22 results about "Polarization coupling" patented technology

The application discloses a high-isolation low-cross-polarization dual-linear-polarization microstrip antenna, belonging to the field of microwave radio frequency antennas, and containing a parasitic patch, a main radiation patch, an integrated differential feeding network and a metal cavity. The main radiation patch adopts four-point central symmetric differential feeding, and two groups of orthogonal feeding points are excited through a multilayer PCB built-in 3dB / 180° differential feeding network to cancel common-mode current and polarization coupling field from a radiation source. The main radiation patch and the bottom feeding network are physically separated by an independent non-contact metal ground layer to prevent direct current conduction coupling. A continuous metal ground isolation belt is arranged between the two groups of polarization feeding networks, and a dense array of metalized ground holes is arranged to form a virtual electric wall to block the coupling of the feed line and the horizontal propagation of the substrate surface wave. The antenna retains the low profile and miniaturization characteristics of the microstrip antenna, and has high isolation, low cross-polarization and wideband characteristics in the full frequency band. The structure is simple and easy to produce, and is suitable for wireless communication, radar and satellite communication scenes.

The invention provides a heterogeneous phototransistor based on double ferroelectric layers and a preparation method and application of the heterogeneous phototransistor, and belongs to the technical field of high-performance sensing and sensing, storage and calculation integration. The heterogeneous phototransistor comprises a bottom gate substrate, a bottom gate dielectric layer and a heterostructure which is sequentially stacked on the bottom gate dielectric layer, the heterostructure is composed of a ferroelectric semiconductor bismuth oxygen selenium layer, a bismuth selenite dielectric layer and a ferroelectric semiconductor alpha-phase indium selenide layer, and source and drain electrodes are arranged on the two sides of the ferroelectric semiconductor alpha-phase indium selenide layer. According to the invention, the directional sensitive response to linear polarized light is realized by utilizing the structural symmetry breaking characteristic of the ferroelectric semiconductors in the double-ferroelectric-layer structure, and meanwhile, through the polarization coupling effect between the two layers of ferroelectric semiconductors and the assistance of the middle bismuth oxyselenite dielectric layer for inhibiting electrostatic energy and blocking carrier migration, the linear polarized light can be effectively absorbed. And the polarization state is effectively stabilized, so that the device has remarkable non-volatile electrical characteristics. According to the invention, in-situ encryption of the optical information at the sensing end can be realized.

The invention discloses a diffraction optical waveguide device based on polarization coupling topological structure control, which comprises a waveguide medium, a coupling-in grating and a coupling-out grating, a plurality of non-grating areas are added in the coupling-out grating, and the plurality of non-grating areas divide the residual grating area of the coupling-out grating into a one-dimensional array structure or a two-dimensional array structure; the grating area is used for light diffraction coupling out, and the non-grating area is used for light total reflection; and the optical waveguide is used for realizing uniform distribution of brightness and colors in a full view field. According to the invention, the limitation of the efficiency distribution uniformity of the polarization holographic element is broken through, the coupling-out light energy regulation and control function can be realized on a single optical element while the high diffraction efficiency is maintained, and the advantages of high reliability, operability, low cost, rapidness and the like are realized.

The invention discloses an efficient and environment-friendly photovoltaic module recovery processing device and method, and belongs to the field of photovoltaic module recovery, and the efficient and environment-friendly photovoltaic module recovery processing method comprises the following steps: S1, disassembly and multi-stage dissociation; s2, carrying out temperature control pyrolysis and flow direction divergence; s3, quenching and tempering of gas phase branch-components; s4, carrying out solid phase branch-dielectric potential energy induction; s5, carrying out gas-solid coupling-chemical film formation and charging; s6, sound field orientation and pulse sorting; the problem of high energy consumption of a traditional pyrolysis process is solved, resource utilization of pyrolysis gas is realized, and a self-energized carrier is provided for a subsequent modification link; the problem that an existing modification process depends on external energy sources or chemical reagents is solved, and green modification is achieved through the mechanical force and dielectric polarization coupling effect. The problems that an existing technological process is dispersed and poor in synergism are solved, a closed-loop treatment system from disassembly, pyrolysis, modification to separation is built, the overall treatment efficiency is improved, and the recovery cost is reduced.

