Resistive memory device and programming method of the same

Abstract

Resistive memory device and programming method of the same. In some example embodiments, a program pulse is applied to a resistive memory cell and a plurality of post pulses are applied to the resistive memory cell at a time point after a relaxation time from a time point when application of the program pulse is finished, the plurality of post pulses having voltage levels that increase sequentially. Programming speed and / or performance of the resistive memory device may be enhanced by accelerating resistance drift of the resistive memory cell using the plurality of post pulses having the voltage levels that increase sequentially.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2018-0173853 filed on December 31, 2018 at the Korean Intellectual Property Office (KIPO), the disclosure of which is hereby incorporated by reference in its entirety. technical field [0002] Some example embodiments relate generally to semiconductor integrated circuits, and more particularly, resistive memory devices and / or methods of programming resistive memory devices. Background technique [0003] Semiconductor memory devices for storing data can be classified into volatile memory devices and nonvolatile memory devices. Volatile memory devices, such as dynamic random access memory (DRAM) devices, are generally configured to store data by charging or discharging capacitors in memory cells, and lose the stored data when power is turned off. Nonvolatile memory devices such as flash memory devices can retain stored data even when power is turned off. Various types of resistive memory have been d...

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Problems solved by technology

However, the resistance of a programmed resistive memory cell may drift or vary over time, which can degrade the performance of the resistive memory device

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