Piezoresistance type accelerometer with high g values
An accelerometer and piezoresistive technology, which is applied in the field of piezoresistive high-g value accelerometers, can solve the problems of high natural frequency and high sensitivity, and achieve the effect of high natural frequency, high sensitivity and good overload resistance
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2008-02-06
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to the technical field of micromechanical electronics, in particular to a piezoresistive high-g accelerometer. Background technique
[0002] Accelerometers are widely used in vibration and shock measurement in aerospace, electronics, automotive and mechanical fields. With the rise of the MEMS industry, accelerometers are gradually developing in the direction of miniaturization and integration. Because the micro accelerometer has the advantages of small size, light weight, low cost, low power consumption, and easy mass production, it has a wide range of military and civilian prospects. Among them, the piezoresistive accelerometer is widely used in the acceleration measurement of the shock environment because of its good linearity, simple peripheral circuit, and strong anti-overload ability. Based on the measurement requirements of different shock environments, high-g accelerometers among piezoresistive accelerometers have receive...
Examples
Embodiment Construction
[0017] The piezoresistive high-g value accelerometer includes a silicon-based frame 1 fixed on a glass bottom plate 6, an elastic beam 2, and a mass block 3 suspended in the center of the silicon-based frame 1 through 2 elastic beams. There is a piezoresistor 4 forming a Wheatstone bridge, the beam width of the elastic beam 2 is equal to the width of the mass block 3, and the beam thickness of the elastic beam 2 is smaller than the thickness of the mass block 3, and the back of the mass block 3 has a groove 5 .
[0018] During specific implementation, piezoresistors 4 are respectively diffused at both ends of the elastic beam 2 (that is, piezoresistors 4 are arranged at the intersections of the elastic beam 2, the mass block 3, and the silicon-based frame body 1, and there are co-diffused piezoresistors on the four elastic beams. Eight piezoresistors), the piezoresistors 4 at both ends of the elastic beam 2 form two Wheatstone bridges connected in series respectively, as shown...