NPN-structure-based laser photovoltaic cell and preparation process thereof

A laser photovoltaic cell, photovoltaic cell technology, applied in photovoltaic power generation, sustainable manufacturing/processing, circuits, etc., can solve problems such as increasing manufacturing cost and increasing material growth time, reducing costs, saving process time, and reducing consumption. Effect

Inactive Publication Date: 2011-09-14
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF8 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the method of increasing the thickness or doping concentration of the P-type window layer and the P-type absorbing layer is mainly used to reduce the series resistance of the battery, but this will increase the material growth time, thereby greatly increasing the manufacturing cost.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • NPN-structure-based laser photovoltaic cell and preparation process thereof
  • NPN-structure-based laser photovoltaic cell and preparation process thereof
  • NPN-structure-based laser photovoltaic cell and preparation process thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0048] The aforementioned preparation method of the laser photovoltaic cell based on the NPN structure comprises the following steps:

[0049] (1) On the semi-insulating GaAs substrate, the N-type doping concentration is grown by epitaxial growth and other methods at 1×10 18 cm -3 The above GaAs conductive layer;

[0050] (2) On the N-type GaAs conductive layer, the doping concentration is grown at 1×10 18 cm -3 For the above N-type AlGaAs ((Al)GaInP) barrier layer, this step can also be omitted;

[0051] (3) On the above-mentioned barrier layer, the N-type doping concentration is grown at 1×10 19 cm -3 Above GaAs(Ga 0.51 In 0.49 P) layer, the re-growth doping concentration is 1×10 19 cm -3 The above P-type layer of (Al)GaAs forms a tunnel junction, and the thickness of the P-type and N-type regions is greater than 10nm;

[0052] (4) On the above-mentioned tunnel junction, the doping concentration is grown at 1×10 18 cm -3 The above P-type AlGaAs ((Al)GaInP) barrie...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to an NPN-structure-based laser photovoltaic cell and a preparation process thereof. The photovoltaic cell comprises an N type GaAs conducting layer, a tunneling junction and a GaAs cell which are sequentially grown on a semi-insulating GaAs substrate, wherein the GaAs cell comprises a P / N junction and an N type window layer which are sequentially distributed in the direction gradually far away from the substrate. The preparation process comprises the following steps of: sequentially growing the N type conducting layer, the tunneling junction, the P / N junction, the N type window layer and an N type contact layer on the semi-insulating substrate by an epitaxial growing method to form a photovoltaic cell base body; and processing on the photovoltaic cell base body to form an isolating groove, a positive electrode, a negative electrode, an antireflection layer and an electrode lead to form the target product. The photovoltaic cell is low in series resistance, high in output voltage and high in light absorption and light conversion efficiency, can widely serve as a high-efficiency laser photovoltaic cell and is easy and convenient to prepare. The processing time of a device can be effectively saved; the cost is reduced; and the requirement of mass production is met.

Description

technical field [0001] The present invention relates to a method for manufacturing a high-efficiency laser photovoltaic cell based on an NPN structure, in particular to a high-efficiency laser photovoltaic cell, especially a photoelectric cell with a GaAs homogeneous PN junction as a photoelectric conversion layer on a semi-insulating GaAs substrate and its preparation method. Background technique [0002] Laser energy supply systems have important applications in the power supply of electronic systems in environments where stable power supply or need to avoid electric sparks are required in outdoor remote electronic systems such as smart grids, communication systems in remote areas, medical systems, industrial sensors, and aircraft fuel tank monitoring. The laser energy supply uses a high-power semiconductor laser light source, which transmits the light energy to the remote harsh environment that needs power supply through an optical fiber, and then uses a laser battery to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/068H01L31/18
CPCY02E10/50Y02E10/547Y02P70/50
Inventor 赵春雨董建荣陆书龙李奎龙赵勇明季莲杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap