61results about How to "Improve optical power density" patented technology

The invention provides a photo-curing three-dimensional printing method and printing device based on projection. The printing method comprises the following steps: a projection system scans, prints and cures layer by layer under the control of a control system; when each layer is printed, the whole pattern needing to be printed on each layer is completed by linearly moving a projection breadth obtained by the projection system in a horizontal plane, and the projection breadth horizontally and linearly moves according to a preset route; during moving, the control system obtains the coordinate position of an area projected by the projection breadth in real time and controls a local pattern, corresponding to the coordinate position, projected by the projection system, and the printing and curing of the local pattern are completed. The projection breadth obtained by the projection system linearly moves in a horizontal plane, namely mobile projection. The large-breadth photo-curing three-dimensional printing can be realized, the printing precision and high efficiency of a projector are ensured, and the printing precision of the whole product is improved.

The invention discloses a piece of parallel light curing equipment with staggered area array light sources. The parallel light curing equipment comprises a conveying device, an area array light source curing device, a cooling device, a light source control device and a working table, wherein the cooling device is connected with the area array light source curing device, the light source control device is connected with the area array light source curing device, and the area array light source curing device is installed on the working table. The working table comprises a trolley. The trolley is movably arranged inside the working table. A longitudinal guiding rail and a guiding rail driving mechanism are arranged at the upper portion of the trolley. The area array light source curing device is arranged on the guiding rail of the trolley. The conveying device fixes a workpiece to be cured in a vacuumized mode and conveys the workpiece to be cured to the portion over the area array light source curing device or the portion under the area array light source curing device. The invention further discloses a curing method by utilizing the curing equipment. According to the parallel light curing equipment with the staggered area array light sources and the curing method, due to the fact that the staggered movements of the area array light sources and the workpiece are controlled, the evenness of curing is improved, and due to the fact that a condensing lens converts UV light beams into parallel light, the curing efficiency and precision are improved.

The invention relates to a semiconductor laser multi-chip sintering clamp and a sintering method. The sintering clamp comprises a main body, a lower pressing bar, an upper pressing bar, top blocks with pressing columns and springs. The lower pressing bar and the upper pressing bar are fixed on the main body through fixing screws; the lower pressing bar and the upper pressing bar are provided with holes which are evenly distributed and are used for limiting the top block pressing columns and feeding screws; a spring sleeves the top block pressing column; the bottom of the main body is provided with laser limitation grooves. The sintering method comprises steps of successively placing the tube casings containing heat sinks and COSs in the laser limitation grooves and the positions below the top block pressing columns, transmitting to feeding screws to enable the pressing columns to descend to the bottom and to contact with the COSs, clamping the chip by applying pressure, and performing sintering on the clamp, on which the laser is installed. The pressing column of the invention is of a square structure and maintains no rotation during the pressing down, preventing the displacement of the COS in the installation process and improving the consistency of sintering. At the meantime, the clamp is provided with a plurality of lasers according to the needs, which is high in sintering and easy to industrialization.

The invention relates to a method and laser device for producing a high optical power density by forming laser bars (LB) of diode lasers (E) in a manner that in a single laser bar (LB) the slow axes (x) of adjacent diode lasers (E) are positioned relative to each other in the same line and said diode lasers (E) emit substantially to the same direction (z), and radiation emitted by said plurality of laser bar (LB) is further collected to a combined and bright beam that is parallel with the optical axis (A). In accordance with the invention the laser bars (LB) are arranged in sectors relative to the optical axis (A) to an axial symmetrical structure in a manner that the direction of beams leaving from different sectors is turned (DE) in order to combine said beams. Preferred embodiments of the invention enable combination of efficient sector-by-sector radiation of laser bars (LB) using spatial, polarisation and/or wavelength multiplexing.

Disclosed are semiconductor laser devices which hardly have degradation when used to generate high power of 200 mW or greater over a long period of time. An exemplary semiconductor laser device comprising a semiconductor substrate, and a layer structure formed on the semiconductor substrate and having an active layer with a quantum well layer formed of a ternary system mixed crystal of a Ill-V compound semiconductor. The material of the quantum well layer is formed in an equilibrium phase which is thermodynamically stable at both the growth temperature and the operating temperature. The material preferably has a substantially homogeneous disordered microstructure. In a preferred embodiment, the material comprises GaAsSb. The quantum well layer exhibits improved thermodynamic stability, and the device can emit light in the 980 nm band at high power levels for longer periods of time without failure in comparison to conventional InGaAs 980 nm pumping lasers.

