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A piezoresistive mems high overload accelerometer

An accelerometer and high-overload technology, applied in the direction of acceleration measurement using inertial force, impedance network, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the deformation interference of the double-beam structure laterally, and the silicon chip bonding process Difficulties, difficulty in mass production, etc., to achieve the effect of improved sensitivity, large deformation, and low-cost mass production

Active Publication Date: 2016-10-26
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that the process is complicated, the mass production is difficult, the silicon wafer bonding process is difficult, and the stability is questionable
Secondly, the double-beam structure is easily disturbed by lateral deformation.

Method used

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  • A piezoresistive mems high overload accelerometer
  • A piezoresistive mems high overload accelerometer
  • A piezoresistive mems high overload accelerometer

Examples

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Embodiment Construction

[0033] The present invention will be further described below in conjunction with the accompanying drawings.

[0034] Such as Figure 3 to Figure 6 As shown, a piezoresistive MEMS high-overload accelerometer includes a square frame 4, 4 main beams 1, 4 microbeams 2 and a quality block 3; the main beam 1 is located in the square frame 4, and all The main beam 1 is connected to the mass block 3; the microbeam 2 is arranged on one side of the main beam 1, and the microbeam 2 is connected in parallel with the main beam 1, and the whole accelerometer structure is centrally symmetrical; the connection between the microbeam 2 and the main beam 1 A groove 9 is provided between them, and a buffer block 8 is respectively provided at the connection between the micro-beam 2 and the mass block 3 and the frame 4. The side of the buffer block 8 is a right-angled trapezoid, and the groove 9 causes the buffer block 8 to be separated from the main beam 1; The thickness of the buffer block 8 is ...

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Abstract

The invention discloses a piezoresistive type high overload microelectromechanical system (MEMS) accelerometer. The piezoresistive type high overload MEMS accelerometer comprises a frame, a group of main beams, a group of micro beams and a mass block. The main beams are arranged in the frame and connected with the mass block. The micro beams are respectively arranged on one or two sides of the main beams and parallel to the same. When the micro beams are respectively arranged on one side of the main beams, the whole accelerometer is of a centrosymmetric structure. When the micro beams are respectively arranged on two sides of the main beams, the whole accelerometer is of a full symmetric structure. As structures of the main beams and the micro beams are simply combined with one silicon wafer, a contradiction of a negative correlation between a high range and a high sensitivity is overcome, and the technology is simplified to achieve production in a large scale; meanwhile, stress concentration in corners caused by direct connection between the beams and the mass block is eliminated through buffer locks, and accordingly the accelerometer is less prone to damage.

Description

technical field [0001] The present invention relates to an accelerometer, in particular, relates to an accelerometer which takes into account both high resonance frequency and high sensitivity and is convenient for mass production. Background technique [0002] MEMS accelerometers are widely used, for example in automobiles and other applications. One area where MEMS accelerometers are used is in global positioning applications to provide backup information indicative of the motion of the vehicle being used during short time intervals during which satellite communication links are temporarily interrupted. However, it will be appreciated that this is only one possible application in which a MEMS accelerometer may be used, and that the invention is not limited in this respect. [0003] Abroad, the 7270A series of piezoresistive acceleration sensors produced by ENDEVCO in the United States [12]. Among them, the 7270A-200K has a range of 200,000g and a maximum installation reso...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01P15/12B81B7/02
Inventor 徐晓苏金博楠
Owner SOUTHEAST UNIV
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