Light-emitting diode chip and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems affecting the photoelectric conversion efficiency of LED chips, low external quantum efficiency of LED chips, and inability to emit light from LED chips, etc. Efficiency, high refractive index contrast, effect of reducing dislocations and defects

Active Publication Date: 2017-02-22
HC SEMITEK ZHEJIANG CO LTD
View PDF7 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Due to the existence of various optical losses, such as total reflection, part of the light generated inside the LED chip cannot be emitted, resulting in si

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting diode chip and manufacturing method thereof
  • Light-emitting diode chip and manufacturing method thereof
  • Light-emitting diode chip and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0036] Example 1

[0037] The embodiment of the present invention provides a light emitting diode chip, which is suitable for display screen, backlight source, white light illumination, etc., see figure 1 , the light-emitting diode chip includes a substrate 1, and an n-type group III nitride semiconductor layer 2, an active layer 3, a p-type group III nitride semiconductor layer 4, a current spreading layer 5, an insulating layer 5 sequentially stacked on the substrate 1 The passivation layer 6, the p-type group III nitride semiconductor layer 4 is provided with a groove extending to the n-type group III nitride semiconductor layer 2, the first electrode 7 is disposed on the n-type group III nitride semiconductor layer 2, the Two electrodes 8 are arranged on the transparent conductive layer 5 .

[0038] In this embodiment, the light-emitting diode chip further includes a light extraction enhancement layer disposed between the substrate 1 and the n-type III-nitride semiconduct...

Example Embodiment

[0056] Embodiment 2

[0057] An embodiment of the present invention provides a method for manufacturing a light-emitting diode chip, which is suitable for manufacturing the light-emitting diode chip provided in the first embodiment. See figure 2 , the manufacturing method includes:

[0058] Step 201 : forming a light extraction enhancement layer on the substrate.

[0059] In this embodiment, the light extraction enhancement layer includes a plurality of curved structures distributed in an array, the curved structures and the substrate form a hollow structure together, and the substrate, the curved structure, and the substances in the hollow structure are all transparent.

[0060] Alternatively, the substance within the hollow structure may be air.

[0061] Optionally, the material used for the curved structure can be Al 2 O 3 or AlN.

[0062] Alternatively, the substrate can be Al 2 O 3 crystal.

[0063] Optionally, see image 3 , the step 201 may include:

[0064] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a light-emitting diode chip and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light-emitting diode chip comprises a substrate, an n-type III-group nitride semiconductor layer, a active layer, a p-type III-group nitride semiconductor layer, a current spreading layer, an insulation passivation layer and a light extraction enhancement layer, the n-type III-group nitride semiconductor layer, the active layer, the p-type III-group nitride semiconductor layer, the current spreading layer and the insulation passivation layer are sequentially stacked on the substrate, a groove is formed in the p-type III-group nitride semiconductor layer and extends to the n-type III-group nitride semiconductor layer, a first electrode is arranged on the n-type III-group nitride semiconductor layer, a second electrode is arranged on the current spreading layer, the light extraction enhancement layer is arranged between the substrate and the n-type III-group nitride semiconductor layer and comprises a plurality of curved surface structures which are distributed in an array manner, the curved surface structures and the substrate integrally form a hollow structure, and the substrate, the curved surface structures and matters in the hollow structure are transparent. External quantum efficiency of the LED (light-emitting diode) chip is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode chip and a manufacturing method thereof. Background technique [0002] As a new generation of environmentally friendly solid-state light source, Light Emitting Diode (LED for short) has the advantages of long life, high reliability, small size, low power consumption, fast response, easy modulation and integration, etc. , lighting and other fields have been widely used. The emission wavelength of group III nitride-based LEDs covers the entire visible light band, and has become the focus of attention. [0003] The LED includes a substrate, and an n-type Group III nitride semiconductor layer stacked on the substrate in sequence, an active layer, a p-type Group III nitride semiconductor layer, and a transparent conductive layer. The p-type Group III nitride semiconductor layer is provided with Extending to the groove of the n-type Group III nitride sem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/20H01L33/00
CPCH01L33/007H01L33/20
Inventor 吴志浩杨春艳王江波刘榕
Owner HC SEMITEK ZHEJIANG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap