67results about How to "Improve optical power density" patented technology

The invention provides a photo-curing three-dimensional printing method and printing device based on projection. The printing method comprises the following steps: a projection system scans, prints and cures layer by layer under the control of a control system; when each layer is printed, the whole pattern needing to be printed on each layer is completed by linearly moving a projection breadth obtained by the projection system in a horizontal plane, and the projection breadth horizontally and linearly moves according to a preset route; during moving, the control system obtains the coordinate position of an area projected by the projection breadth in real time and controls a local pattern, corresponding to the coordinate position, projected by the projection system, and the printing and curing of the local pattern are completed. The projection breadth obtained by the projection system linearly moves in a horizontal plane, namely mobile projection. The large-breadth photo-curing three-dimensional printing can be realized, the printing precision and high efficiency of a projector are ensured, and the printing precision of the whole product is improved.

The invention relates to a high-brightness excitation method and a light emitting device based on optical wavelength conversion. The method comprises the following steps: two surfaces of lamellar-distributed optical wavelength conversion materials respectively receive the excitation of first excitation light and second excitation light at two sides of the optical wavelength conversion materials, and excited light is generated; the first excitation light is the excitation light which is emitted by a solid light emitting chip array which is composed of a solid light emitting chip or a pluralityof solid light emitting chips; the second excitation light is guided by a first light splitting and filtering device which is positioned at the other side of the optical wavelength conversion materials and is emitted in the optical wavelength conversion materials; and the excited light is guided by the first light splitting and filtering device and is split into outgoing light from the light pathof the second excitation light. The two surfaces of the optical conversion materials are excited simultaneously, the excitation light and the excited light are guided by adopting the corresponding light splitting and filtering device, the heat radiation issue is solved through tightly clinging a transparent heat conduction substrate or an LED (light emitting diode) chip to the optical wavelength conversion materials, and the high-brightness high-power light output of the light emitting device is realized.

The invention relates to an NPN-structure-based laser photovoltaic cell and a preparation process thereof. The photovoltaic cell comprises an N type GaAs conducting layer, a tunneling junction and a GaAs cell which are sequentially grown on a semi-insulating GaAs substrate, wherein the GaAs cell comprises a P / N junction and an N type window layer which are sequentially distributed in the direction gradually far away from the substrate. The preparation process comprises the following steps of: sequentially growing the N type conducting layer, the tunneling junction, the P / N junction, the N type window layer and an N type contact layer on the semi-insulating substrate by an epitaxial growing method to form a photovoltaic cell base body; and processing on the photovoltaic cell base body to form an isolating groove, a positive electrode, a negative electrode, an antireflection layer and an electrode lead to form the target product. The photovoltaic cell is low in series resistance, high in output voltage and high in light absorption and light conversion efficiency, can widely serve as a high-efficiency laser photovoltaic cell and is easy and convenient to prepare. The processing time of a device can be effectively saved; the cost is reduced; and the requirement of mass production is met.

The invention discloses a piece of parallel light curing equipment with staggered area array light sources. The parallel light curing equipment comprises a conveying device, an area array light source curing device, a cooling device, a light source control device and a working table, wherein the cooling device is connected with the area array light source curing device, the light source control device is connected with the area array light source curing device, and the area array light source curing device is installed on the working table. The working table comprises a trolley. The trolley is movably arranged inside the working table. A longitudinal guiding rail and a guiding rail driving mechanism are arranged at the upper portion of the trolley. The area array light source curing device is arranged on the guiding rail of the trolley. The conveying device fixes a workpiece to be cured in a vacuumized mode and conveys the workpiece to be cured to the portion over the area array light source curing device or the portion under the area array light source curing device. The invention further discloses a curing method by utilizing the curing equipment. According to the parallel light curing equipment with the staggered area array light sources and the curing method, due to the fact that the staggered movements of the area array light sources and the workpiece are controlled, the evenness of curing is improved, and due to the fact that a condensing lens converts UV light beams into parallel light, the curing efficiency and precision are improved.

