Multi-single pipe light beam coupling type high-power semiconductor laser

A semiconductor and laser technology, applied in the field of high-power semiconductor lasers, can solve the problems of large current and voltage, complex adjustment, high cost, etc., achieve high power and brightness output, overcome the effect of complex structure and easy components

Inactive Publication Date: 2010-05-12
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

By integrating the semiconductor laser light-emitting unit into a one-dimensional line array (LD Bar) and a two-dimensional array (LD Stack) stacking multiple LD Bars, the output power of the semiconductor laser can be effectively improved, but due to the limitation of heat dissipation, the two Dimensional area arrays cannot be stacked unlimitedly on LD Bars. Due to poor beam quality, they cannot be coupled into optical fibers and still cannot meet the industrial needs for metal cutting, welding, etc.; a single tube can achieve more than 10W commercially, and multiple A single tube is coupled and finally coupled into the fiber output, which can meet high power requirements and achieve fiber output
As far as electric drive is concerned, the current and voltage of the power supply required by the linear array and stacked array semiconductor lasers are very large, the production is relatively complicated and the cost is high; the single-tube coupling can make the coupled modules into a series circuit, using low current and high voltage. Such laser light source is easier to make and the cost is much lower, because it is difficult to make a low-voltage high-current power supply. Now there are many ways to realize the 20-80 watt semiconductor fiber coupling module, mainly for the shaping coupling of the bar. Tube coupling is like the US nlight company using multiple single-tube ladder arrangements to realize the coupling of high-power semiconductor lasers. The coupling process is as follows: figure 2 As shown, five single semiconductor laser tubes 11 are arranged in a ladder shape in the axial direction, and each single semiconductor laser tube 11 is collimated by a set of fast and slow axis collimating lenses, and the fast axis collimating lens 13 adopts an aspheric cylindrical lens , the processing is not only difficult but also costly. The slow axis collimation of each single tube uses a set of cylindrical lenses 14, and all the collimated beams are finally focused and output by the ball lens
[0003] Although the device can couple 5 single tubes into the optical fiber to achieve high-power coupling, but in terms of structure, due to the arrangement in steps, the cost of device processing is very high
The number of lenses required for optical collimation of the fast and slow axes is large, and each single semiconductor laser tube must use a set of aspheric fast axis collimating lenses and a set of slow axis collimating lenses, so the more the number of coupling single tubes, the more the number of lenses required The more the more, the lower the efficiency, the higher the cost, and the adjustment is more complicated, because the lens is small and difficult to process

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  • Multi-single pipe light beam coupling type high-power semiconductor laser
  • Multi-single pipe light beam coupling type high-power semiconductor laser
  • Multi-single pipe light beam coupling type high-power semiconductor laser

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Embodiment Construction

[0011] The present invention will be described in further detail below in conjunction with the embodiment given with accompanying drawing.

[0012] refer to figure 1 , a multi-single-tube beam-coupled high-power semiconductor laser, is that 7 single-tube semiconductor lasers 1 with fast-axis collimating cylindrical lenses 2 are arranged in parallel in the same direction, along the number of single-tube semiconductor lasers. The optical path transmission direction of the laser 1 is successively provided with a cylindrical lens 3, a slow-axis collimating mirror 4 perpendicular to the normal line of the cylindrical lens 3, and an optical fiber 5 receiving its focused light beam; The fast axis of the beam of 1 is further compressed, and the slow axis collimator 4 collimates the slow axis and focuses the beam, and finally the beam is focused and coupled into the optical fiber 5 for output.

[0013] The cylindrical lens 3 is a spherical cylindrical lens.

[0014] The cylindrical ...

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Abstract

The invention relates to a high-power semiconductor laser, in particular to a multi-single pipe light beam coupling type high-power semiconductor laser. A plurality of single pipe semiconductor lasers, the emitting ends of which are provided with fast axis collimation cylindrical lenses, are arranged in parallel in the same direction; a cylindrical lens, a slow axis collimation lens perpendicular to a normal line of the cylindrical lens, and an optical fiber for receiving a focused light beam are sequentially arranged along the optical path transmission direction of the single pipe semiconductor lasers; the cylindrical lens further compresses the light beam fast axis of each single pipe semiconductor laser, and the slow axis collimation lens collimates the slow axis and focuses light beams; and finally, the light beams are output after focused and coupled into the optical fiber. The laser has simple structure and easy processing of elements, overcomes the defects existing in the prior art for manufacturing the high-power laser and is easy to realize higher power and luminance output.

Description

technical field [0001] The invention relates to a high-power semiconductor laser, in particular to a high-power laser realized by coupling outgoing beams of multiple single-tube semiconductor lasers. Background technique [0002] Compared with other types of lasers, semiconductor lasers (LD) have the advantages of small size, light weight, high efficiency, long life, and direct current modulation, so they are widely used in many fields such as industry, military, nuclear energy, and communications. The requirements for output power and brightness of semiconductor lasers are also getting higher and higher. By integrating the semiconductor laser light-emitting unit into a one-dimensional line array (LD Bar) and a two-dimensional array (LD Stack) stacking multiple LD Bars, the output power of the semiconductor laser can be effectively improved, but due to the limitation of heat dissipation, the two Dimensional area arrays cannot be stacked unlimitedly on LD Bars. Due to poor b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/40H01S5/06
Inventor 顾媛媛彭航宇王立军冯广智刘云
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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