The ghost elimination method based on polarization-spectrum coupling of the ghost elimination method of the present application comprises a reflection layer, which reflects the radiation light of an imaged object and generates a ghost signal; a rotatable polarizer, the rotation angle theta is matched with the black phosphorus crystal axis direction of the black phosphorus spectrum polarization coupled infrared photodetector; the black phosphorus spectrum polarization coupled infrared photodetector is sequentially arranged from bottom to top as follows: SiO2 / Si substrate as an insulating support layer, graphene layer on the SiO2 / Si substrate, InSe thin film covering the graphene layer to form a type II heterojunction interface, black phosphorus layer on the InSe thin film as a core photosensitive layer, Cr / Au metal composite electrode deposited on the graphene layer and the black phosphorus layer respectively, the in-plane anisotropy ratio PER(lambda) of the black phosphorus layer changes with the wavelength, and the difference between the light response value I~alpha T 4 / PER(lambda) distinguishes the real signal from the ghost signal, and provides a miniaturized, self-driven ghost elimination system and method.

The invention discloses a reflective broadband energy amplification surface with polarization selectivity. The reflective broadband energy amplification surface comprises a plurality of energy amplification surface units which are periodically distributed, and each energy amplification surface unit comprises a first metal surface, a second metal surface, a third metal surface, a fourth metal surface and a fifth metal surface which are separated by dielectric substrates. The third metal surface adopts two rectangular metal patches which are distributed in an L shape; the fifth metal surface comprises a C-shaped microstrip transmission line, a feed microstrip line and a rectangular metal patch; an amplifier and two blocking capacitors are connected in series on the middle section of the C-shaped microstrip transmission line, and two arms are respectively connected with the two rectangular metal patches through via holes. The feed microstrip line is connected in series with an inductor and a resistor, and the amplifier, the resistor, the blocking capacitor and the inductor form a radio frequency amplification and bias filter circuit. According to the invention, by introducing an active amplification circuit and a polarization coupling mechanism, energy amplification and polarization regulation and control of in-band incident waves are realized.

This application provides a method for topology reconfiguration and model predictive control of solid-state transformers under extreme temperatures. The method includes: monitoring the instantaneous waveforms of power devices during topology reconfiguration; calculating the local temperature rise curve using a thermal network model based on finite metadata; determining the initial degree of change in the device polarization state based on the temperature rise; if the degree of change exceeds a limit, predicting and dynamically adjusting electrical characteristics by fusing temperature and polarization data through a neural network; estimating the millisecond-level peak temperature distribution by combining nonlinear feedback acceleration trends and electrothermal interaction mechanisms; outputting an alarm if the peak temperature exceeds a safety threshold, and fusing high-frequency topology data and polarization information to generate an optimized phase shift angle or frequency adjustment scheme. This invention solves the problem of local overheating caused by electrothermal polarization coupling effects during topology switching in solid-state transformers.

The invention discloses an edge perception-oriented learnable edge detection and dynamic refining system, which belongs to the crossing field of computer vision, deep learning and edge calculation, and comprises a learnable edge detection module (LED), a dynamic edge refining module (DER), a double-flow characteristic polarization coupler and a task perception distillation framework (TAWG), differential extraction, dynamic refining and efficient migration of edge features are cooperatively realized. The LED module converts Sobel gradient constraint into a parameterized convolution kernel to realize pixel-level response calibration; the DER module iteratively optimizes multi-scale features through a GRU unit and repairs edge fractures; the coupler realizes bidirectional enhancement of edge and focus features; the TAWG framework ensures the knowledge migration stability. The method is high in robustness, adapts to low-signal-to-noise-ratio scenes, is suitable for edge sensing scenes such as automatic driving, industrial quality inspection and medical image analysis, and can efficiently complete tasks such as road edge detection and target segmentation.

The invention discloses a mechanical transfer displacement response calculation method of a finite periodic chiral unit structure, which is used for efficiently solving a compression-torsion coupling response of a finite chiral structure and representing acoustic and optical branch polarization. The method comprises the following steps: constructing a chiral subunit dynamic model consisting of a disc and an inclined elastic rod piece, and establishing a longitudinal polarization and torsional polarization coupling relationship based on bending deformation and tension-compression deformation of the rod piece under the action of longitudinal or torsional simple harmonic load, the method comprises the following steps of: obtaining longitudinal and torsional deviation amplitude values of acoustic branches and optical branches of each disc under low frequency and high frequency, superposing the polarization of the two branches in generalized coordinates to form displacement and torsional description, calculating kinetic energy, bending potential energy and tension-compression potential energy according to the displacement and torsional description, and establishing a fluctuation control equation by adopting a Lagrange equation; and substituting the inertia matrix, the stiffness matrix, the force boundary condition and the displacement boundary condition to solve the transfer displacement response and the transfer characteristic. The method can separate and quantify two branch contributions, and is suitable for chiral phononic crystal vibration isolation and filtering structure design.