The invention provides a silicon substrate deep ultraviolet light emitting diode epitaxial chip structure and a preparation method therefor. According to the epitaxial structure of the silicon substrate deep ultraviolet light emitting diode, an AlN buffer layer, an AlxGa1-xN buffer layer, a non-doped AlyGa1-yN layer, an n type AlzGa1-zN layer, a multiple-quantum-well AluGa1-uN/AlvGa1-vN layer, a p type AlwGa1-wN layer, a P type AlmGa1-mN layer and a p type GaN contact layer are growing on the silicon substrate from the bottom up in sequence, wherein the value ranges of x, y, z, u, v and m are all from 0.01 to 0.99, and the value range of w is from 0.2 to 0.99. A thin film deep ultraviolet light emitting diode with a perpendicular structure can be prepared based on the epitaxial structure; and due to the chip structure, the extraction efficiency of the deep ultraviolet light emitting diode can be greatly improved, the axial optical output can be improved, and the optical power density can be enhanced.

The invention relates to the field of optical devices for hardening rails, in particular to an optical device for hardening the steel rail by using high-power semiconductor laser in running of a train. The optical device comprises semiconductor laser diode stacks, a polarization coupling prism, a wavelength coupling prism, a planar reflector, a symmetric ladder lens, a light beam compression lens, a slow-axis collimating lens, an optical working lens assembly and a laser head, wherein through the plurality of semiconductor laser diode stacks with fast-axis collimating lens, the light is coupled into a beam of light and output by using a wavelength coupling principle and a polarization coupling principle. The laser beam is led into the laser head so as to obtain ideal light spots required for hardening the steel rail by laser through light path design of a complete optical system. The device has the advantages of high energy utilization ratio, compact structure, convenient carrying and field application, high controllability, easy operation, low operation and maintenance cost, long service life, uniform energy distribution of light beam, no need of measures such as phosphorization, blackening and the like of the surface of the steel rail and capability of preventing negative effect brought by spraying an absorption layer.

The invention discloses a device and a method which are used for detecting sweat latent fingerprints on large breadth material to be detected. The device comprises a deep ultra-violet laser light source module, a dichronic mirror, a laser scanning optical conversion module, a two dimensional electric sample platform, a fluorescence detection module, and a control system. The device and the methodis capable of realizing preferable excitation of sweat latent fingerprint excited intrinsic fluorescence at 365nm, and increasing sweat latent fingerprint detection rate, and can be used for materialswith larger breadth; and the detection resolution can be changed based on need.

The invention discloses a particle counter sensor light beam homogenizing and sharpening illumination system. The system comprises a semiconductor laser, and a first aspheric mirror, a micro lens array scattering sheet, a second aspheric mirror, a circular hole diaphragm, a cylindrical mirror and a rectangular hole diaphragm are sequentially arranged in the light beam emitting direction of the semiconductor laser; an air inlet nozzle and an air outlet nozzle are arranged perpendicular to the light beam emitting direction, sampling airflow flows in from the air inlet nozzle of the sensor cavityand flows out from the air outlet nozzle, and a photosensitive area is formed in the intersection and overlapping area of the sampling airflow and light beams. According to the optical illumination system, the light beams are sharpened and homogenized, so that the light beams in the photosensitive area are uniformly distributed and narrowed, and the optical background noise in a scattered light collection cavity is reduced through the combined diaphragms, so that the optical illumination system has the characteristics of small size, easiness in adjustment, high particle size measurement accuracy, high resolution, high signal-to-noise ratio and high sensitivity.

