A piezoresistive acceleration and pressure integrated sensor and its manufacturing method

A technology of acceleration sensor and pressure sensor, applied in the field of pressure integrated sensor and its manufacture, piezoresistive acceleration, can solve the problems of difficult sensor integration, very different sensor structure solutions, etc., to achieve the effect of reducing cost and good performance

Active Publication Date: 2017-04-12
江苏英特神斯科技有限公司
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Problems solved by technology

However, compared with integrated circuits, the integration of sensors is more difficult. The reason is that the working principles and structural solutions of different sensors are very different. From the perspective of working principles, some sensors are based on the principle of resistance sensitivity, and some sensors are based on the principle of capacitance sensitivity. ; From the point of view of structural schemes, some require special structures such as thin films, while others require special sensitive materials

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  • A piezoresistive acceleration and pressure integrated sensor and its manufacturing method
  • A piezoresistive acceleration and pressure integrated sensor and its manufacturing method
  • A piezoresistive acceleration and pressure integrated sensor and its manufacturing method

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Embodiment Construction

[0052] The present invention will be further described below in conjunction with the accompanying drawings, but the protection scope of the present invention is not limited thereto.

[0053] Such as figure 1 As shown, the MEMS piezoresistive acceleration and pressure integrated sensor based on anodic bonding package adopts the first bonded glass-silicon base-second bonded glass sandwich structure, and the piezoresistive acceleration and pressure integrated The sensor mainly includes: a silicon base (9), a piezoresistive acceleration sensor cantilever beam (14) for measuring uniaxial acceleration, a piezoresistive pressure sensor diaphragm (11) for measuring pressure, and a boron-concentrated wire (7) , a metal pin (8), a second bonding glass (10) for anode bonding with the silicon base, and a first bonding glass (1) for anode bonding with the amorphous silicon (6).

[0054] Wherein, the upper surface root of the piezoresistive acceleration sensor cantilever beam (14) used to ...

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Abstract

The invention provides a piezoresistive acceleration and pressure integrated sensor based on anodic bonding and packaging and a method for manufacturing the piezoresistive acceleration and pressure integrated sensor. The piezoresistive acceleration and pressure integrated sensor integrates a piezoresistive acceleration sensor and a piezoresistive pressure sensor and is provided with a first bonding glass-silicon substrate-second bonding glass type sandwich structure. The piezoresistive acceleration and pressure integrated sensor is novel in structure, low in weight, small in size, high in stability, and high in anti-pollution capacity. In addition, according to the piezoresistive acceleration and pressure integrated sensor and the method for manufacturing the piezoresistive acceleration and pressure integrated sensor, the same technology is applied to the same chip, the pressure measurement capacity and the acceleration measurement capacity are achieved through different kinds of design, and the technological processes are simple and easy to implement. The piezoresistive acceleration and pressure integrated sensor has a certain application prospect in the fields such as the aviation field, the military field, the automobile field and the environment monitoring field.

Description

[0001] (1) Technical field [0002] The invention relates to a piezoresistive acceleration and pressure integrated sensor in the field of MEMS (micro-electromechanical systems) sensors and a manufacturing method thereof, in particular to a MEMS piezoresistive acceleration and pressure integrated sensor based on anodic bonding packaging and a manufacturing method thereof. [0003] (2) Background technology [0004] In aerospace, military, automobile, environmental monitoring and other fields, it is often necessary to measure parameters such as acceleration and pressure at the same time. However, in these applications, due to the strict limitations of environmental adaptability, volume, cost, and functions, the sensors are required to be miniaturized, integrated, and multifunctional. Integrated sensors can integrate multiple different sensors on the same chip to detect different physical quantities at the same time, and are small in size and low in unit cost. s concern. However...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01D21/02
Inventor 董健蒋恒孙笠
Owner 江苏英特神斯科技有限公司
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