41results about How to "Increase light output" patented technology

A light-emitting microcavity diode device includes a reflective electrode and a semi-transparent electrode, formed over a substrate, with an unpatterned light-emitting layer formed between the reflective electrode and the semi-transparent electrode. The reflective electrode, semi-transparent electrode, and unpatterned light-emitting layer form an optical cavity. Either the reflective or semi-transparent electrode is patterned to form independently-controllable, light-emitting sub-pixels. At least one, and fewer than all, of the sub-pixels emit light through a color filter. A first sub-pixel emits light having a first primary color and a second sub-pixel emits a complementary colored light. The light emitted from the first and second sub-pixels changes at one or more different angles. The color of the combined light of the first and second sub-pixels changes less at the one or more different angles than the light from at least one of the first or second sub-pixels. A third sub-pixel emits light through a color filter of a second primary color, different from the first primary color.

A multimode-fiber Raman laser includes a pump source configured to provide optical radiation centered at a pump wavelength and characterized by a spectral bandwidth greater than 100 MHz and an oscillator resonant at an emission wavelength greater than the pump wavelength. The oscillator includes an input coupler optically aligned with the pump source and a multimode optical fiber optically coupled to the input coupler. The multimode optical fiber includes an input section having a fiber Bragg grating, an intracavity section of a predetermined length optically coupled to the input section, and an output section having a fiber Bragg grating. The oscillator also includes an output coupler optically coupled to the multimode optical fiber and configured to provide a laser output at the emission wavelength.

The invention relates to a laser hybrid light source projector and a light source device thereof. The light source device comprises a blue LED light source, a red LED light source, a green LED light source, lens groups at the front ends of the light sources, a blue semiconductor laser tube, a lens group at the front end of the blue semiconductor laser tube, a spectroscope A and a spectroscope B; the surface of the green LED light source is provided with green fluorescent powder; the green LED light source is opposite to the semiconductor laser tube, the spectroscope B is located between the green LED light source and the semiconductor laser tube, the blue LED light source is arranged at one side of the spectroscope B, and the spectroscope A is arranged at the front of the red LED light source. The laser hybrid light source projector does not use the light source system of a laser projector with a color wheel, so that the influence of the color wheel on the picture quality is avoided; the blue semiconductor laser irradiates the fluorescent powder on the green LED, the brightness of the original green LED is obviously improved without increasing the numerical aperture of the light emitting area of the LED, and accordingly the output brightness of the projector is improved.

The invention relates to the laser field, in particular to a high-power semiconductor laser optical output module capable of being reused. The invention comprises a laser beam reshaping system, a focusing system, an upper ladder base and a lower ladder base. The upper ladder base and the lower ladder base are buttoned together through a respective upper end plane. The laser beam reshaping system is arranged on the steps of the upper ladder base and the lower ladder base. The focusing system is located in the emergent light direction outside the upper ladder base and the lower ladder base. The steps on the lower ladder base are staggered. The contact faces of the steps at different sides in the middle of the lower ladder base present a V shape. The whole step contact face presents V-shaped waves. The structures of the upper ladder base and the lower ladder base are the same. The invention can be reused, has no water cooling and small size and can realize high-power high-light output.

A solid state, laser light control device (20, 30) and material (10), and methods of producing same. The device (20, 30) and material (10) consist essentially of a host material (14) which contains: a dopant species (16) at a first valence state (a), the concentration of which increases with distance from the surface (18); and the same dopant species (16) at a second valence state (b), the concentration which decreases with distance from the surface (18). The method comprises the steps of: obtaining a doped solid state material (14); exposing the solid state material (14) to elevated temperature, for a period of time, in an oxidizing or reducing atmosphere. The elevated temperature and time of exposure are selected to change the valence state (a) of the dopant (16) in direct proportion to distance from the surface (18) of the solid state material (16). What is thereby produced is a solid state device (20, 30) in which the concentration of the dopant 16 at the second valence state (b) decreases with radius, the concentration of the dopant (16) at the first valence state (a) increases with radius, and the sum of these concentrations remains constant.

