Multiple quantum well for ultraviolet light emitting diode and a production method therefor

A technology of light-emitting diodes and multiple quantum wells, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of low light-emitting efficiency of light-emitting diodes and achieve the effect of suppressing dislocations
CN103703576APending Publication Date: 2014-04-02CHIP TECH
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
CHIP TECH
Publication Date
2014-04-02

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Abstract

Provided is a multiple quantum well for an ultraviolet light emitting diode, comprising: an Alx1Ga1-x1N barrier unit in which are alternately disposed an AlN barrier atomic layer and a GaN barrier atomic layer on the AlN barrier atomic layer; and an Alx2Ga1-x2N quantum well unit in which are alternately disposed an AlN well atomic layer formed on the Alx1Ga1-x1N barrier unit and a GaN well atomic layer formed on the AlN well atomic layer. The Al compositional ratio (x1) in the Alx1Ga1-x1N barrier unit is between 0 and 0.7; the Al compositional ratio (x2) in the Alx2Ga1-x2N quantum well unit is between 0 and 0.7; the Al compositional ratio (x1) in the Alx1Ga1-x1N barrier unit is larger than the Al compositional ratio (x2) in the Alx2Ga1-x2N quantum well unit; and the Alx1Ga1-x1N barrier unit and the Alx2Ga1-x2N quantum well unit are alternately laminated at least twice.
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Description

technical field

[0001] The present invention relates to multi-quantum wells for ultraviolet light-emitting diodes and a manufacturing method thereof. More specifically, it relates to an atomic layer deposition method (Atomic Layer Deposition; ALD) capable of achieving low-temperature deposition, which alternately forms barrier layers of high-quality thin films A multi-quantum well for an ultraviolet light-emitting diode capable of effectively suppressing dislocation and a quantum well layer and a manufacturing method thereof. Background technique

[0002] Recently, GaN-based light-emitting diodes (Light Emitting Diodes; LEDs) have attracted attention as next-generation light-emitting elements that can maximize energy saving. The light-emitting region of such GaN-based light-emitting diodes has expanded from visible light to ultraviolet rays.

[0003] Conventional light-emitting diodes with multiple quantum well structures use Metal Organic Chemical Vapor Deposition (MOCVD) t...

Claims

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