Method for preparing two-dimensional material by stripping layered material with oxide semiconductor nano-powder

Abstract

The invention relates to a method for preparing a two-dimensional material by stripping a layered material with oxide semiconductor nano-powder. The method comprises the following steps: adsorbing p-type semiconductor nano-particles containing oxygen vacancies (oxygen holes) on the surface of the layered material while reactively adsorbing the semiconductor nano-particles on the surface of the layered material, and carrying out grinding in a grinder to realize inter-layer separation, carrying out stripping to prepare the two-dimensional material which is an intermediate film formed by compounding a single-layer or few-layer atom or molecular layer two-dimensional material and nanoparticles. and then separating the nanoparticles from the two-dimensional film to obtain the two-dimensional material. According to the technology, two types of practical products can be obtained, one type is an intermediate film formed by compounding a single-layer or few-layer atom or molecular layer two-dimensional material and nanoparticles; the other type is a two-dimensional material, and the two types of materials have wide and special applications.

Description

technical field [0001] The invention belongs to a method for preparing a two-dimensional material, and relates to a method for preparing a two-dimensional material by exfoliating a layered material from an oxide semiconductor nanopowder, involving the use of an oxide nanoparticle containing an oxygen-deficient p-type semiconductor, and a layered material Grinding and compounding to peel off the layered material to prepare a composite intermediate structure whose surface is covered with p-type oxide semiconductor nanoparticles and covered with a few-layer two-dimensional material surface, and then eluted with a salt solution to obtain a single-layer or few-layer Methods for 2D materials. The prepared two-dimensional materials and intermediate composite structures have potential applications in a wide range of fields, including electronic / optoelectronic devices, semiconductors, flexible electronics, electronic backgrounds and electronic displays, electrocatalytic reactions, batt...

AI Technical Summary

Problems solved by technology

Although many two-dimensional materials can also be prepared by chemical vapor deposition and small molecule synthesis, many two-dimensional materials, such as black phosphorus (b-P), black arsenic phosphide (b-As x P 1-x ), metal oxide MoO 3 , mica, TaS 2 , LDHs and TiS 2 etc., but cannot be prepared by chemical vapor deposition and small molecule synthesis, and can only be easily prepared by a top-down exfoliation method

Therefore, the top-down exfoliation method to obtain its two-dimensional structure is a more general method, but the existing exfoliation methods have randomness and process parameter fluctuations, which cannot guarantee that the exfoliated two-dimensional materials are all single layers, and the exfoliated two-dimensional Material layers are generally in the form of single-layer and multi-layer mixtures

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