A spacer layer is formed on a single-crystal substrate and an epitaxially grown layer composed of a group III-V compound semiconductor layer containing a nitride or the like is further formed on the spacer layer. The epitaxially grown layer is adhered to a recipient substrate. The back surface of the single-crystal substrate is irradiated with a light beam such as a laser beam or a bright line spectrum from a mercury vapor lamp such that the epitaxially grown layer and the single-crystal substrate are separated from each other. Since the forbidden band of the spacer layer is smaller than that of the single-crystal substrate, it is possible to separate the thin semiconductor layer from the substrate by decomposing or fusing the spacer layer, while suppressing the occurrence of a crystal defect or a crack in the epitaxially grown layer.

Preparation of trivalancy cerium dosed flash crystals of rare earth silicates achieves by inducing strong reductive Si3N4 as raw material with equivalent weight equal to CeO2 to reduce it into Ce2O3 in heating procedure and growth of crystal, and to generate Ce3+ containing flash crystal, with few Ce4+ ions, of rare earth silicates by reacting with oxides such as SiO2 and Re2O3: Ce2xRe2(1 - x)SiO5, wherein, 0.0001% <= x <= 0.02%, Re = one or two of Gd, Lu and Y, so as to enhance light output of flash crystal.

A first device coupled with a first display and an image sensor receives output data from a second device having a second display different from the first display. The output data represents content displayable by the second device on the second display. The first device determines, using the image sensor, a position of the second display relative to the first device and causes the first display to display content based on the output data received from the second device and the determined position of the second display relative to the first device.

The invention discloses a light emitting diode encapsulating structure which comprises an LED support cup, an LED chip placed on the LED support cup, and a phase-change material arranged between the outside of the LED chip and the outside of a transparent encapsulating material and used for encapsulating protection of the LED support cup and the LED chip placed on the LED support cup, wherein the phase-change material is solid at normal temperatures and transparent liquid when the LED chip works stably. According to the light emitting diode encapsulating structure, the phase-change material covers the LED chip serving as a part of the encapsulating material directly, and heat generated when the LED chip works is absorbed by the phase-change material; due to the fact that the phase-change material can absorb a large amount of heat in the phase changing process and the thermal conductivity coefficient and thermal capacity of the phase-change material are higher than those of traditional silica gel and epoxy resin, the juncture temperature of an LED is lower than that when traditional encapsulating materials are used; meanwhile, due to the fact that liquid-phase phase-change material is almost transparent in a visible band and the refractive index is higher than that of traditional encapsulating materials, not only is the juncture temperature of the LED chip reduced, but also the light emitting efficiency of the LED is effectively improved.

The invention discloses a preparation method and a preparation device of an organic electroluminescence device and the organic electroluminescence device. The preparation method comprises steps of adjusting the optical grating period of a periodical optical grating structure so as to allow the wavelength of light waves coupled and emitted by an SP to be in a light emitting peak preset range of the organic electroluminescence device; and according to the obtained optical grating period, arranging the periodical optical grating structure in the organic electroluminescence device. By arranging the periodical optical grating structure in the organic electroluminescence device, the light waves are coupled to the SP, so it is achieved that photon energy lost at a metal electrode interface is taken back again through the regulation of the SPP, the light output of the organic electroluminescence device like an OLED is increased and the light emitting efficiency of the organic electroluminescence device like an OLED is improved.

The invention relates to a laser lighting component, in particular to a transmissive blue laser lighting component which is of multilayer structure and which comprises a light scattering layer, a baseplate and a light-emitting layer sequentially from bottom to top; the light scattering layer, the base plate and the light-emitting layer are connected in sintered manner; the light scattering layeris made with a glass material having microporous structure; the glass material with the microporous structure is made by mixing well low-melting-point glass powder and hollow alumina microspheres, adding a volatile material to obtain a slurry, and sintering; the base plate is made with alumina or zinc oxide or quartz with surface coating; one side of the base plate is coated with an antireflectivefilm with enhanced blue light transmission; the other side of the base plate is coated with an antireflective film with enhanced yellow light reflection; the light-emitting layer is made with a glassmaterial containing phosphor; the glassy light-emitting layer is made by mixing well the low-melting-point glass powder and phosphor, adding a volatile material to obtain a slurry, and sintering.

