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34results about How to "Rapid crystallization" patented technology

Method for preparation of high-purity fatty acyl amino acid salt

The invention discloses a method for preparation of a high-purity fatty acyl amino acid salt, wherein the method includes the following steps: a) carrying out a reaction of amino acid with fatty acyl chloride, neutralizing released hydrochloric acid with an alkaline substance, and generating a fatty acyl amino acid salt crude product; b) adding a solvent to the crude product, heating to dissolve and dispersing to obtain a solution, and adjusting the pH value of the solution; c) placing the solution on an ultrasonic apparatus, slowly cooling to 20-25 DEG C, carrying out ultrasonic crystallization of the solution for the first time, and separating through reduced pressure suction filtration, to obtain a filter cake for standby application; and d) adding a solvent to the filter cake obtained in the former step, heating to dissolve and dispersing to obtain a solution, carrying out ultrasonic crystallization for the second time, separating through reduced pressure suction filtration, to obtain a filter cake, carrying out vacuum drying of the filter cake, and thus obtaining the high-purity fatty acyl amino acid salt finished product. The high-purity fatty acyl amino acid salt having less impurity residue, good crystal shape and uniform granularity can be obtained by using the method; the method has the advantages of reasonable process, easy operation, high production efficiency, good production preparation reproducibility, and stable product quality.
Owner:ZHANGJIAGANG GREAT CHEM

Method for preparing zeolite molecular sieve through quick crystallization of dry glue

The invention discloses a method for preparing a zeolite molecular sieve through quick crystallization of dry glue, and relates to the field of molecular sieve solid phase synthesis. The method specifically comprises the following steps: adding an aluminum source and a fluoride into a silicon-aluminum type molecular sieve mother solution for crystallizing to obtain a silicon-aluminum type molecular sieve guiding agent; adding an alkali source, a silicon source, a template agent R and deionized water into the silicon-aluminum type molecular sieve guiding agent, uniformly carrying out mixing, and then carrying out drying to obtain dry glue powder; and crystallizing the dry glue powder in a steam atmosphere in a continuous crystallization kettle to obtain the zeolite molecular sieve, whereinthe crystallization time is 2-10 hours. The guiding agent disclosed by the invention is obtained by secondary crystallization, and is high in activity and strong in guiding action, so that the usage amount of the template agent can be reduced, crystallinity can be improved, generation of hybrid crystal phases formed by solid-phase synthesis is avoided, and the crystallization period is shortened.The continuous crystallization kettle can be used for continuous production without need of cooling and pressure relief, so that the required crystallization time is short, and efficiency and yield are high. The prepared zeolite molecular sieve is good in stability, high in crystallinity and high in silicon-aluminum ratio.
Owner:TAIYUAN DACHENG ENVIRONMENTAL ENERGY CHEM TECH

FDM-3D printer external-connected color mixer

The invention provides an FDM-3D printer external-connected color mixer. The FDM-3D printer external-connected color mixer comprises a box frame, a wire feeding device, a melting chamber, a wire discharge device and a cooling device; a feeding runner of the melting chamber is connected with feeding throat pipes; the wire feeding device is connected with the feeding throat pipes through wire feeding guide pipes; a discharge runner of the melting chamber is connected with a wire discharge guide pipe through a discharge throat pipe; the melting chamber is fixed in the box frame through a fixing device; two ends of a cooling pipe respectively communicate with a water pump and a lower water tank; and the water pump conveys water in the lower water tank into the cooling pipe, and drives the water in the lower water tank and water in an upper water tank to circulate. The FDM-3D printer external-connected color mixer uses the wire feeding device for controlling the wire feeding speed of wires with various colors and realizes different wire feeding quantities of wires with five colors of three primary colors, black and white; five mixed wires are fed to a wire melting and discharge device for heating and melting by the guide pipes to realize mixing and color matching so as to form different mixed colors; and the FDM-3D printer external-connected color mixer saves the space occupied by a printer, meanwhile, finishes upgrading of traditional equipment, and saves the cost.
Owner:北京交通大学海滨学院

A film coating device for preventing offset in semiconductor production

The invention discloses a coating device for semiconductor production that prevents deviation. A coating device for semiconductor production that prevents deviation includes a device main body, a vertical screw rod, a connecting sleeve, a first rotating shaft, a slot, and a second coating device, a second rotating shaft, a second gear, a first threaded mandrel, a first bearing, a rotating turntable, semiconductors to be processed and fan blades. The upper end of the main body of the device is provided with a first motor. The fixing device provided in the semiconductor production coating device for preventing deviation, artificially turns the knob on the fixing device to make the second screw mandrel rotate, and the second screw mandrel is threadedly connected with the first clamping block, so that the first screw mandrel is screwed. The clamping block moves on the horizontal plane, driving the sliding block to move on the slide rail, so as to facilitate the adjustment of the position of the first clamping block. By adjusting the position of the first clamping block, it is convenient to adjust the distance between the first clamping block and the second clamping block, so that Clamp the semiconductor to be processed to prevent the semiconductor to be processed from shifting.
Owner:江苏钰晶半导体科技有限公司

