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Light-emitting diode chip and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems affecting the photoelectric conversion efficiency of LED chips, low external quantum efficiency of LED chips, and inability to emit light from LED chips, etc. Efficiency, high refractive index contrast, effect of reducing dislocations and defects

Active Publication Date: 2017-02-22
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Due to the existence of various optical losses, such as total reflection, part of the light generated inside the LED chip cannot be emitted, resulting in significant optical loss, which seriously affects the photoelectric conversion efficiency of the LED chip, and the external quantum efficiency of the LED chip is low

Method used

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  • Light-emitting diode chip and manufacturing method thereof
  • Light-emitting diode chip and manufacturing method thereof
  • Light-emitting diode chip and manufacturing method thereof

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Embodiment 1

[0037] An embodiment of the present invention provides a light-emitting diode chip, which is suitable for display screens, backlight sources, white light lighting, etc., see figure 1 The light-emitting diode chip includes a substrate 1, and an n-type group III nitride semiconductor layer 2, an active layer 3, a p-type group III nitride semiconductor layer 4, a current spreading layer 5, and an insulating layer stacked on the substrate 1 in sequence. In the passivation layer 6, the p-type group III nitride semiconductor layer 4 is provided with a groove extending to the n-type group III nitride semiconductor layer 2, the first electrode 7 is arranged on the n-type group III nitride semiconductor layer 2, and the second The two electrodes 8 are disposed on the transparent conductive layer 5 .

[0038] In this embodiment, the light-emitting diode chip further includes a light extraction enhancement layer disposed between the substrate 1 and the n-type Group III nitride semiconduc...

Embodiment 2

[0057] An embodiment of the present invention provides a method for manufacturing a light-emitting diode chip, which is suitable for manufacturing the light-emitting diode chip provided in Embodiment 1. Refer to figure 2 , the manufacturing method includes:

[0058] Step 201: forming a light extraction enhancement layer on a substrate.

[0059] In this embodiment, the light extraction enhancement layer includes a plurality of curved surface structures distributed in an array, and the curved surface structures together with the substrate form a hollow structure, and the substrate, curved surface structures, and substances in the hollow structure are all transparent.

[0060] Alternatively, the substance within the hollow structure may be air.

[0061] Optionally, the material used for the curved surface structure can be Al 2 o 3 Or AlN.

[0062] Alternatively, the substrate can be Al 2 o 3 crystals.

[0063] Optionally, see image 3 , the step 201 may include:

[0064...

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Abstract

The invention discloses a light-emitting diode chip and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light-emitting diode chip comprises a substrate, an n-type III-group nitride semiconductor layer, a active layer, a p-type III-group nitride semiconductor layer, a current spreading layer, an insulation passivation layer and a light extraction enhancement layer, the n-type III-group nitride semiconductor layer, the active layer, the p-type III-group nitride semiconductor layer, the current spreading layer and the insulation passivation layer are sequentially stacked on the substrate, a groove is formed in the p-type III-group nitride semiconductor layer and extends to the n-type III-group nitride semiconductor layer, a first electrode is arranged on the n-type III-group nitride semiconductor layer, a second electrode is arranged on the current spreading layer, the light extraction enhancement layer is arranged between the substrate and the n-type III-group nitride semiconductor layer and comprises a plurality of curved surface structures which are distributed in an array manner, the curved surface structures and the substrate integrally form a hollow structure, and the substrate, the curved surface structures and matters in the hollow structure are transparent. External quantum efficiency of the LED (light-emitting diode) chip is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode chip and a manufacturing method thereof. Background technique [0002] As a new generation of environmentally friendly solid-state light source, Light Emitting Diode (LED for short) has the advantages of long life, high reliability, small size, low power consumption, fast response, easy modulation and integration, etc. , lighting and other fields have been widely used. The emission wavelength of group III nitride-based LEDs covers the entire visible light band, and has become the focus of attention. [0003] The LED includes a substrate, and an n-type Group III nitride semiconductor layer stacked on the substrate in sequence, an active layer, a p-type Group III nitride semiconductor layer, and a transparent conductive layer. The p-type Group III nitride semiconductor layer is provided with Extending to the groove of the n-type Group III nitride sem...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01L33/00
CPCH01L33/007H01L33/20
Inventor 吴志浩杨春艳王江波刘榕
Owner HC SEMITEK ZHEJIANG CO LTD
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