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High-power semiconductor laser beam composite apparatus

A compound device and laser beam technology, which is applied in the laser field, can solve the problems of increasing cost, damaging the polarization beam combiner, and the relatively high damage energy threshold of the polarization beam combiner, and achieve the effect of reducing volume and weight and reducing cost

Inactive Publication Date: 2009-06-24
JIAXING DAHE LASER EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method still has certain disadvantages. Because the method of wavelength combining and then polarization combining is used, the energy is concentrated in the last step of the polarization beam combiner, so the damage energy threshold requirements of the polarization beam combiner Relatively high, the corresponding increase in cost
Especially in practical systems, the last step of beam combining will directly damage the polarization beam combiner due to too high energy

Method used

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  • High-power semiconductor laser beam composite apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The structure of this embodiment is as figure 1 As shown, including the first semiconductor laser array 1, the second semiconductor laser array 2, the third semiconductor laser array 3, the fourth semiconductor laser array 4, the fifth semiconductor laser array 5, the sixth semiconductor laser array 6, the seventh semiconductor laser array Array 7, the eighth semiconductor laser array 8, and the first wavelength combiner 9, the second wavelength combiner 10, the third wavelength combiner 11, the first polarization beam combiner 12, the second polarization beam combiner 13 , a third polarization beam combiner 14, a fourth polarization beam combiner 15, a first wave plate 16, a second wave plate 17, a third wave plate 18, a fourth wave plate 19 and eight shaping devices A. The eight semiconductor laser arrays in this embodiment all output P-state light or S-state light.

[0024] The light emitted by the first semiconductor laser array 1 after beam shaping passes through ...

Embodiment 2

[0026] This example figure 2 As shown, the difference between it and Embodiment 1 is that the first semiconductor laser array 1, the third semiconductor laser array 3, the fifth semiconductor laser array 5 and the seventh semiconductor laser array 7 output S-state light, the second semiconductor laser array 2, The fourth semiconductor laser array 4, the sixth semiconductor laser array 6 and the eighth semiconductor laser array 8 output P-state light, so the first wave plate, the second wave plate 17, the third wave plate 18 and the first wave plate are not needed in this embodiment. Four wave plates 19 to change the polarization state. Other structures are the same as in Embodiment 1.

Embodiment 3

[0028] The structure of this embodiment is as image 3 As shown, including the first semiconductor laser array 1, the second semiconductor laser array 2, the third semiconductor laser array 3, the fourth semiconductor laser array 4, the fifth semiconductor laser array 5, the sixth semiconductor laser array 6, the seventh semiconductor laser array Array 7, the eighth semiconductor laser array 8, and the first wavelength combiner 9, the second wavelength combiner 10, the third wavelength combiner 11, the first polarization beam combiner 12, the second polarization beam combiner 13 , a third polarization beam combiner 14, a fourth polarization beam combiner, a first wave plate 16, a second wave plate 17, a third wave plate 18, a fourth wave plate 19 and four shaping devices A. The eight semiconductor laser arrays in this embodiment all output P-state light or S-state light.

[0029] The difference between this embodiment and Embodiment 1 is that in this embodiment, the light emi...

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Abstract

The invention relates to a multiple-beam composite device in a high-power semiconductor laser system. The device synthesizes light beams with four types of wavelengths sent out by eight groups of semiconductor laser arrays into a beam by adopting a space composite method. The invention belongs to the laser technical field. The device firstly carries out polarization coupling to eight beams of light with four types of wavelengths sent out by a first semiconductor laser array, a second semiconductor laser array, a third semiconductor laser array, a fourth semiconductor laser array, a fifth semiconductor laser array, a sixth semiconductor laser array, a seventh semiconductor laser array and a eight semiconductor laser array by utilizing a polarizing beam combiner to obtain four beams of natural light with four types of wavelengths; then the four beams of light are combined pairwise by utilizing a first wavelength beam combiner and a second wavelength beam combiner; and finally the two beams of beam combining light obtained are combined by a third wavelength beam combiner. The device has the advantages of more reasonable structure, less volume and lower cost.

Description

technical field [0001] The invention relates to a multi-beam recombination device in a high-power semiconductor laser system. The device adopts a spatial recombination method to combine beams of four wavelengths emitted by eight groups of semiconductor laser arrays into one beam. It belongs to the field of laser technology. Background technique [0002] As we all know, high-power semiconductor lasers are widely used in various fields due to their small size, high photoelectric conversion rate and long life. In particular, kilowatt-level high-power semiconductor lasers with high beam quality and high brightness can not only be directly applied to material processing, but also have wide application and great development prospects in pumping solid-state lasers and in military, medical and other fields. [0003] At present, in order to achieve high-power semiconductor laser output, most of them use relatively simple spatial compounding methods. For example, the German JENOP(S)T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B27/28G02B27/09G02B5/30
Inventor 王智勇许春晓曹银花刘友强
Owner JIAXING DAHE LASER EQUIP
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