The invention discloses a multifunctional logic device based on double ferroelectric coupling interfaces and a preparation method thereof, the device comprises a silicon substrate layer and a TiN / Al < 1-x > ScxN / epsilon-Ga2O3 / TiN heterostructure on the silicon substrate layer, the TiN / Al < 1-x > ScxN / epsilon-Ga2O3 / TiN heterostructure comprises a TiN lower electrode layer, an epsilon-Ga2O3 ferroelectric film layer, an Al < 1-x > ScxN ferroelectric film layer and a TiN upper electrode layer which are sequentially stacked from bottom to top; according to the invention, epsilon-Ga2O3 is used as a lower ferroelectric material, Al1-xScxN is used as an upper ferroelectric material, a double ferroelectric heterostructure with polarization coupling characteristics is formed in a stacking mode, and the structure utilizes the ferroelectric response-like characteristic of epsilon-Ga2O3 and the strong spontaneous polarization capability of Al1-xScxN to realize the construction of a multi-polarization stable state in the same device, so that the performance of the device is improved. The method has the characteristics of non-volatility, polarization stability, logic multifunctionality and process compatibility.

The invention discloses a method for improving stress symmetry of a fiber-optic gyroscope interferometer, which is characterized by comprising the following steps: 1) processing a stress compensation module; 2) assembling a light source, an optical fiber coupler, a photoelectric detector and a Y waveguide; (3) one tail fiber of the optical fiber ring penetrates through the through hole of the stress block, and then epoxy resin is poured; 4) connecting the other tail fiber of the optical fiber ring with an extinction ratio tester; electrifying the light source; 5) tightening the adjusting bolt between the two pressing plates; 6) comparing extinction ratio values output by the extinction ratio tester before and after tightening the adjusting bolt; if the extinction ratio value is increased, continuously tightening the adjusting bolt; if the numerical value is reduced, the adjusting bolt is unscrewed; according to the method for assembling the fiber-optic gyroscope interferometer, the stress symmetry in the interferometer composed of the fiber ring and the Y waveguide can be improved, and the refractive index and the polarization coupling degree of the fiber can be kept relatively stable.

The invention discloses a polarization reconfigurable reflection enhancement metasurface and a method. A radiation antenna of a radiation unit and a back-loaded circuit are integrally designed into a three-dimensional integrated architecture; each radiation unit is specifically of a three-layer radiation metal sheet structure, an antenna radiation layer and a radio frequency amplification circuit layer are separated by a metal ground shared by the antenna radiation layer and the radio frequency amplification circuit layer, and a medium is filled between metal sheets; the first layer is an antenna radiation layer and is provided with a radiation patch; the second layer is a metal ground, is provided with a co-polarization coupling feed slot and a cross-polarization coupling feed slot, and is used for slot coupling feed; and the third layer is a radio frequency amplification circuit layer, is provided with a back-loaded circuit, and feeds the radiation patch of the first layer through electromagnetic coupling. According to the invention, switching of two states of co-polarization and cross-polarization reflection of the metasurface can be realized; the reflection amplitude of the metasurface can be enhanced, and the metasurface has the characteristic of low profile.

The invention discloses a dual-polarization pyramid horn antenna, and belongs to the technical field of microwave and millimeter wave antennas. The antenna adopts a six-layer integrated structure design, and comprises a radiation layer, a matching layer, a vertical polarization feed layer, a shielding layer, a horizontal polarization feed layer and a base from top to bottom. The radiation layer is integrated with a conical horn cavity and four orthogonally distributed polarized coupling waveguides; the center of the matching layer is provided with a multi-stage cylinder matching structure, and a strip line cavity surrounds the periphery; the vertical polarization feed network and the horizontal polarization feed network both adopt strip line power dividers and are arranged in a layered orthogonal mode, and coupling waveguides are excited through probes. Through the layered orthogonal feed network and the unique matching structure, the technical problems of low polarization isolation, difficult impedance matching, complex structure and the like of a broadband dual-polarized antenna are effectively solved, and the broadband dual-polarized antenna has the advantages of broadband, high isolation, low profile and compact structure, and is particularly suitable for scenes with high-performance requirements such as satellite communication and 5G millimeter waves.