The invention discloses a multi-line interference Rayleigh scattering speed measuring device for a flow field. The device comprises a laser, a multi-line laser probe and flow field interaction unit, a multi-line forward scattered light collection unit, a reference unit and a detection unit; the multi-line laser probe and flow field interaction unit comprises a half-wave plate, a cylindrical focusing lens and a cylindrical microlens array arranged in sequence along the exit light path of the laser; the detection area of a multi-line laser probe is formed on the exit light path of the laser and approaches the focus of the cylindrical focusing lens, the flow field to be measured flows through the detection area, and the direction of the flow field inclines to the exit direction of the laser; the multi-line forward scattered light collection unit is a lens set inclining to the direction of the flow field; the reference unit comprises an incident beam splitter, a reflector and an exit beam splitter; and the detection unit comprises a Fabry-Perot etalon and an ICCD (Intensified Charge Coupled Device) camera arranged along a scattering light path. The device obtains the transient two-dimensional speed of the flow field by measuring the Doppler shift of multi-line forward scattered light, and is suitable for flow speed diagnosis of multiple flow fields.

The invention discloses a super-continuum spectrum laser light source, belongs to the technical field of laser devices, and solves the problem of low laser output conversion efficiency of an existingultra-wideband super-continuum spectrum laser light source. The super-continuum spectrum laser light source comprises: a laser pumping source; a lens group which is arranged on the emergent light pathof the laser pumping source and is used for collimating and focusing the emergent light of the laser pumping source; and a thin-film waveguide device which is arranged on an emergent light path of the lens group, wherein light entering the thin-film waveguide device can be emitted out after a nonlinear effect occurs in the thin-film waveguide device, the thin-film waveguide device comprises a polarized crystal, and the polarized crystal is of a chirped domain structure. The super-continuum spectrum laser light source is used for generating the super-continuum spectrum laser.

The invention puts forward the application of chip integration LED in photonic treatment field. The chip integration LED is used for treating visible parts outside a body and disease within the body in the photonic treatment field. The invention conquers the limitations of traditional LED and halogen tungsten lamps in the photonic treatment, solves conflicts of a large irradiating surface and a large light power density, cultivates a new applying field for the photonic treatment in the medical treatment and provides a new light source and a new treatment method, thus causing the photonic treatment within the body to be possible. The invention has the advantages of good curative effect, wide application, low applying cost, and small pain borne by patients, and is a new usage of the chip integration LED.

The invention discloses a light-emitting device and a vehicle lamp applying the same. The light-emitting device comprises two light sources, a first light conductor, a second light conductor and lightguide elements, wherein the first light conductor and the second light conductor are arranged side by side; the first light conductor comprises a first light incident surface and a first tail end surface; the second light conductor comprises a second light incident surface and a second tail end surface, the first light incident surface and the first tail end surface are arranged on the same side,and the first tail end surface and the second tail end surface are arranged on the same side; two light sources are respectively arranged on the first light incident surface and the second light incident surface; the light guide elements are arranged on the first tail end surface and the second tail end surface; the first light conductor comprises a light emitting part, and the light emitting part is arranged on the second tail end face close to the first light conductor. According to the light-emitting device, the two light conductors arranged side by side and the light guide elements are arranged to form two light paths, so that light emitted by the two light sources is conducted and gathered to the light emitting part to be emitted, the luminous flux of the light emitting part can be improved, and meanwhile the light expansion amount of the whole light-emitting device is reduced.

The invention discloses a method for eliminating a semiconductor laser COMD and a semiconductor laser, wherein the method for eliminating the semiconductor laser COMD comprises the following steps: forming an epitaxial layer on a substrate; forming a non-absorption window structure on the epitaxial layer; cleaving at the non-absorbing window structure; and forming a passivation layer on the cleavage plane. By adopting the method for eliminating the semiconductor laser COMD disclosed by the invention, the forbidden bandwidth of the non-absorption window structure is large, and photons cannot beabsorbed; and since the non-absorption window structure is passivated by vacuum cleavage coating, the surface state density of the non-absorption window structure is low, and the non-radiative recombination of carriers is effectively inhibited, so that the heat productivity of the cavity surface position is extremely low, and the COMD is completely eliminated. Moreover, when the non-absorption window structure is subjected to vacuum cleavage passivation, even if the vacuum degree is reduced moderately, the non-radiative recombination at the cavity surface position can still be ignored in theworking state of the laser, and the COMD threshold value of the laser is not influenced.