A method for preparing zeolite molecular sieves by rapid crystallization of dry glue

The invention discloses a method for preparing a zeolite molecular sieve through quick crystallization of dry glue, and relates to the field of molecular sieve solid phase synthesis. The method specifically comprises the following steps: adding an aluminum source and a fluoride into a silicon-aluminum type molecular sieve mother solution for crystallizing to obtain a silicon-aluminum type molecular sieve guiding agent; adding an alkali source, a silicon source, a template agent R and deionized water into the silicon-aluminum type molecular sieve guiding agent, uniformly carrying out mixing, and then carrying out drying to obtain dry glue powder; and crystallizing the dry glue powder in a steam atmosphere in a continuous crystallization kettle to obtain the zeolite molecular sieve, whereinthe crystallization time is 2-10 hours. The guiding agent disclosed by the invention is obtained by secondary crystallization, and is high in activity and strong in guiding action, so that the usage amount of the template agent can be reduced, crystallinity can be improved, generation of hybrid crystal phases formed by solid-phase synthesis is avoided, and the crystallization period is shortened.The continuous crystallization kettle can be used for continuous production without need of cooling and pressure relief, so that the required crystallization time is short, and efficiency and yield are high. The prepared zeolite molecular sieve is good in stability, high in crystallinity and high in silicon-aluminum ratio.
Owner:TAIYUAN DACHENG ENVIRONMENTAL ENERGY CHEM TECH

A directional drawing and discharging vacuum melting furnace

The invention discloses a directional drawing discharging type vacuum melting furnace. The directional drawing discharging type vacuum melting furnace comprises a furnace body with a vacuum suction port, wherein a crucible is arranged in the furnace body, induction heating coils are located outside the crucible, a pushing device with the output end facing upwards is arranged on the bottom surfaceof the interior of the furnace body, the output end of the pushing device is in contact with the bottom of the crucible, and discharge pipes penetrating through the crucible are arranged at the bottomof the crucible; drawing rods are arranged in the discharge pipes, a crystallization chamber is arranged below the furnace body, and water cooling boxes are arranged on the top surface of the interior of the crystallization chamber; the discharge pipes penetrate through the water cooling boxes, and the bottom ends of the discharge pipes penetrate through the crystallization chamber from the bottom surface of the crystallization chamber; crystallization heads are fixedly connected to the tops of the drawing rods, the crystallization heads are small upper-small and lower-big cones, and spiral grooves are formed in the surfaces of the crystallization heads; the directional drawing discharging type vacuum melting furnace further comprises isolation blocks located inside the furnace body, andthe crucible is placed on the isolation blocks. According to the directional drawing discharging type vacuum melting furnace, the problem that industrial silicon often needs secondary molding in use in the prior art is solved, and the purposes that one molding is carried out, secondary molding is not required, and the cost is reduced are realized.
Owner:江苏斯力康科技有限公司

A kind of high reliability phase change material and phase change memory and preparation method

The invention discloses a high-reliability phase-change material, which is a superlattice-like phase-change material layer formed by cyclically and alternately stacking a first phase-change material layer and a second phase-change material layer. The first phase-change material layer A superlattice-like interface is formed between the material layer and the second phase-change material layer, and the first phase-change material layer is Sb 2 Te 3 As an induction layer, the second phase change material layer is Ge 15 Te 85 , there are at least three layers of alternating overlapping layers. Amorphous Sb 2 Te 3 The crystallization of the layer requires low energy and is easy to form a stable lattice orientation, so the selected Sb2Te3 layer can be used as an induction layer to make the amorphous Ge 15 Te 85 The layer has a higher phase change speed during the phase change process, which can promote the rapid crystallization of the entire phase change material; and the selected Ge 15 Te 85 In the energy band structure of the layer, the defect state is mainly located in the local state of the band tail, rather than the defect energy level near the Fermi level in the band gap, and the resistance drift will not occur due to the relaxation of the defect energy level, so in the phase During the transformation process, it has a higher phase transformation speed.
Owner:HUAZHONG UNIV OF SCI & TECH
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