Piezoresistance-type triaxial accelerometer with high output stability

A shaft acceleration and stability technology, applied in the direction of measuring acceleration, using inertial force for acceleration measurement, multi-dimensional acceleration measurement, etc., can solve problems such as exposed electricity and varistor output instability, and achieve high process feasibility and simple structure. , Reasonable design effect

Inactive Publication Date: 2018-02-23
ZHONGBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the P-type varistor is connected to the power supply voltage, the P-type varistor strip and the surrounding N-type silicon substrate form a PN junction forward bias, which will cause a certain degree of leakage and cause the output of the varistor to be unstable.

Method used

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  • Piezoresistance-type triaxial accelerometer with high output stability
  • Piezoresistance-type triaxial accelerometer with high output stability
  • Piezoresistance-type triaxial accelerometer with high output stability

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Embodiment Construction

[0016] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0017] A piezoresistive three-axis accelerometer with high output stability, such as figure 1 As shown, including SOI substrate, the device layer of SOI substrate 1 is bonded to a patterned glass sheet 2, and the substrate layer of SOI substrate 1 is bonded to a glass sheet 2 to adjust the damping ratio and resistance of the accelerometer. The purpose of overload.

[0018] Such as figure 2 As shown, the SOI substrate includes a central mass 4, eight rectangular beams 5, and a round frame 6. The device layers on the four sides of the central mass 4 are integrally connected with the round frame 6 through two rectangular beams 5, namely the mass 4 The right side is connected to the back-shaped frame through the upper right beam and the lower right beam, the upper side is connected to the back-shaped frame through the upper left beam and the upper ...

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Abstract

The invention discloses a piezoresistance-type triaxial accelerometer with high output stability. The accelerometer comprises an SOI substrate, an upper glass cover plate and a lower glass cover plate, and a center quality block is supported on a zigzag frame through eight rectangular beams. A phosphorus element is poured into the periphery of each piezoresistor on the corresponding beam through icons, heavy doping is conducted, electric potential which is higher than or equal to the power supply voltage of the wheatstone bridge is accessed to the periphery of each piezoresistor through a welding disk, the electric leakage phenomenon of a piezoresistor strip is avoided, and the output stability of the piezoresistance-type accelerometer is achieved.

Description

Technical field [0001] The invention relates to the field of piezoresistive accelerometers in MEMS sensors, in particular to a structure design and process realization method of a piezoresistive accelerometer with high output stability. Background technique [0002] The piezoresistive effect refers to the phenomenon that when the semiconductor is subjected to stress, the energy band changes due to the stress, and the energy of the energy valley moves to change the resistivity. Since the piezoresistive coefficient of the P-type varistor is greater than that of the N-type varistor, the MEMS sensor based on the piezoresistive effect generally obtains the P-type varistor by ion implantation of boron on the N-type substrate. To achieve higher sensitivity of the sensor under the same conditions. When the P-type varistor is connected to the power supply voltage, the P-type varistor bar and the surrounding N-type silicon substrate form a PN junction forward bias, which will cause a cert...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/12G01P15/18
CPCG01P15/124G01P15/18
Inventor 张文栋宋金龙何常德薛晨阳
Owner ZHONGBEI UNIV
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