LED chip and manufacturing method thereof

A technology of LED chip and manufacturing method, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low luminous efficiency, and achieve the effects of improving luminous efficiency, increasing light output, and reducing absorption

Inactive Publication Date: 2019-10-25
XIAMEN CHANGELIGHT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the luminous efficien

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  • LED chip and manufacturing method thereof
  • LED chip and manufacturing method thereof
  • LED chip and manufacturing method thereof

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Embodiment Construction

[0045] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0046] In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do without violating the connotation of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.

[0047] As mentioned in the background art section, the luminous efficie...

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Abstract

The invention discloses an LED chip and a manufacturing method thereof. According to the LED chip, blind holes are formed in the surface in the side far from the light emitting layer of a P type gallium nitride layer, the depth of the blind holes along the first direction is lower than the thickness of the P type gallium nitride layer, so that the P type gallium nitride layer absorbs less light emitted by the light emitting layer under the condition that the effective current conduction area of the P type gallium nitride layer, and the light output amount of the P type gallium nitride layer isimproved; and the sidewalls of the blind holes are set rough to increase the light output amount of the sidewalls of the blind holes, further the light output amount of the side far from the light emitting layer of the P type gallium nitride layer is increased, and the light emitting efficiency of the LED chip is improved.

Description

technical field [0001] The present application relates to the technical field of LED chips, in particular to an LED chip and a manufacturing method thereof. Background technique [0002] LED is called the fourth-generation lighting source or green light source. It has the characteristics of energy saving, environmental protection, long life, and small size. It is widely used in various indications, displays, decorations, backlights, general lighting, and urban night scenes. However, the luminous efficiency of the existing LED chips is relatively low. Contents of the invention [0003] In order to solve the above technical problems, an embodiment of the present application provides an LED chip to improve the luminous efficiency of the LED chip. [0004] In order to solve the above problems, the embodiment of the present application provides the following technical solutions: [0005] A LED chip, comprising: [0006] Substrate; [0007] an N-type gallium nitride layer lo...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01L33/22H01L33/00
CPCH01L33/0075H01L33/20H01L33/22
Inventor 黄瑄李俊贤刘英策魏振东邬新根周弘毅
Owner XIAMEN CHANGELIGHT CO LTD
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