A glass-clad scintillation optical fiber and a preparation method thereof belong to the preparation and application of new scintillation optical fibers and relate to the field of preparation and application of scintillation materials. The outer cladding layer of the scintillation optical fiber prepared by the present invention adopts a low-content Si glass material, which effectively reduces the infiltration of Si atoms into the optical fiber core during the drawing process, and can simultaneously meet the requirements for drawing an optical fiber with a small size of tens of microns. The preparation method of the scintillation optical fiber of the present invention comprises the steps of prefabricated rod, optical fiber drawing and heat treatment. The scintillation optical fiber of the present invention has high optical performance, fast attenuation, high density and low cost, and can be applied to the fields of modern nuclear detection and medical space imaging equipment and the like.

The invention discloses a light-emitting diode chip and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light-emitting diode chip comprises a substrate, an n-type III-group nitride semiconductor layer, a active layer, a p-type III-group nitride semiconductor layer, a current spreading layer, an insulation passivation layer and a light extraction enhancement layer, the n-type III-group nitride semiconductor layer, the active layer, the p-type III-group nitride semiconductor layer, the current spreading layer and the insulation passivation layer are sequentially stacked on the substrate, a groove is formed in the p-type III-group nitride semiconductor layer and extends to the n-type III-group nitride semiconductor layer, a first electrode is arranged on the n-type III-group nitride semiconductor layer, a second electrode is arranged on the current spreading layer, the light extraction enhancement layer is arranged between the substrate and the n-type III-group nitride semiconductor layer and comprises a plurality of curved surface structures which are distributed in an array manner, the curved surface structures and the substrate integrally form a hollow structure, and the substrate, the curved surface structures and matters in the hollow structure are transparent. External quantum efficiency of the LED (light-emitting diode) chip is improved.

The invention describes a linear post-regulator (1) realized for use in an LED lighting arrangement (2), which linear post-regulator (1) comprises a control loop cascade (L1, L2, L3) realized for connection between a terminal of an LED lighting load (20) and a power converter (21) of the LED lighting arrangement (2); a transistor (Q) realized to regulate an LED current (ILED) through the LED lighting load (20); a first input (11) for connection to a reference current input (Iref); a second input (12) for connection to a performance parameter input (Vref, Δlref); and an output for connecting a power control output (Pctr) of the linear post-regulator (1) to the power converter (21); wherein the control loop cascade (L1, L2, L3) comprises at least two interconnected control loops (L1, L2, L3) to regulate the LED current (ILED) on the basis of the reference current input (Iref) and to regulate a further performance parameter of the LED lighting arrangement (2) on the basis of the performance parameter input (Vref, Δlref). The invention also describes an LED lighting arrangement (2), and a method of post-regulating the current of an LED lighting load (20) of an LED lighting arrangement (2).

A reflecting-type blue laser lighting assembly relates to the technical field of lighting. The lighting assembly has a multilayer structure and includes, successively from bottom to top, a luminescentlayer, a substrate, a light beam scattering layer, and a high-reflecting aluminum plate. The luminescent layer, the substrate, the light beam scattering layer and the high-reflecting aluminum plate are tightly connected in a sintering manner. The luminescent layer is a glassy state substance containing fluorescent powder. The substrate is alumina, zinc oxide or quartz, of which the surface is coated with a film. The light beam scattering layer is a glassy state substance having micropores, which is composed of low-melting point glass powder and hollow alumina. The ratio of thicknesses of thelight beam scattering layer, the substrate and the luminescent layer is (1:10:1) - (2:5:2). The wavelength range of the blue laser is 420 to 480 nm. The surface, coated with the light beam scatteringlayer slurry, of the substrate is placed above the high-reflecting aluminum plate.

A high intensity surface discharge pulsed light source system includes a dielectric substrate, a first electrode near the dielectric substrate, a second electrode spaced from the first electrode and near the dielectric substrate, with containment for a discharge gas. The system is electrically powered and cooled from a single end. The discharge volume is sealed from the environment for long operational life, and the surface material chosen to allow for high intensity operation. Reflective coatings are employed to increase the light available for practical use. A pulsed electric discharge circuit provides practical operation for long and safe operation.