The invention relates to a semiconductor laser multi-chip sintering clamp and a sintering method. The sintering clamp comprises a main body, a lower pressing bar, an upper pressing bar, top blocks with pressing columns and springs. The lower pressing bar and the upper pressing bar are fixed on the main body through fixing screws; the lower pressing bar and the upper pressing bar are provided with holes which are evenly distributed and are used for limiting the top block pressing columns and feeding screws; a spring sleeves the top block pressing column; the bottom of the main body is provided with laser limitation grooves. The sintering method comprises steps of successively placing the tube casings containing heat sinks and COSs in the laser limitation grooves and the positions below the top block pressing columns, transmitting to feeding screws to enable the pressing columns to descend to the bottom and to contact with the COSs, clamping the chip by applying pressure, and performing sintering on the clamp, on which the laser is installed. The pressing column of the invention is of a square structure and maintains no rotation during the pressing down, preventing the displacement of the COS in the installation process and improving the consistency of sintering. At the meantime, the clamp is provided with a plurality of lasers according to the needs, which is high in sintering and easy to industrialization.

The invention relates to a method and laser device for producing a high optical power density by forming laser bars (LB) of diode lasers (E) in a manner that in a single laser bar (LB) the slow axes (x) of adjacent diode lasers (E) are positioned relative to each other in the same line and said diode lasers (E) emit substantially to the same direction (z), and radiation emitted by said plurality of laser bar (LB) is further collected to a combined and bright beam that is parallel with the optical axis (A). In accordance with the invention the laser bars (LB) are arranged in sectors relative to the optical axis (A) to an axial symmetrical structure in a manner that the direction of beams leaving from different sectors is turned (DE) in order to combine said beams. Preferred embodiments of the invention enable combination of efficient sector-by-sector radiation of laser bars (LB) using spatial, polarisation and / or wavelength multiplexing.

A method for producing high optical power density. Laser beams emitted from a plurality of laser bars are combined by spatial multiplexing to become substantially parallel with an optical axis. Each single laser bar includes one or more diode lasers. The slow axes of adjacent diode lasers of the single laser bar are substantially parallel with each other and the adjacent diode lasers emitting substantially to the same direction. The laser bars are arranged in two or more sectors around the optical axis. The width of the effective light-emitting near-field of at least one of the laser bars is less than 2.5 millimeters in the direction of the slow axis of the diode lasers of the at least one laser bar.

The present invention relates to a high-efficiency laser frequency multiplier device. It includes basic frequency laser, light-beam beam splitter, coherent beam synthesizer and non-linear crystal. After the basic frequency laser is undergone the process of beam-splitting treatment, the coherent synthesis can be implemented, then the synthesized laser can be used as pump source of frequency multiplication laser to pump non-linear optical crystal finally can output multiple frequency laser with high conversion efficiency.

The invention provides an LED light source module with the highlight power density. The LED light source module comprises a substrate, a plurality of LED light-emitting chips, a remote fluorescent powder layer and a heat sink. The middle of the substrate is provided with a groove. The LED light-emitting chips are arranged in the groove in the substrate to form an LED light-emitting chip array, the remote fluorescent powder layer is arranged above the groove in the substrate, the heat sink is a groove body and fixed to the position below the substrate, a sealed cavity is formed between the heat sink and the substrate, and the cavity is filled with phase change heat dissipation liquid used for dissipating the heat of the LED light-emitting chips. The LED light source module is high in output light power, small in light spot area, even in light spot brightness and long in service life.

The invention discloses a multi-wavelength high-power semiconductor laser array coupling system and a preparation method thereof. The multi-wavelength high-power semiconductor laser coupling system comprises a semiconductor laser polarization beam combination module, a filtering module and a focusing lens, wherein the semiconductor array polarization beam combination module is arranged at the front end of the filtering module; and the focusing lens is arranged at the rear end of the filtering module. The multi-wavelength high-power semiconductor laser array coupling system adopts the unique fiber coupling technology, can realize multi-wavelength high-power output, and has high optical power density; and at the same time, the shape and size of the light spot are controllable.

