditional monocrystalline silicon and polycrystalline silicon solar cells is directly used as t...

Examples

Embodiment 1

[0060] The first step is to prepare a P-type thin film crystalline silicon hole transport layer on a transparent conductive substrate:

[0061] Use a P-type single crystal silicon wafer coated with a layer of corrosion-resistant metal on the back as the anode, and use platinum as the cathode. anodic oxidation with an electric current, corrode the P-type single crystal silicon wafer by electrochemical method, and form a porous silicon structure on the surface of the single crystal silicon wafer, and then form the single crystal silicon wafer with the porous silicon structure in H 2 Annealing at 200°C to 550°C in the atmosphere, during the annealing process, the holes in the small porosity layer on the surface of the single crystal silicon wafer will gradually close to form a quasi-single crystal layer as a template for epitaxial devices. The P-type thin film crystalline silicon film is epitaxially formed on the layer, and the formed P-type crystalline silicon film is transferre...

Embodiment 2

[0081] The first step is to prepare a P-type thin film crystalline silicon hole transport layer on a transparent conductive substrate:

[0082] With a P-type single crystal silicon wafer coated with a layer of corrosion-resistant metal on the back as the anode and platinum as the cathode, in a hydrofluoric acid ethanol solution with a volume ratio of hydrofluoric acid: absolute ethanol = 1:1, the size is 4.5 The current of A is anodized, and the P-type single crystal silicon wafer is corroded by an electrochemical method to form a porous silicon structure on the surface of the single crystal silicon wafer, and then the single crystal silicon wafer with a porous silicon structure is formed in H 2 Annealing at 200°C to 550°C in the atmosphere, during the annealing process, the holes in the small porosity layer on the surface of the single crystal silicon wafer will gradually close to form a quasi-single crystal layer as a template for epitaxial devices. The P-type thin film crys...

Embodiment 3

[0102] The first step is to prepare a P-type thin film crystalline silicon hole transport layer on a transparent conductive substrate:

[0103] With a P-type single crystal silicon wafer coated with a layer of corrosion-resistant metal on the back as the anode, and platinum as the cathode, in a hydrofluoric acid ethanol solution with a volume ratio of hydrofluoric acid: absolute ethanol = 1:1, a size of 7.5 The current of A is anodized, and the P-type single crystal silicon wafer is corroded by an electrochemical method to form a porous silicon structure on the surface of the single crystal silicon wafer, and then the single crystal silicon wafer with a porous silicon structure is formed in H 2 Annealing at 200°C to 550°C in the atmosphere, during the annealing process, the holes in the small porosity layer on the surface of the single crystal silicon wafer will gradually close to form a quasi-single crystal layer as a template for epitaxial devices. The P-type thin film cryst...

technical field

[0001] The technical solution of the invention relates to a semiconductor device specially suitable for converting light energy into electric energy, specifically a thin-film crystal silicon perovskite heterojunction solar cell and a preparation method thereof. Background technique

[0002] Compared with crystalline silicon cells, which are difficult to further reduce the manufacturing cost of crystalline silicon materials, the perovskite material CH 3 NH 3 wxya 3 (X=Cl, Br, orI) as the main light-absorbing layer of solar cells (hereinafter referred to as perovskite solar cells) photoelectric conversion efficiency of more than 20%, and has a thin film, room temperature solution preparation, no rare elements low manufacturing Cost characteristics, great application prospects. In perovskite solar cells with various structures, the P-type bulk silicon material of traditional monocrystalline silicon and polycrystalline silicon solar cells is directly used as t...

Examples

Embodiment 1

[0060] The first step is to prepare a P-type thin film crystalline silicon hole transport layer on a transparent conductive substrate:

[0061] Use a P-type single crystal silicon wafer coated with a layer of corrosion-resistant metal on the back as the anode, and use platinum as the cathode. anodic oxidation with an electric current, corrode the P-type single crystal silicon wafer by electrochemical method, and form a porous silicon structure on the surface of the single crystal silicon wafer, and then form the single crystal silicon wafer with the porous silicon structure in H 2 Annealing at 200°C to 550°C in the atmosphere, during the annealing process, the holes in the small porosity layer on the surface of the single crystal silicon wafer will gradually close to form a quasi-single crystal layer as a template for epitaxial devices. The P-type thin film crystalline silicon film is epitaxially formed on the layer, and the formed P-type crystalline silicon film is transferre...

Embodiment 2

[0081] The first step is to prepare a P-type thin film crystalline silicon hole transport layer on a transparent conductive substrate:

[0082] With a P-type single crystal silicon wafer coated with a layer of corrosion-resistant metal on the back as the anode and platinum as the cathode, in a hydrofluoric acid ethanol solution with a volume ratio of hydrofluoric acid: absolute ethanol = 1:1, the size is 4.5 The current of A is anodized, and the P-type single crystal silicon wafer is corroded by an electrochemical method to form a porous silicon structure on the surface of the single crystal silicon wafer, and then the single crystal silicon wafer with a porous silicon structure is formed in H 2 Annealing at 200°C to 550°C in the atmosphere, during the annealing process, the holes in the small porosity layer on the surface of the single crystal silicon wafer will gradually close to form a quasi-single crystal layer as a template for epitaxial devices. The P-type thin film crys...

Embodiment 3

[0102] The first step is to prepare a P-type thin film crystalline silicon hole transport layer on a transparent conductive substrate:

[0103] With a P-type single crystal silicon wafer coated with a layer of corrosion-resistant metal on the back as the anode, and platinum as the cathode, in a hydrofluoric acid ethanol solution with a volume ratio of hydrofluoric acid: absolute ethanol = 1:1, a size of 7.5 The current of A is anodized, and the P-type single crystal silicon wafer is corroded by an electrochemical method to form a porous silicon structure on the surface of the single crystal silicon wafer, and then the single crystal silicon wafer with a porous silicon structure is formed in H 2 Annealing at 200°C to 550°C in the atmosphere, during the annealing process, the holes in the small porosity layer on the surface of the single crystal silicon wafer will gradually close to form a quasi-single crystal layer as a template for epitaxial devices. The P-type thin film cryst...

Images