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High-stability phase change memory cell and preparation method thereof

A phase-change storage and phase-change material technology, applied in the field of high-stability phase-change memory cells and their preparation, can solve problems such as inability to achieve three-dimensional confinement, improve device stability, inhibit diffusion and volatilization, and improve thermal stability Effect

Pending Publication Date: 2020-12-25
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a high-stability phase-change memory unit and its preparation method, which overcomes the defects that the existing technology cannot achieve the three-dimensional limitation of the crystal grains and the purpose of improving the heating efficiency at the same time, by using dielectric isolation materials and The transition layer material wraps the phase change material in it, which can inhibit the volatilization of the phase change material, keep the composition of the phase change material stable, and reduce the power consumption of the device

Method used

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  • High-stability phase change memory cell and preparation method thereof
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Embodiment 1

[0030] like Figure 1 to Figure 6 As shown, the highly stable phase-change memory cell of the present invention at least includes: a semiconductor substrate, a lower electrode layer, a dielectric isolation layer, a transition layer, a phase-change material region, and an upper electrode, wherein the phase-change material is Phase change materials with three-dimensional confinement capabilities. The phase change material is Ta-Sb-Te, In-Sb-Te, In-Ge-Sb-Te, In-Sc-Sb-Te, Al-Ge-Sb-Te, Ga-Ge-Sb-Te, One of C-Ge-Sb-Te, Hf-Sb-Te, Ta-Sc-Sb-Te, the thickness is 20-100nm, the transition layer is located between the dielectric isolation layer and the phase change material, the transition layer material For WN, TaN, C and other materials, the thickness is 2-10nm.

Embodiment 2

[0032] In this embodiment, Si is prepared by magnetron sputtering 3 N 4 Dielectric material wrapped C-Ge 2 Sb 2 Te 5 Phase change material unit.

[0033] Specific steps:

[0034] 1) Clean a (100) oriented semiconductor substrate (such as a silicon substrate), prepare a 100nm thick tungsten electrode 102 (i.e. lower electrode) on a silicon substrate 101, as figure 1 shown.

[0035] 2) Deposit a silicon nitride layer 103 (i.e. dielectric isolation layer) on the substrate deposited with tungsten electrodes, with a thickness of 100nm, such as figure 2 shown.

[0036] 3) Carve out a region with a diameter of 200nm on the silicon nitride layer 103 (by an exposure-etching process) as the region 104 where a phase-change material layer needs to be formed. The exposure method used is electron beam exposure, and the etching method is reactive ion etching, such as image 3 shown.

[0037] 4) Prepare a layer of C transition layer on the silicon substrate 1 where a phase change ...

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Abstract

The invention relates to a high-stability phase change memory cell and a preparation method thereof. The high-stability phase change memory cell comprises a substrate layer, an electrode material, a dielectric isolation material, a phase change material region and a transition layer material between the phase change material and the dielectric isolation material. The phase change memory unit formed in the invention can inhibit growth of phase change material grains, improve the thermal stability of a phase change memory, effectively inhibit diffusion and volatilization of each element in the phase change material, reduce the resistance drift coefficient and reduce the power consumption of a device.

Description

technical field [0001] The invention belongs to the field of phase-change storage unit and its preparation, in particular to a high-stability phase-change storage unit and its preparation method. Background technique [0002] The principle of phase change memory (PCRAM) is to use the huge difference in resistivity before and after the material phase change to realize data storage. In PCRAM, one state (ie, the crystalline state) has a lower resistivity and the other state (ie, the amorphous state) has a higher resistivity. A logical "1" or a logical "0" depends on which resistive state the phase change material is in. PCRAM has the advantages of non-volatility, long cycle life, low power consumption, multi-level storage, high-speed reading, radiation resistance and simple manufacturing process (compatible with CMOS process). Compared with other new types of memory, PCRAM is considered to be a high-density storage technology that may become a mainstream memory. At present, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/231H10N70/861H10N70/011
Inventor 宋志棠宋三年薛媛王若冰
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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