The invention provides a silicon substrate deep ultraviolet light emitting diode epitaxial chip structure and a preparation method therefor. According to the epitaxial structure of the silicon substrate deep ultraviolet light emitting diode, an AlN buffer layer, an AlxGa1-xN buffer layer, a non-doped AlyGa1-yN layer, an n type AlzGa1-zN layer, a multiple-quantum-well AluGa1-uN / AlvGa1-vN layer, a p type AlwGa1-wN layer, a P type AlmGa1-mN layer and a p type GaN contact layer are growing on the silicon substrate from the bottom up in sequence, wherein the value ranges of x, y, z, u, v and m are all from 0.01 to 0.99, and the value range of w is from 0.2 to 0.99. A thin film deep ultraviolet light emitting diode with a perpendicular structure can be prepared based on the epitaxial structure; and due to the chip structure, the extraction efficiency of the deep ultraviolet light emitting diode can be greatly improved, the axial optical output can be improved, and the optical power density can be enhanced.

The invention discloses laser cutting equipment for stents. The laser cutting equipment comprises a laser cuing head, a Z-axis, a servo motor and a laser transmission light path structure, wherein the laser transmission light path structure comprises a lighting source and an optical fiber laser which are arranged on one side of the axis of the laser cutting head, a 450 reflecting mirror arranged on the axis of the laser cutting head, a focusing mirror arranged below the 450 reflecting mirror, and a protective mirror arranged below the focusing mirror, wherein a reflecting mirror cover plate is arranged above the 450 reflecting mirror. The laser cutting equipment for the stents, which is disclosed by the invention, has the advantages that the optical fiber laser is adopted, and multiple optical elements are used, so the laser power and the power density are greatly improved; the damage of return light to the laser is inhibited by the design of the laser transmission light path structure; and meanwhile, the whole machining process has traceability and a full life cycle management demand of the stents is satisfied.

The invention relates to the hemispherical and spherical two-photon response semiconductor photodetector for the ultrashort optical pulse measurement system, the optoelectronic integrated system and the optical communication system. The hemispherical two-photon response semiconductor photodetector comprises the semiconductor hemisphere (1), the metal electrode pairs (2, 2') and the micro lens (3), and its features are: the radius of the semiconductor hemisphere (1) is less than the work distance of the micro lens (3), and the sphere center of the semiconductor hemisphere (1) locates in the focus of the micro lens (3), and the metal electrode pairs (2, 2') locates in the plane of the semiconductor hemisphere (1), and the incident parallel light (4) passes the focus of the micro lens (3), incident vertical to the spherical surface of the semiconductor hemisphere (1), and going ahead along the radius direction, and finally the focus of the focused beam falls at the spherical center, and imposing the DC voltage to the metal electrode pairs (2, 2'), by the measurement of the optical current, to achieve a relative measurement of the incident light power.

Provided is a high-power semiconductor laser based on VCSEL, comprising a VCSEL laser module. The VCSEL laser module includes a VCSEL chip array (1) consisting of a plurality of VCSEL chips (10) and an inner wall reflection optical transmission device (2) which is arranged in front of a light emergent face of the VCSEL chip array (1); and the light emergent face of the VCSEL chip array (1) is used for secondarily reflecting the reflected light reflected by a target object (3) and the inner wall reflection optical transmission device (2). Also provided is a packaging structure for the high-power semiconductor laser. The VCSEL chip array (1) is packaged by an inwardly concave arc-shaped heat sink (4), so that the purpose of converging the laser light beam near a centre position can be achieved.

