Electrode structure of LED chip with conductive substrate

Abstract

The invention provides an electrode structure of an LED chip with a conductive substrate. The electrode structure comprises a conductive substrate, an N-type semi-conductor layer lapped on the conductive substrate, an emitting layer lapped on the N-type semi-conductor layer and a P-type semi-conductor layer lapped on the emitting layer, wherein the surface on the conductive substrate side of the chip and the surface on the side of the P-type semi-conductor layer are the light-emitting surfaces of the chip, and the other surfaces positioned on the side edges of the light-emitting surface are the side surfaces of the chip; a P-type electrode in electric contact with the P-type semi-conductor layer is arranged on each the side surface; an insulating layer is arranged between each of the P-type electrode and the side surface of the emitting layer, and between the P-type electrode and the side surface of the N-type semi-conductor layer. According to the electrode structure, since the electrodes are arranged on the side surfaces of the chip, the light-emitting area of the chip is enlarged, and brightness of the chip is improved.

Description

technical field [0001] The invention relates to an LED chip structure, in particular to a structure for electrode arrangement on the LED chip. Background technique [0002] According to the different conductive properties of the substrate, the existing LED chips are generally divided into non-conductive substrate chips and conductive substrate chips. Silicon substrates, silicon substrates and gallium nitride substrate chips, etc., are also called vertical structure chips or single-electrode chips. The P-type electrode of the front-mounted chip can be directly fabricated on the P-type semiconductor layer, but because the sapphire substrate carrying the N-type semiconductor layer does not have a conductive function, when making the N-type electrode, it is necessary to cut out some areas on the P-type semiconductor surface until the N-type semiconductor layer is exposed, and then make an N-type electrode on the exposed N-type semiconductor layer. Calculated on a chip with a s...

AI Technical Summary

Problems solved by technology

It can be seen that the existing LED chips need to make electrodes on the light-emitting surface, which shields the light-emitting area of ​​the chip to varying degrees, cannot fully utilize the entire light-emitting area of ​​the chip, and has low internal quantum efficiency.

At the same time, since a large amount of light is reflected back into the chip, the heat accumulation in the chip will also accelerate the attenuation speed of the chip and reduce the service life of the chip

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