A kind of high reliability phase change material and phase change memory and preparation method

Abstract

The invention discloses a high-reliability phase-change material, which is a superlattice-like phase-change material layer formed by cyclically and alternately stacking a first phase-change material layer and a second phase-change material layer. The first phase-change material layer A superlattice-like interface is formed between the material layer and the second phase-change material layer, and the first phase-change material layer is Sb 2 Te 3 As an induction layer, the second phase change material layer is Ge 15 Te 85 , there are at least three layers of alternating overlapping layers. Amorphous Sb 2 Te 3 The crystallization of the layer requires low energy and is easy to form a stable lattice orientation, so the selected Sb2Te3 layer can be used as an induction layer to make the amorphous Ge 15 Te 85 The layer has a higher phase change speed during the phase change process, which can promote the rapid crystallization of the entire phase change material; and the selected Ge 15 Te 85 In the energy band structure of the layer, the defect state is mainly located in the local state of the band tail, rather than the defect energy level near the Fermi level in the band gap, and the resistance drift will not occur due to the relaxation of the defect energy level, so in the phase During the transformation process, it has a higher phase transformation speed.

Description

technical field [0001] The invention belongs to the field of microelectronics, and in particular relates to a high-reliability phase-change material and a preparation method thereof, a phase-change memory using the high-reliability phase-change material and a preparation method thereof. Background technique [0002] As a new type of memory, phase-change memory perfectly fills the device gaps in the current memory architecture due to its appropriate storage density, erasing speed and power consumption. Moreover, because the preparation process of phase change memory is highly compatible with the current CMOS, it is one of the best solutions for the next generation memory architecture, and it has huge potential in high density, high speed, low power consumption, embedded applications and special environment applications. commercial potential. [0003] Phase-change memory uses phase-change materials as storage media. The Joule heat generated by electric pulses changes the resi...

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Problems solved by technology

[0008] However, since the resistance drift of phase change materials is determined by the intrinsic properties of the material and has nothing to do with the size of the material and the device on a spatial scale beyond 10 nm, the optimization of the device structure cannot essentially reduce the resistance drift of the phase change memory.

On the one hand, the improvement of reading and writing methods increases the cost of peripheral circuit design, and on the other hand, it will reduce the speed of reading and writing.

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