Group iii nitride semiconductor epitaxial substrate

A nitride semiconductor and epitaxial substrate technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, from chemically reactive gases, etc., can solve problems such as insufficient crystal quality and difficult crystal growth, and achieve improved crystal quality. The effect of suppressing cracks
CN101778967AInactive Publication Date: 2010-07-14SHOWA DENKO KK
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHOWA DENKO KK
Publication Date
2010-07-14
Estimated Expiration
Not applicable · inactive patent

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Abstract

Disclosed is a group III nitride semiconductor epitaxial substrate, specifically an AlxGa1-xN epitaxial substrate (0 = x = 1), which is improved in crystal quality by suppressing generation of cracks and dislocations. More specifically disclosed is an AlxGa1-xN epitaxial substrate (0 < x = 1), which is useful for a light-emitting device of ultraviolet or deep ultraviolet region. The group III nitride semiconductor epitaxial substrate is composed of a base and an AlxGa1-xN (0 = x = 1) layer arranged on the base. This group III nitride semiconductor epitaxial substrate is characterized in that a layer, wherein crystals having -C polarity and crystals having +C polarity are mixed, is arranged on the base side of the AlxGa1-xN layer.
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Description

technical field

[0001] The present invention relates to a Group III nitride semiconductor epitaxial substrate, in particular to a Group III nitride semiconductor epitaxial substrate suitable for a light-emitting element in the ultraviolet or deep ultraviolet region. Background technique

[0002] Group III nitride semiconductors have conventionally been used as functional materials for constituting group III nitride semiconductor light-emitting devices having pn junction structures such as light-emitting diodes (LEDs) and laser diodes (LDs) that emit short-wavelength visible light. In this case, in order to improve the quality of the light-emitting layer, for example, when constituting an LED that emits light in the blue band or green band using gallium indium nitride (GaInN) as the light-emitting layer, gallium nitride ( GaN) (hereinafter referred to as the base layer) improves crystallinity and facilitates light extraction. In addition, for devices such as LDs that require...

Claims

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