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69results about How to "Increase output brightness" patented technology

Laser hybrid light source projector and light source device thereof

InactiveCN104122742AEliminate the influence of aperture effectEliminate natural enemiesProjectorsGreen ledLaser projector
The invention relates to a laser hybrid light source projector and a light source device thereof. The light source device comprises a blue LED light source, a red LED light source, a green LED light source, lens groups at the front ends of the light sources, a blue semiconductor laser tube, a lens group at the front end of the blue semiconductor laser tube, a spectroscope A and a spectroscope B; the surface of the green LED light source is provided with green fluorescent powder; the green LED light source is opposite to the semiconductor laser tube, the spectroscope B is located between the green LED light source and the semiconductor laser tube, the blue LED light source is arranged at one side of the spectroscope B, and the spectroscope A is arranged at the front of the red LED light source. The laser hybrid light source projector does not use the light source system of a laser projector with a color wheel, so that the influence of the color wheel on the picture quality is avoided; the blue semiconductor laser irradiates the fluorescent powder on the green LED, the brightness of the original green LED is obviously improved without increasing the numerical aperture of the light emitting area of the LED, and accordingly the output brightness of the projector is improved.
Owner:HANGZHOU JIN LI OPTOELECTRONICS TECH +1

Substrate-glaring SiC substrate vertical structure light-emitting tube and preparation method thereof

ActiveCN102064250AOvercome the shortcomings of non-conductivity and poor heat dissipationAvoid expensiveSemiconductor devicesLower limitSingle crystal substrate
The invention belongs to the technical field of semiconductor devices and preparation thereof, and relates to several GaN-based light-emitting tubes and preparation methods thereof. A device is composed of a substrate, an n type GaN buffer layer and a lower limit layer 2 epitaxially grown on the substrate, a GaN material multiple quantum well light-emitting layer 3, a p type GaN upper limit layer 4, a p type InxGa1-xN cover layer 5, an upper electrode 6 and a lower electrode 7. The light-emitting tube and the preparation method of the invention are characterized in that the upper electrode 6 is prepared to have a reflector function, a p type InyGa1-yN phase matching layer 8 is grown between the cover layer 5 and the upper electrode 6, the substrate 1 is an n type Sic single crystal substrate, a ZnO thin film layer 9 is prepared under the substrate 1 or a ZnO nanowire layer 11 is also prepared under the substrate 1, and the electrode 7 is prepared under the substrate 1 by only covering 5%-20% area. The invention provides a novel large-power SiC substrate vertical structure light-emitting tube and a preparation method thereof based on advantages that a SiC substrate crystal lattice and a GaN are well matched, electric conduction performance and heat conduction performance are both higher, and price is moderate.
Owner:HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO LTD

Step array high-voltage light-emitting diode and preparation method thereof

InactiveCN102130107AOvercome the disadvantages of complex preparation processIncrease output powerSolid-state devicesSemiconductor devicesEngineeringSoldering
The invention belongs to the technical field of semiconductor luminescent devices and preparation thereof, and particularly relates to a gallium nitride (GaN)-based array high-voltage light-emitting diode and a preparation method thereof. The light-emitting diode consists of a support substrate 1, soldering terminals 2 on the support substrate 1 and unit tube cores 3 on the soldering terminals 2,and is characterized in that the unit tube cores 3 have a vertical structure, an upper electrode 31 of each unit tube core is in a strip shape, and a lower electrode 32 is covered on the lower side of all the unit tube cores 3; the support substrate 1 has a step structure in the one-dimensional direction, and a metalized film 11 is arranged on each step; and the unit tube core 3 is formed on eachstep of the support substrate 1, the unit tube cores 3 are welded and fixed on the support substrate 1 by the soldering terminals 2, the lower electrode 32 of one unit tube core on the upper side is welded on the upper electrode 31 of the unit tube core on the lower side simultaneously, and a plurality of unit tube cores are welded in series to form the step array high-voltage light-emitting diode. By the step array high-voltage light-emitting diode, the defects that a face-up structure is poor in heat dissipation and a preparation process for bridge electrodes is complex are overcome, and the application range of the high-voltage light-emitting diode is expanded further.
Owner:JILIN UNIV +2

Composite spectrum synthesis device

InactiveCN105244752AReduce narrow line width requirementsReduced Line Width RequirementsLaser detailsManufacturing cost reductionDielectric
Provided in the invention is a technical scheme relating to a composite spectrum synthesis device. According to the technical scheme, the composite spectrum synthesis device comprises a laser sub beam emitter, a beam prism group, a polarizing beam splitter, multi-layer dielectric film gratings, and a polarizing beam combiner. A laser sub beam emitted by the laser sub beam emitter is arranged by the beam prism group and then is split into P light and S light by the polarizing beam splitter; spectrum synthesis is carried out on the P light and the S light respectively by the multi-layer dielectric film gratings arranged at light paths and then the P light and the S light are gathered at the polarizing beam combiner for outputting. According to the device, the two groups of multi-layer dielectric film grating spectrum synthesis units are used for realizing spectrum synthesis of the p polarizing light and s polarizing light and then the polarizing beam combiner is used for completing composite power synthesis, thereby realizing high-brightness laser outputting and overcoming defects that the high light source requirement can not be met and the grating can not be obtained easily according to the existing spectrum synthesis apparatus. Therefore, practicability of the spectrum synthesis device is improved and the manufacturing cost is lowered.
Owner:INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS

Semiconductor laser spectrum combining and frequency multiplication device

The present application provides a semiconductor laser spectrum combining and frequency multiplication device and relates to the field of laser devices. The semiconductor laser spectrum combining andfrequency multiplication device comprises a semiconductor laser, a conversion lens, a diffraction grating, a frequency multiplication crystal and an output coupling mirror which are arranged successively, wherein the semiconductor laser is located at the front focal plane of the conversion lens; the center of the diffraction grating coincides with the back focus of the conversion lens; the multiple parallel beams emitted by the semiconductor laser are focused to the diffraction grating by the conversion lens, and coupled by the diffraction grating into combined light to be output; the output coupling mirror reflects the fundamental-frequency light, and increases the permeability of the frequency-multiplied light. The combined light output by the diffraction grating is subjected to the frequency multiplication of the frequency multiplication crystal and is output by the output coupling mirror. The device achieves spectrum combining by the diffraction grating, increases output power andbrightness, and the power density and conversion efficiency of the laser in the frequency multiplication crystal, and reflects the fundamental-frequency light and increases the permeability of the frequency-multiplied light by the output coupling mirror to obtain high-power and high-efficiency frequency-multiplied laser output.
Owner:FUZHOU PHOTOP QPTICS CO LTD
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