Substrate-glaring SiC substrate vertical structure light-emitting tube and preparation method thereof

Abstract

The invention belongs to the technical field of semiconductor devices and preparation thereof, and relates to several GaN-based light-emitting tubes and preparation methods thereof. A device is composed of a substrate, an n type GaN buffer layer and a lower limit layer 2 epitaxially grown on the substrate, a GaN material multiple quantum well light-emitting layer 3, a p type GaN upper limit layer 4, a p type InxGa1-xN cover layer 5, an upper electrode 6 and a lower electrode 7. The light-emitting tube and the preparation method of the invention are characterized in that the upper electrode 6 is prepared to have a reflector function, a p type InyGa1-yN phase matching layer 8 is grown between the cover layer 5 and the upper electrode 6, the substrate 1 is an n type Sic single crystal substrate, a ZnO thin film layer 9 is prepared under the substrate 1 or a ZnO nanowire layer 11 is also prepared under the substrate 1, and the electrode 7 is prepared under the substrate 1 by only covering 5%-20% area. The invention provides a novel large-power SiC substrate vertical structure light-emitting tube and a preparation method thereof based on advantages that a SiC substrate crystal lattice and a GaN are well matched, electric conduction performance and heat conduction performance are both higher, and price is moderate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light-emitting devices and their preparation, in particular to a GaN-based light-emitting tube and a manufacturing method thereof. Background technique [0002] With the breakthrough of the third-generation semiconductor material gallium nitride and the advent of blue, green, and white light-emitting diodes, following the microelectronics revolution triggered by semiconductor technology, a new industrial revolution-the lighting revolution is being bred, and its symbol is the semiconductor Lamps will gradually replace incandescent and fluorescent lamps. Because semiconductor lighting (also known as solid-state lighting) has the advantages of energy saving, long life, maintenance-free, and environmental protection, it is generally believed in the industry that, just like transistors replace electron tubes, semiconductor lamps replace traditional incandescent lamps and fluorescent lamps, which ...

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Problems solved by technology

However, due to the large refractive index of the SiC material, most of the light emitted by the active region is absorbed by the substrate, so the light extraction rate is low.

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