The invention relates to a high power density COB (Chip On Board) packaged white LED (Light Emitting Diode) module and a packaging method thereof. A ceramic substrate is provided with a circuit layer and a box dam which is used for fixing packaging glue onto the substrate, and a packaging unit matrix for packaging LED chips is arranged on the circuit layer; the LED chips are arranged on the matrix; the LED chips are stuck to the substrate via nano-silver paste; and gold threads bonded to the chips are connected with an input electrode and an output electrode of a power supply. By adopting the single high power density LED chip and multi-chip integrated LED packaging method, the white LED module is high in light output, small in size and good in heat dissipation; and the high power COB module is used with accessories such as a shell, a base, a precision machining radiator, a high-grade reflector, a heat conducting plate, a support and the like to provide a 25W high power COB light source with high photoelectric conversion rate, long service life, energy conservation and environment friendliness.

The invention provides an electrode structure of an LED chip with a conductive substrate. The electrode structure comprises a conductive substrate, an N-type semi-conductor layer lapped on the conductive substrate, an emitting layer lapped on the N-type semi-conductor layer and a P-type semi-conductor layer lapped on the emitting layer, wherein the surface on the conductive substrate side of the chip and the surface on the side of the P-type semi-conductor layer are the light-emitting surfaces of the chip, and the other surfaces positioned on the side edges of the light-emitting surface are the side surfaces of the chip; a P-type electrode in electric contact with the P-type semi-conductor layer is arranged on each the side surface; an insulating layer is arranged between each of the P-type electrode and the side surface of the emitting layer, and between the P-type electrode and the side surface of the N-type semi-conductor layer. According to the electrode structure, since the electrodes are arranged on the side surfaces of the chip, the light-emitting area of the chip is enlarged, and brightness of the chip is improved.

The disclosure provides a two-piece LCD (liquid crystal display) projector based on a semi-field sequence display manner, including first and second black and white transmission type LCD light valve modules, wherein the first LCD light valve module alternatively displays red and blue field images, which are alternatively illuminated by a red light source and a blue right source, of input video signals; the alternative lightening and extinguishing period of the red light source and the blue right source is synchronous with the alternative field of the red and blue field of this LCD light valve; the second LCD light valve module is used to display the green field image, which is constantly illuminated by the green light source, of the input video signal; the light passing through the first and second LCD light valve modules are converged by a light converging device.

The invention discloses a stage lighting system which comprises a reflection bowl type light source and a bias compensation unit. The reflection bowl type light source is used for emitting a light beam. The bias compensation unit is used for refracting the light beam emitted by the reflection bowl type light source, and the compensation included angle between the direction of the light beam refracted by the bias compensation unit and the direction of the light beam emitted by the reflection bowl type light source is larger than 0 degree and smaller than 30 degrees. By implementing the invention, the bias compensation unit is arranged in the emitting direction of the reflection bowl type light source, and the position relationship between the bias compensation unit and the reflection bowl type light source is set, so that the direction of the light beam refracted by the bias compensation unit and the direction of the light beam emitted by the reflection bowl type light source form an included angle, therefore, most of reflected light emitted by the reflection bowl type light source and irradiated to the bias compensation unit deviates from a lamp wick of the light source, heat dissipation key parts of the light source such as a glass bulb body, a metal lead and a molybdenum sheet are avoided, the heat dissipation problem of the light source is effectively solved, damage to the light source is avoided, and the service life of the light source is prolonged.

A particular quantum cascade laser includes a ridge-guide. The ridge-guide includes an angled facet that extends across a width of the ridge-guide and a flat facet that extends across the width of the ridge-guide. A first distance between the flat facet and the angled facet along a first side of the ridge-guide is different than a second distance between the flat facet and the angled facet along a second side of the ridge-guide.

