Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resistance variable memory device and operating method thereof

A storage device and storage controller technology, applied in static memory, read-only memory, digital memory information, etc., can solve problems such as changes in impedance variable memory devices and affecting device reliability

Active Publication Date: 2009-02-25
SAMSUNG ELECTRONICS CO LTD
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the characteristics of phase change materials (GST), the resistance of the resistance variable memory device will change according to the passage of time
This phenomenon is called impedance drift and it can negatively affect device reliability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistance variable memory device and operating method thereof
  • Resistance variable memory device and operating method thereof
  • Resistance variable memory device and operating method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] Aspects of the present invention will be described below with reference to the accompanying drawings. When describing these embodiments, detailed descriptions of well-known items, functions, or constructions are generally omitted for conciseness.

[0047]It will be understood that, although the terms first, second etc. are used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another, but do not imply a necessary order of the elements. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0048] It will be understood that when an element is referred to as being "on" or "connected" or "coupled" to another element, it can be direct...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is a resistance variable memory device and a method for operating same. The resistance variable memory device has a phase change material between a top electrode and a bottom electrode. In the method for operating a resistance variable memory, the write current is applied in a direction from the top electrode to the bottom electrode, and the read current is applied in a direction from the bottom electrode to the top electrode. The phase change material is programmed by applying the write current, and a resistance drift of the phase change material is restrained by applying the read current.

Description

[0001] Related Application Cross Reference [0002] This patent application claims priority under 35 U.S.C. §119 from Korean Patent Application No. 10-2007-0085591 filed on Aug. 24, 2007, the entire contents of which are hereby incorporated by reference. technical field [0003] The invention disclosed herein relates to memory devices, and more particularly, to impedance variable memory devices and methods of operating the same. Background technique [0004] The demand for semiconductor memory devices realizing high integration and high capacity has steadily increased. An example of such a semiconductor device is flash memory, which is mainly used in portable electronic devices. Furthermore, semiconductor memory devices having nonvolatile materials instead of capacitors as used in DRAMs have appeared. [0005] For example, such semiconductor devices include ferroelectric RAM (FRAM) using ferroelectric capacitors, magnetic RAM (MRAM) using tunneling magnetoresistance (TMR) ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/56G11C16/10G11C16/26
CPCG11C13/0004G11C11/5678G11C11/56G11C13/02
Inventor 裵晙洙堀井秀树朴美林
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com