The invention discloses a GaN field effect transistor with a ferroelectric polarization coupling field plate. The transistor comprises a GaN epitaxial structure, source electrode metal, drain electrode metal, a source-drain protection medium, grid electrode metal and the ferroelectric polarization coupling field plate, wherein the source electrode metal, the drain electrode metal, the source-drain protection medium and the grid electrode metal are prepared on the GaN epitaxial structure; the GaN epitaxial structure sequentially comprises a substrate, a nucleating layer, a high-resistance buffer layer, a channel layer and a barrier layer from bottom to top, the ferroelectric polarization coupling field plate is located between the gate metal and the drain metal and does not make contact with the gate metal and the drain metal, and the ferroelectric polarization coupling field plate can partially cover the gate metal after the passivation medium grows on the gate. And the ferroelectric polarization coupling field plate is made of a ferroelectric material and has a spontaneous polarization characteristic. Through the ferroelectric polarization coupling field plate characteristic of the ferroelectric material of the device, the electric field distribution in the GaN channel is regulated and controlled by using the induced electric field of the electric dipole, so that the parasitic and breakdown characteristics of the device are regulated and controlled.

The invention relates to the technical field of optical sensing fiber-optic gyroscopes, in particular to a fiber-optic gyroscope optical path spectral error analysis method based on OSA and OCDP fusion, which comprises the following steps: measuring a power spectral density function of a fiber-optic gyroscope light source and spectral transmission functions of a coupler and a Y waveguide; acquiring a polarization coupling intensity distribution curve; obtaining the optical path difference and the amplitude intensity ratio of a plurality of characteristic coupling points of the polarization coupling intensity distribution curve; sequentially multiplying the power spectral density function of the optical fiber gyroscope light source and the spectral transmission functions of the coupler and the Y waveguide to obtain an ideal normalized main spectrum; obtaining a full-optical-path spectrum of the fiber-optic gyroscope based on the ideal normalized main spectrum and the optical path difference and the amplitude-intensity ratio of the plurality of feature coupling points; analyzing based on the full-optical-path spectrum to obtain a physical defect position and error intensity; the error analysis accuracy of the fiber-optic gyroscope can be improved.

The application provides a miniaturized high-power-gain two-stage pulse compression energy multiplier, and belongs to the technical field of pulse compression energy multipliers.The energy multiplier comprises: a first-stage compression cavity input waveguide port for receiving a radio frequency signal; a first-stage compression cavity which is a first spherical cavity with a TE11n working mode and is used for performing first pulse compression on the radio frequency signal, and is fixedly connected with the first-stage compression cavity input waveguide port; a first-stage compression cavity 3dB orthogonal polarization coupler which is used for converting a TE10 mode in a rectangular waveguide into two orthogonal polarization TE11 modes in a circular waveguide, and is fixedly connected with the first-stage compression cavity through a coupling hole; and a second-stage compression cavity which is a second spherical cavity with a TE11n working mode and is used for performing second pulse compression on a signal output by the first-stage compression cavity.The conversion from a long microwave pulse with lower power to a high-power narrow pulse width microwave pulse is realized, and the output power gain is improved.

The invention relates to the technical field of photocatalytic materials, and discloses a Pr-doped MIL-101 (Cr) confined In cluster piezoelectric photocatalytic composite membrane and a preparation method and application thereof.The Pr-doped MIL-101 (Cr) confined In cluster piezoelectric photocatalytic composite membrane is characterized in that Pr-doped MIL-101 (Cr) serves as a porous framework, an indium precursor is confined in a pore channel through a double-solvent impregnation method, and In < 3 + > is reduced into a sub-nano In cluster through illumination; and then uniformly dispersing the In-coated Pr-MIL-101 (Cr) in a polyvinylidene fluoride-hexafluoropropylene solution, and carrying out electrostatic spinning, heat setting and polarization treatment to obtain the flexible piezoelectric composite film. The composite film has the MOF confinement effect and the polymer piezoelectric effect at the same time, under the illumination and mechanical polarization coupling effect, photo-induced electron-hole recombination can be effectively inhibited, electron directed migration is achieved, and then the CO2 photo-reduction efficiency and selectivity are improved.

This invention relates to the field of optical fiber geometric reconstruction technology, specifically to a one-dimensional reconstruction analysis method for optical fiber ring stress, comprising: reading and processing finite metadata of the optical fiber ring to obtain Cartesian coordinate system node information; converting the Cartesian coordinate system node information to the cylindrical coordinate system; determining the forward and reverse optical fiber paths to which each node belongs; calibrating the length of each node based on the optical fiber winding process parameters and the optical fiber path to obtain the one-dimensional unfolded length of each node; interpolating based on the one-dimensional unfolded length to obtain a discrete point stress value sequence; conducting an actual optical fiber ring experiment based on the finite metadata to obtain a polarization coupling curve; comparing the polarization coupling curve with the discrete point stress value sequence to obtain the one-dimensional reconstruction accuracy result; this invention can improve the accuracy of optical fiber ring stress analysis results along the optical path.