The invention provides an exciton light-emitting halide scintillator, a thin film, a single crystal, a preparation method and application. The exciton light-emitting halide scintillator has the following chemical formula: (A1-xAx') 5 (B1-yB'y) 3 (X1-zX'z) 8, wherein A and A'are respectively selected from one of Li, Na, K, Rb, Cs, In and Tl, and x is more than 0 and less than or equal to 1; B and B'are respectively selected from one of Cu, Ag and Au, and y is more than 0 and less than or equal to 1; and X and X' are respectively selected from one of F, Cl, Br and I, X and X 'are not the same element, and z is more than 0 and less than 1. The exciton light-emitting halide scintillator has the advantages of no deliquescence, high fluorescence quantum efficiency, high light output, low afterglow and the like, can be used for detecting X rays, gamma rays and neutrons, and has important application prospects in the fields of nuclear medicine imaging, security check, petroleum exploration wells, industrial detection and the like.

The invention discloses a pluggable energy-saving environmental-friendly light-emitting diode (LED) lamp tube, which comprises bayonet sockets (1), a lampshade (2) and an installation plate (3). The lampshade (2) is a transparent tubular lampshade. LED lamp beads (5) are installed on the installation plate (3). The bayonet sockets (1) are arranged on the outer wall of the lampshade (2). The installation plate (3) is arranged in the lampshade (2). The bayonet sockets (1) are electrically connected with the installation plate (3). A rectification module (4) is arranged on the installation plate (3). The input end of the rectification module (4) is electrically connected with the bayonet sockets (1). The pluggable energy-saving environmental-friendly LED lamp tube has the advantages that the structure is novel, the lamp tube is energy-saving and environmental-friendly, the lamp tube can be flexibly disassembled and assembled with a lamp bracket, the brightness of light which is seen from any angle is consistent, the luminous intensity is visually more even, the brightness output is improved, the situation of glaring because of different brightness is avoided and the lamp tube is visually more environmental-friendly and is healthier to the vision of people.

The invention provides a fluorescent lamp. The fluorescent lamp comprises a light-emitting tube made of quartz glass and having discharge gas including xenon packaged inside; a pair of electrodes formed on the length direction of the light-emitting tube and opposed through a dielectric medium; and an inner fluorescent body layer formed on the inner surface of the light-emitting tube. An opening part with no inner fluorescent body layer formed thereon is formed on a part on the circumferential direction of the light-emitting tube. The fluorescent lamp which can provide a fluorescent body layer which will not degrade can obtain a structure for stable light outputting. The fluorescent lamp is characterized in that an external tube is equipped in a way to cover the light-emitting tube; and an external fluorescent body layer is formed on the outer surface corresponding to the light-emitting tube and the opening part.

The invention discloses a low-thermal-resistance projection light source heat dissipation device which comprises an LED light source, a heat expansion piece, a pressing plate, a profile heat dissipation device and a heat dissipation fan. The LED light source, the heat expansion piece and the profile heat dissipation device are sequentially arranged in an attached mode. The pressing plate is attached to the heat expansion piece, and the pressing plate and the LED light source are located on the same side and staggered in position. And the cooling fan is arranged on one side of the profile radiator. Through the heat expansion sheet, the overall heat conduction speed of the sectional material radiator is obviously improved, so that the heat dissipation speed of the LED light source is improved, the wafer temperature of the LED light source is effectively reduced, and obvious positive effects are achieved on the aspects of prolonging the service life of the LED light source, improving the brightness output of a projector and the like. Meanwhile, the heat dissipation device still has the characteristics of durability and low cost of the radiator which is purely made of the sectional material, and the cost is slightly increased compared with that of the existing radiator which is purely made of the sectional material.

The invention discloses an LED chip and a manufacturing method thereof. According to the LED chip, blind holes are formed in the surface in the side far from the light emitting layer of a P type gallium nitride layer, the depth of the blind holes along the first direction is lower than the thickness of the P type gallium nitride layer, so that the P type gallium nitride layer absorbs less light emitted by the light emitting layer under the condition that the effective current conduction area of the P type gallium nitride layer, and the light output amount of the P type gallium nitride layer isimproved; and the sidewalls of the blind holes are set rough to increase the light output amount of the sidewalls of the blind holes, further the light output amount of the side far from the light emitting layer of the P type gallium nitride layer is increased, and the light emitting efficiency of the LED chip is improved.

Systems and methods are operable to increase brightness output from a display. An exemplary embodiment detects a predefined user action of a remote control, and then increases brightness of a currently presented image that is being presented on the display in response to detecting the predefined user action so that an ambient lighting level in the vicinity of the display is increased.