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Method for growing silicon single crystal

A growth method, single crystal silicon technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of poor productivity and yield, and achieve the effect of suppressing dislocations

Active Publication Date: 2008-06-18
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the technique described in Patent Document 1 has a problem that dislocations due to thermal stress tend to occur in crystals due to cooling of single crystal silicon, resulting in poor productivity and yield.

Method used

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  • Method for growing silicon single crystal
  • Method for growing silicon single crystal
  • Method for growing silicon single crystal

Examples

Experimental program
Comparison scheme
Effect test

experiment example

[0118] In order to verify the present invention, the experiments shown below were carried out.

[0119] That is, using a crystal growth apparatus having a structure of 1 to 3 heating zones shown in Table 1 and below, argon or a mixed gas of argon and hydrogen was used as the atmosphere gas to perform defect-free crystallization with an outer diameter of 300 mm and a main body length of 1800 mm growth of single crystal silicon.

[0120] Table 1

[0121] Heating zone structure

Crystal side thermal stress (Mpa)

1

40

2

35.7

3

28

[0122] (heating zone structure 1)

[0123] Using the CZ furnace shown in Figure 8, set the cooling capacity of the water-cooling device 8 so that the size is 600 mm in inner diameter and 200 mm in height, and its bottom is 150 mm away from the surface of the molten liquid. At the same time, a horizontal magnetic field of 3000G is supplied by the magnetic field supply device 9,...

experiment example 1

[0144] Using a crystal growth device with the heating zone structure 1 shown in Table 1, using argon gas mixed with hydrogen with a molecular hydrogen partial pressure of 240Pa as the atmosphere gas for growing single crystals, under the operating conditions set by the above method , growing single crystal silicon as defect-free crystals.

experiment example 2

[0146] Using a crystal growth apparatus having a heating zone structure 3 shown in Table 1, argon gas was used as an atmosphere gas for growing a single crystal, and silicon single crystals were grown as defect-free crystals.

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Abstract

The invention relates to a method for growing single crystal silicon. Single crystal silicon is grown by the Czochralski method under the condition that the side of the growing single crystal silicon is subjected to thermal stress. The atmosphere gas for growing the single crystal is a mixed gas of an inert gas and a substance gas containing hydrogen atoms.

Description

technical field [0001] The present invention relates to a method for growing single-crystal silicon as a material of a silicon wafer, and in particular to a method for growing a single-crystal silicon without dislocations at a high yield, which can suppress dislocations caused by thermal stress. [0002] This application claims priority based on Japanese Patent Application No. 2005-179995 for which it applied on June 20, 2005, and uses the content here. Background technique [0003] A growth method using the Czochralski method (hereinafter referred to as the CZ method) is known as a method for producing single crystal silicon which is a material of a silicon wafer. Conventionally, in order to efficiently produce a silicon single crystal of desired quality by the CZ method, a technique for adjusting the temperature of a growing silicon single crystal has been known. For example, there is a technique of increasing the maximum pulling speed by rapidly cooling the vicinity of t...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B15/00
CPCC30B15/04C30B29/06C30B15/14C30B15/00H01L21/20
Inventor 稻见修一高濑伸光小暮康弘滨田建中村刚
Owner SUMCO CORP
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