The invention relates to the field of optical devices for hardening rails, in particular to an optical device for hardening the steel rail by using high-power semiconductor laser in running of a train. The optical device comprises semiconductor laser diode stacks, a polarization coupling prism, a wavelength coupling prism, a planar reflector, a symmetric ladder lens, a light beam compression lens, a slow-axis collimating lens, an optical working lens assembly and a laser head, wherein through the plurality of semiconductor laser diode stacks with fast-axis collimating lens, the light is coupled into a beam of light and output by using a wavelength coupling principle and a polarization coupling principle. The laser beam is led into the laser head so as to obtain ideal light spots required for hardening the steel rail by laser through light path design of a complete optical system. The device has the advantages of high energy utilization ratio, compact structure, convenient carrying and field application, high controllability, easy operation, low operation and maintenance cost, long service life, uniform energy distribution of light beam, no need of measures such as phosphorization, blackening and the like of the surface of the steel rail and capability of preventing negative effect brought by spraying an absorption layer.

The invention discloses a device and a method which are used for detecting sweat latent fingerprints on large breadth material to be detected. The device comprises a deep ultra-violet laser light source module, a dichronic mirror, a laser scanning optical conversion module, a two dimensional electric sample platform, a fluorescence detection module, and a control system. The device and the methodis capable of realizing preferable excitation of sweat latent fingerprint excited intrinsic fluorescence at 365nm, and increasing sweat latent fingerprint detection rate, and can be used for materialswith larger breadth; and the detection resolution can be changed based on need.

The invention relates to a laser light source, in particular to an integrated laser light source, and solves the technical problems that a current laser is difficult to implement a high-power output, the simple array arrangement can cause poor heat dissipation, output laser usually contains speckles and the optical power density is insufficiently high. The integrated laser light source comprises a reflection reactor optical coupling device and a laser transmitter system matched with the reflection reactor optical coupling device; the reflection reactor optical coupling device comprises a plurality of layers of reflective arrays which are axially arranged along a principal optic axis; and each reflective array comprises a plurality of reflecting surfaces arranged around the principal optic axis and a center reflecting surface positioned on the principal optic axis. The invention solves the problems of low optical power, low optical power density, poor heat dissipation, serious speckles and the like of a conventional high-power laser light source by the ingenious space arrangement of the reflecting surfaces and a laser transmitter; the outstanding technical effects are obtained; and the integrated laser light source is low in cost and easy to produce and operate.

The invention discloses a miniature ridge waveguide laser, a minitype laser and a preparation method thereof. The miniature ridge waveguide laser and the minitype laser provided by the invention use ridge optical waveguide as gain medium of the laser; the volume of a laser resonant cavity can be reduced; the optical power density in the resonant cavity is improved, so that the stable waveguide laser output can be realized; films are plated at two ends of the waveguide; the use of a lens and reflector is avoided; the number of devices required by the laser is reduced; the size and the cost of the laser are greatly reduced; the integration degree and the stability of the laser system are improved; a soft proton exchange method is used for preparing the miniature ridge waveguide laser; the damage to crystal lattices in crystals is reduced; the laser frequency conversion efficiency is improved; the soft proton exchange temperature is increased to 300 DEG C; on the premise of enabling the crystal phases not to be damaged, the proton exchange and the annealing processes are competed in one step; the preparation process is simplified; the preparation time is shortened.

The invention discloses a microchip ridge waveguide laser, a tunable laser and a preparation method of the microchip ridge waveguide laser. According to the microchip ridge waveguide laser, by takinga ridge-shaped optical waveguide as a gain medium of the laser, the volume of a laser resonant cavity can be reduced, and the optical power density in the laser resonant cavity can be increased, so that the stable waveguide output can be realized; a traditional piezoelectric ceramic control manner is replaced with a temperature control manner, so that the disadvantage that a microchip is easily damaged through pressure control is overcome, and the microchip ridge waveguide laser has the advantages of high reliability and large wavelength turning range; the microchip ridge waveguide laser is prepared by virtue of a soft proton exchange method, so that the damage caused to lattices in crystals is reduced, and the laser frequency conversion efficiency is improved; and the microchip is prepared from waveguide, and two ends of the microchip are coated with films, so that a lens and a reflection mirror are not used, the numbers of components and parts required by the laser are reduced, the size and cost of the laser are greatly lowered, and the integration level and stability of a laser system can be improved.

