Preparation of divalent cerium ion dosed rare earth silicate scintillating crystal
A rare earth silicate, ionic rare earth technology, applied in crystal growth, chemical instruments and methods, single crystal growth and other directions, can solve the problems of crystal scintillation performance decline and unfavorable crystal growth, and achieve the effect of improving light output
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0033] Embodiment 1: prepare Ce 0.0002 Lu 1.9998 SiO 5 Rare earth silicate scintillation crystal
[0034] Concrete preparation steps are as follows:
[0035] Weigh the dried 0.9998mol Lu with a purity of 99.999% 2 o 3 , 0.99995mol SiO 2 , 0.0002mol CeO 2 and 0.000017 mol Si 3 N 4 Raw materials, a total of 1300g;
[0036] Fully mix the weighed raw materials into a uniform powder;
[0037] Mix the raw materials evenly, and press the mixed powder into φ78×10mm under the pressure of 1Gpa 3 The material cake is sintered at a temperature of 500°C for 15 hours to remove organic matter, water and low melting point impurities in the raw material;
[0038] Put the sintered block into φ80×50mm 3 In the iridium crucible, and put it into the pulling furnace, seal the furnace and evacuate to 5×10 -3 Pa; under this vacuum degree, the medium frequency induction heating method is used to heat up the chemical material at a heating rate of 400°C / hr;
[0039] When the material bl...
Embodiment 2
[0043] Embodiment 2: preparation Ce 0.04 Gd 1.96 SiO 5 Rare earth silicate scintillation crystal
[0044] Concrete preparation steps are as follows:
[0045] Weigh dry 0.98mol Gd with a purity of 99.999% 2 o 3 , 0.99mol SiO 2 , 0.02molCeO 2 and 0.0033mol Si 3 N 4 Raw materials, a total of 1300g;
[0046] Repeat process step and in the above-mentioned embodiment 1;
[0047] Continue to heat up to 1980°C at a heating rate of 400°C. / hr. After all the materials are melted, keep the temperature within this temperature range for 1.5 hours;
[0048] Slowly fill the furnace with N 2 gas, keep the pressure of the furnace at 1.25atm, and then at the crystallization temperature of 1900°C, use the b-axis Gd 2 SiO 5 The seed crystal is grown by the pulling method: the growth rate is 2.5mm / hr, and the crystal rotation speed is about 40RPM. After the crystal is seeded, diameter reduced, shouldered, equal diameter, terminated, and cooled, the crystal growth is completed. ...
Embodiment 3
[0050] Embodiment 3: preparation Ce 0.01 Y 1.99 SiO 5 Rare earth silicate scintillation crystal
[0051] Concrete preparation steps are as follows:
[0052] Weigh dry 0.995mol Gd with a purity of 99.999% 2 o 3 , 0.998mol SiO 2 , 0.05molCeO 2 and 0.00084mol Si 3 N 4 Raw materials, a total of 1300g;
[0053] Repeat process step and in the above-mentioned embodiment 1;
[0054] Continue to heat up to 2000°C at a heating rate of 400°C. / hr. After all the materials are melted, keep the temperature within this temperature range for 2 hours;
[0055] Slowly fill the furnace with Ar gas to keep the pressure of the furnace at 1 atm, and then at the crystallization temperature of 1980 ° C, use the b-axis Y 2 SiO 5 The seed crystal is grown by the pulling method. During the crystal growth process, the growth rate was 1 mm / hr, and the crystal rotation speed was about 25 RPM. After the crystal has undergone the procedures of seeding, diameter reduction, shouldering, equa...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com