Step array high-voltage light-emitting diode and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JILIN UNIV
- Publication Date
- 2011-07-20
- Estimated Expiration
- Not applicable Β· inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of semiconductor light-emitting devices and their preparation, and in particular relates to a GaN-based array type high-voltage light-emitting tube and a preparation method thereof. Background technique
[0002] With the breakthrough of the third-generation semiconductor material gallium nitride and the advent of blue, green, and white light-emitting diodes, following the microelectronics revolution triggered by semiconductor technology, a new industrial revolution-the lighting revolution is being bred, and its symbol is the semiconductor Lamps will gradually replace incandescent and fluorescent lamps. Because semiconductor lighting (also known as solid-state lighting) has the advantages of energy saving, long life, maintenance-free, and environmental protection, it is generally believed in the industry that, just like transistors replace electron tubes, semiconductor lamps replace traditional incandescent l...