The invention discloses a particle counter sensor light beam homogenizing and sharpening illumination system. The system comprises a semiconductor laser, and a first aspheric mirror, a micro lens array scattering sheet, a second aspheric mirror, a circular hole diaphragm, a cylindrical mirror and a rectangular hole diaphragm are sequentially arranged in the light beam emitting direction of the semiconductor laser; an air inlet nozzle and an air outlet nozzle are arranged perpendicular to the light beam emitting direction, sampling airflow flows in from the air inlet nozzle of the sensor cavityand flows out from the air outlet nozzle, and a photosensitive area is formed in the intersection and overlapping area of the sampling airflow and light beams. According to the optical illumination system, the light beams are sharpened and homogenized, so that the light beams in the photosensitive area are uniformly distributed and narrowed, and the optical background noise in a scattered light collection cavity is reduced through the combined diaphragms, so that the optical illumination system has the characteristics of small size, easiness in adjustment, high particle size measurement accuracy, high resolution, high signal-to-noise ratio and high sensitivity.

The invention discloses a flat plate type laser and a method for improving optical power density, and the flat plate type laser comprises a laser bottom plate, the laser bottom plate is provided witha laser chip, and the laser chip is sequentially provided with a fast axis collimating lens, a slow axis collimating lens and a reflector in the optical path direction; for the multi-beam flat plate type laser, the scheme can obviously balance the angle of the laser beam entering the optical fiber in the fast and slow axis direction, and after a single-row reflector is changed into a double-row reflector, the height of the beam is almost reduced to half of the height of the original beam so that the finally formed near-field light spot is closer to a square; therefore, the utilization rate ofthe focusing lens can be greatly improved, the light beam density is improved, the scheme is simple and easy to operate, the size of the laser can be reduced to a greater extent, and the unit power size of the laser is reduced.

The invention discloses a multi-wavelength high-power semiconductor laser array coupling system and a preparation method thereof. The multi-wavelength high-power semiconductor laser coupling system comprises a semiconductor laser polarization beam combination module, a filtering module and a focusing lens, wherein the semiconductor array polarization beam combination module is arranged at the front end of the filtering module; and the focusing lens is arranged at the rear end of the filtering module. The multi-wavelength high-power semiconductor laser array coupling system adopts the unique fiber coupling technology, can realize multi-wavelength high-power output, and has high optical power density; and at the same time, the shape and size of the light spot are controllable.

The invention discloses a multi-line interference Rayleigh scattering speed measuring device for a flow field. The device comprises a laser, a multi-line laser probe and flow field interaction unit, a multi-line forward scattered light collection unit, a reference unit and a detection unit; the multi-line laser probe and flow field interaction unit comprises a half-wave plate, a cylindrical focusing lens and a cylindrical microlens array arranged in sequence along the exit light path of the laser; the detection area of a multi-line laser probe is formed on the exit light path of the laser and approaches the focus of the cylindrical focusing lens, the flow field to be measured flows through the detection area, and the direction of the flow field inclines to the exit direction of the laser; the multi-line forward scattered light collection unit is a lens set inclining to the direction of the flow field; the reference unit comprises an incident beam splitter, a reflector and an exit beam splitter; and the detection unit comprises a Fabry-Perot etalon and an ICCD (Intensified Charge Coupled Device) camera arranged along a scattering light path. The device obtains the transient two-dimensional speed of the flow field by measuring the Doppler shift of multi-line forward scattered light, and is suitable for flow speed diagnosis of multiple flow fields.

