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Silicon substrate deep ultraviolet light emitting diode epitaxial chip structure and preparation method therefor

A technology of light-emitting diodes and epitaxial structures, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency of AlGaN deep-ultraviolet LEDs

Inactive Publication Date: 2016-04-13
LATTICE POWER (JIANGXI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the above shortcomings, the present invention provides an epitaxial chip structure and preparation method of a silicon substrate deep ultraviolet light-emitting diode, which effectively solves the problem of low luminous efficiency of the existing AlGaN deep ultraviolet LED

Method used

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  • Silicon substrate deep ultraviolet light emitting diode epitaxial chip structure and preparation method therefor
  • Silicon substrate deep ultraviolet light emitting diode epitaxial chip structure and preparation method therefor
  • Silicon substrate deep ultraviolet light emitting diode epitaxial chip structure and preparation method therefor

Examples

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example 1

[0070] (1) if figure 1 As shown, select silicon substrate 1, after treatment, in MOCVD (metal organic compound chemical vapor deposition), with NH 3 and TMAl (trimethylaluminum) as raw materials, and grow an AlN buffer layer 2 with a thickness of 200 nm under the condition of 1200° C.

[0071] (2) In MOCVD, on the AlN buffer layer 2, with NH 3 , TMAl, TMGa (trimethylgallium) as raw materials, and grow Al with a thickness of 200nm at 1200°C 0.5 Ga 0.5 N buffer layer 3.

[0072] (3) In MOCVD, in Al 0.5 Ga 0.5 N buffer layer 3, with NH 3 , TMAl, and TMGa as raw materials, and grow non-doped Al with a thickness of 0.5um at 1400°C 0.5 Ga 0.5 N layer 4.

[0073] (4) In MOCVD, in non-doped Al 0.5 Ga 0.5 N layer 4, to NH 3 , TMAl, TMGa, SiH 4 as raw material (SiH 4 The doping concentration is 5E18cm -3 ), growing n-type Al with a thickness of 3um at 1400°C 0.5 Ga 0.5 N layer 5.

[0074] (5) In MOCVD, in n-type Al 0.5 Ga 0.5 N layer 5, to NH 3 , TMAl, and TMGa as r...

Embodiment 2

[0079] Based on the silicon substrate deep ultraviolet light emitting diode epitaxial structure provided in Example 1, in this embodiment, a silicon substrate deep ultraviolet light emitting diode chip structure is prepared, the structure is as follows figure 2 As shown, the following steps are included in the process of preparation:

[0080] After steps (1)~(8) in embodiment one, also include:

[0081] (9) Anneal the grown epitaxial structure, the annealing condition is: at 600°C, N 2 Annealed in the environment for 20min (minutes).

[0082] (10) After the annealing is completed, a layer of Al reflective electrode 10 with a thickness of 200 nm is sputtered on the surface of the p-type GaN contact layer 9 by sputtering.

[0083] (11) On the reflective electrode 10, the conductive silicon substrate 11 is bonded.

[0084] (12) The silicon substrate 1 is removed with KOH etching solution.

[0085] (13) AlN buffer layer 2, Al 0.5 Ga 0.5 N buffer layer 3 and non-doped Al 0....

example 3

[0089] (1) if figure 1 As shown, choose silicon substrate 1, after treatment, in MOCVD, with NH 3 and TMAl as raw materials, and grow an AlN buffer layer 2 with a thickness of 400 nm under the condition of 1200° C.

[0090] (2) In MOCVD, on the AlN buffer layer 2, with NH 3 , TMAl, and TMGa as raw materials, and grow Al with a thickness of 400nm at 1200°C 0.5 Ga 0.5 N buffer layer 3.

[0091] (3) In MOCVD, in Al 0.5 Ga 0.5 N buffer layer 3, with NH 3 , TMAl, and TMGa as raw materials, and grow non-doped Al with a thickness of 1.5um at 1400°C 0.3 Ga 0.7 N layer 4.

[0092] (4) In MOCVD, in non-doped Al 0.3 Ga 0.7 N layer 4, to NH 3 , TMAl, TMGa, SiH 4 as raw material (SiH 4 The doping concentration is 5E18cm -3 ), growing n-type Al with a thickness of 3um at 1400°C 0.3 Ga 0.7 N layer 5.

[0093] (5) In MOCVD, in n-type Al 0.3 Ga 0.7 N layer 5, to NH 3 , TMAl, and TMGa as raw materials, and grow Al at 1400°C 0.2 Ga 0.8 N / Al 0.4 Ga 0.6 N periodic structur...

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Abstract

The invention provides a silicon substrate deep ultraviolet light emitting diode epitaxial chip structure and a preparation method therefor. According to the epitaxial structure of the silicon substrate deep ultraviolet light emitting diode, an AlN buffer layer, an AlxGa1-xN buffer layer, a non-doped AlyGa1-yN layer, an n type AlzGa1-zN layer, a multiple-quantum-well AluGa1-uN / AlvGa1-vN layer, a p type AlwGa1-wN layer, a P type AlmGa1-mN layer and a p type GaN contact layer are growing on the silicon substrate from the bottom up in sequence, wherein the value ranges of x, y, z, u, v and m are all from 0.01 to 0.99, and the value range of w is from 0.2 to 0.99. A thin film deep ultraviolet light emitting diode with a perpendicular structure can be prepared based on the epitaxial structure; and due to the chip structure, the extraction efficiency of the deep ultraviolet light emitting diode can be greatly improved, the axial optical output can be improved, and the optical power density can be enhanced.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an epitaxial structure of a silicon substrate deep ultraviolet light emitting diode, a chip structure and a preparation method thereof. Background technique [0002] The deep ultraviolet light-emitting diode (Light Emitting Diode, LED) of AlGaN (gallium aluminum nitride) material has long life, short warm-up time, pure spectrum (the half-wave width of the luminous peak is within 15nm), small size, and high reliability. Advantages, it is considered to be the best light source to replace mercury-containing light sources such as ultraviolet low-pressure mercury lamps. Therefore, the application of AlGaN-based deep ultraviolet LEDs has great potential in the fields of medical care and sanitation, sterilization and disinfection, and has become a research hotspot. [0003] But the luminous efficiency of AlGaN deep ultraviolet LED is still very low. Especially for ultrav...

Claims

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Application Information

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IPC IPC(8): H01L33/02H01L33/06H01L33/00
CPCH01L33/02H01L33/0075H01L33/06
Inventor 王嘉星陈振
Owner LATTICE POWER (JIANGXI) CORP
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