High-power semiconductor laser beam composite apparatus
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIAXING DAHE LASER EQUIP
- Publication Date
- 2009-06-24
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a multi-beam recombination device in a high-power semiconductor laser system. The device adopts a spatial recombination method to combine beams of four wavelengths emitted by eight groups of semiconductor laser arrays into one beam. It belongs to the field of laser technology. Background technique
[0002] As we all know, high-power semiconductor lasers are widely used in various fields due to their small size, high photoelectric conversion rate and long life. In particular, kilowatt-level high-power semiconductor lasers with high beam quality and high brightness can not only be directly applied to material processing, but also have wide application and great development prospects in pumping solid-state lasers and in military, medical and other fields.
[0003] At present, in order to achieve high-power semiconductor laser output, most of them use relatively simple spatial compounding methods. For example, the German JENOP(S)T...