The invention discloses a super-continuum spectrum laser light source, belongs to the technical field of laser devices, and solves the problem of low laser output conversion efficiency of an existingultra-wideband super-continuum spectrum laser light source. The super-continuum spectrum laser light source comprises: a laser pumping source; a lens group which is arranged on the emergent light pathof the laser pumping source and is used for collimating and focusing the emergent light of the laser pumping source; and a thin-film waveguide device which is arranged on an emergent light path of the lens group, wherein light entering the thin-film waveguide device can be emitted out after a nonlinear effect occurs in the thin-film waveguide device, the thin-film waveguide device comprises a polarized crystal, and the polarized crystal is of a chirped domain structure. The super-continuum spectrum laser light source is used for generating the super-continuum spectrum laser.

The utility model relates to the technical field of light feeding devices, in particular to an eye-closed three-dimensional light feeding LED device, which is characterized in that a pupil LED chip group comprises a red light chip and a near-infrared light chip with the wavelength range of 625nm to 960nm; a pupil LED chip set, an eyelash LED chip set and a meibomian gland LED chip set are fixedly installed on the pupil aluminum substrate, and forced eye closing distance control hair is arranged on the pupil aluminum substrate. A lens aluminum substrate and an eyebrow acupoint aluminum substrate are mounted on the lens seat; the system further comprises an integrated control circuit. By using the red light chip, the optical power density comparable to that of laser and the effective irradiation area larger than that of the laser can be obtained, and the alignment precision of a light source to acupuncture points is reduced; by utilizing the blood activating function of dark red and near-infrared light, myopia, eyebrow thickening and eyelash thickening can be prevented and controlled; health care can be carried out on meibomian glands and a suspension tough system, and light stimulation can be carried out on eye protection acupuncture points; all-directional three-dimensional light feeding can be realized anytime and anywhere; the safety values under various limit conditions refer to three kinds of sunlight.

The invention relates to a semiconductor laser polarization coupling device, belonging to laser photoelectron and the application field thereof. The device comprises a half-wave plate (2), a dispersion deviating prism (3) and a Wollastonprism (4), wherein linear polarized light beams (1) from a semiconductor laser pass through the coupling device; the polarization direction of half of light beams deviates by pi / 2 after passing through the half-wave plate (2); the polarization direction of the other half of the light beams is unchanged; two halves of light beams are deviated and emitted to reach the Wollastonprism (4) through the dispersion deviating prism (3); the light beams continue to deviate; the structure angle of a dispersion prism and the structure angle of the Wollastonprism meet the conditions for emission of parallel rays, light paths are adjusted, and one beam of the partial polarization parallel rays is output, thus realizing size compression of semiconductor laser beams, and improving the beam luminance and the beam quality. According to the invention, high-light and high-beam quality lasers with the order of magnitude of over kilowatt can be output. The coupling device is simple in structure, easy to realize and low in cost, and can meet different application requirements.

A 473nm electro-optic q-switch laser comprises a local oscillator stage, an amplifier stage and an extracavity frequency doubling stage. A convex-concave cavity suitable for high-power laser output is adopted for a resonant cavity of the local oscillator stage, a double-end pulse pump is in bonding with a neodymium-doped yttrium aluminium garnet (Nd:YAG) crystal, an electro-optic q-switch generates 946nm fundamental frequency light, high-power 946nm laser is obtained through the amplifier stage, and 473nm blue light laser is generated by two lithium triborate (LBO) crystals placed in a cascade mode finally. The 473nm electro-optic q-switch laser has the advantages of being high in repetition frequency, narrow in pulse width, high in single pulse energy and good in light beam quality, and is suitable for underwater measurement of a high-precision laser radar.

The invention puts forward the application of chip integration LED in photonic treatment field. The chip integration LED is used for treating visible parts outside a body and disease within the body in the photonic treatment field. The invention conquers the limitations of traditional LED and halogen tungsten lamps in the photonic treatment, solves conflicts of a large irradiating surface and a large light power density, cultivates a new applying field for the photonic treatment in the medical treatment and provides a new light source and a new treatment method, thus causing the photonic treatment within the body to be possible. The invention has the advantages of good curative effect, wide application, low applying cost, and small pain borne by patients, and is a new usage of the chip integration LED.