Step array high-voltage light-emitting diode and preparation method thereof

A high-voltage light-emitting, stepped technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of poor heat dissipation and complicated process of array-type high-voltage light-emitting tubes
CN102130107AInactive Publication Date: 2011-07-20JILIN UNIV +2

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
JILIN UNIV
Publication Date
2011-07-20
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention belongs to the technical field of semiconductor luminescent devices and preparation thereof, and particularly relates to a gallium nitride (GaN)-based array high-voltage light-emitting diode and a preparation method thereof. The light-emitting diode consists of a support substrate 1, soldering terminals 2 on the support substrate 1 and unit tube cores 3 on the soldering terminals 2,and is characterized in that the unit tube cores 3 have a vertical structure, an upper electrode 31 of each unit tube core is in a strip shape, and a lower electrode 32 is covered on the lower side of all the unit tube cores 3; the support substrate 1 has a step structure in the one-dimensional direction, and a metalized film 11 is arranged on each step; and the unit tube core 3 is formed on eachstep of the support substrate 1, the unit tube cores 3 are welded and fixed on the support substrate 1 by the soldering terminals 2, the lower electrode 32 of one unit tube core on the upper side is welded on the upper electrode 31 of the unit tube core on the lower side simultaneously, and a plurality of unit tube cores are welded in series to form the step array high-voltage light-emitting diode. By the step array high-voltage light-emitting diode, the defects that a face-up structure is poor in heat dissipation and a preparation process for bridge electrodes is complex are overcome, and the application range of the high-voltage light-emitting diode is expanded further.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor light-emitting devices and their preparation, and in particular relates to a GaN-based array type high-voltage light-emitting tube and a preparation method thereof. Background technique

[0002] With the breakthrough of the third-generation semiconductor material gallium nitride and the advent of blue, green, and white light-emitting diodes, following the microelectronics revolution triggered by semiconductor technology, a new industrial revolution-the lighting revolution is being bred, and its symbol is the semiconductor Lamps will gradually replace incandescent and fluorescent lamps. Because semiconductor lighting (also known as solid-state lighting) has the advantages of energy saving, long life, maintenance-free, and environmental protection, it is generally believed in the industry that, just like transistors replace electron tubes, semiconductor lamps replace traditional incandescent l...

Claims

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