The application discloses a broadband / high-isolation / low-cross-polarization dual-polarization antenna array, which comprises five dielectric plates, both sides of each dielectric plate are provided with metal layers, the first metal layer and the second metal layer are provided with two microstrip line power dividers, and the microstrip lines at the ends of the two microstrip line power dividers are orthogonal; a cross-shaped coupling slot is arranged on the third metal layer, and the ends of the two microstrip line power dividers cross the cross-shaped coupling slot; an SIW cavity is arranged on the third dielectric plate, and each cross-shaped coupling slot is located in the SIW cavity; x-polarization coupling slots and y-polarization coupling slots that are orthogonal to each other are arranged on the fourth metal layer; a rectangular cavity and a direct-feeding metal through hole are arranged on the fourth dielectric plate; x-polarization feed lines and y-polarization feed lines that are orthogonal to the x-polarization feed lines are further arranged on the fifth metal layer; a rectangular cavity and a metal through hole are arranged on the fifth dielectric plate; and a cross-shaped microstrip line structure is arranged on the sixth metal layer. The application improves the isolation, reduces the cross polarization and has a very wide working bandwidth.

The application discloses to the technical field of power equipment fault diagnosis, and particularly relates to a kind of oil tank joint type transformer partial discharge electromagnetic wave signal coupling method, comprising: according to the polarization characteristics of electromagnetic wave line in oil tank joint, the main gain direction of line polarization coupling device is determined;According to the main gain direction, select the conical antenna as the conical coupling structure of line polarization coupling device;Coaxial output port of line polarization coupling device is constructed;Line polarization coupling device is installed in the outermost limit of oil tank joint type transformer square steel fracture and realizes coaxial feed, and the coupling of oil tank joint type transformer partial discharge electromagnetic wave signal is completed.The actual measurement results show that the sensitivity is 2-3 times of the traditional external sensor, the high sensitivity detection of transformer insulation state is realized, the basic structure of transformer does not need to be changed on a large scale, and it is suitable for transformers of various voltage levels that have been put into operation, and has important engineering application value for partial discharge detection of in-station transformer.

This invention provides a heterogeneous phototransistor based on a double ferroelectric layer, its fabrication method, and its applications, belonging to the field of high-performance sensing and integrated sensing-memory-computing technology. The heterogeneous phototransistor includes a bottom gate substrate, a bottom gate dielectric layer, and a heterostructure stacked thereon. The heterostructure consists of a ferroelectric semiconductor bismuth oxide selenide layer, a bismuth selenite oxide dielectric layer, and a ferroelectric semiconductor α-phase indium selenide layer. Source and drain electrodes are provided on both sides of the ferroelectric semiconductor α-phase indium selenide layer. This invention utilizes the structural symmetry breaking characteristic of the ferroelectric semiconductor in the double ferroelectric layer structure to achieve a direction-sensitive response to linearly polarized light. Simultaneously, through the polarization coupling between the two ferroelectric semiconductor layers, supplemented by the suppression of electrostatic energy and the blocking of carrier migration by the intermediate bismuth selenite oxide dielectric layer, the polarization state is effectively stabilized, giving the device significant non-volatile electrical characteristics. This invention can achieve in-situ encryption of optical information at the sensing end.

The application discloses a dual-polarized phased array antenna capable of simultaneously improving homopolar and heteropolar coupling, comprising a plurality of antenna units distributed in two polarization directions, adjacent antenna units are in L-shaped positional relationship, and a cross-shaped structure is formed by four adjacent antenna units; each antenna unit comprises a dipole antenna, a decoupling surface and a metal cavity, the decoupling surface is suspended above the dipole antenna, and the dipole antenna is located in the metal cavity; the dipole antenna comprises a first dielectric substrate, a second dielectric substrate and a third dielectric substrate which are sequentially stacked, and a first dipole arm, a first traveling wave guide, a third dipole arm, a metal conductor strip, a second dipole arm, a second traveling wave guide, a first metal surface, a second metal surface and a ground coplanar waveguide transition substrate integrated coaxial line. The application effectively improves the coupling between homopolar and heteropolar dipoles, has an impedance bandwidth of 31.9%, the isolation degree is better than 20 dB within the working bandwidth, and the beam scanning angle range reaches ± 40°.